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11.
We study experimentally and theoretically two polarization effects in a vertical cavity surface emitting laser submitted to optical feedback. In a first experiment, we obtain flips between two linearly polarized laser modes up to a frequency of 50 MHz using an external cavity with a polarizer. In a second experiment, polarization self modulation is demonstrated up to a frequency of 2.6 GHz, using a quarter wave plate instead. Numerical calculations, based on a four levels model for the active medium, show a good agreement with the experiments.  相似文献   
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Theoretical treatments forecast that bistable CMOS devices using electronic charge as a state variable will operate at their maximum thermal dissipation limit possibly as early as 2012. The problem is further compounded by increasing manufacturing challenges associated with the ever decreasing logic switch dimensions. These challenges require the development of new fabrication strategies that replace or complement current top-down lithography with bottom-up protocols using controlled self-assembly of nanomaterial building blocks. To answer some of these issues, this paper focuses on a new device paradigm consisting of an arene-metal-arene conformational switch, addressable through capacitive, inductive, or resonant-tunneling field coupling. The operating principle is based on voltage-tunable modulation in quantum electron transmission. The switch is open (off) when the metal ion is displaced to a position at a C-H bond on the arene ring due to an externally applied bias. Conversely, when the external bias is removed, the metal ion moves to an axis- symmetric position on the arene ring, and the switch is closed (on). The paper presents a summary of the architecture, operating principle, and advantages of the conformational switch, along with associated findings from proof-of-concept theoretical and experimental studies of its target specifications and performance. The paper also discusses opportunities and challenges related to the integration of conformational switches into hybrid CMOS-molecular and monolithic (all molecular) circuits.  相似文献   
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A predictive analogy of turbulent mass transfer across wavy, sheared air-water interface, in deep water bodies is proposed. The theory is based on the formulation of a theoretical eddy diffusivity profile in the surface region, and it applies to the non-breaking wave regime. The predictions for a water-side friction velocity range of 0.5–6 cm/s are in excellent agreement with laboratory data from wind-wave facilities with an average error of 15.4%.  相似文献   
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The authors' propose manual voting systems that have significant security advantages over existing systems, yet retain the simplicity and familiarity that has led to widespread acceptance. The authors also discuss ways to improve efficiency without endangering this public trust  相似文献   
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The authors investigated relationships between marijuana and inhalant use and several cultural and demographic factors in Anglo American and Hispanic American adolescents (N=1,094). Outcome measures assessed lifetime and 30-day marijuana and inhalant use. Predictors and covariates used in logistic regression analyses were region, grade, gender, knowledge, acculturation, familism, and parental monitoring. Hispanic Americans exhibited higher usage across all measures. In this group, high acculturation was associated with low marijuana, but high inhalant, use. Across all participants, positive family relations and parental monitoring were strongly associated with attenuated marijuana use hut only among those most knowledgeable about drugs. Familism and monitoring were not associated with diminished usage among the less knowledgeable. For inhalants, monitoring combined with high knowledge or high familism was associated with diminished usage. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
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The defect engineering in metalorganic vapor phase epitaxy InxGa1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGa1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of InxGa1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In0.53Ga0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.  相似文献   
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Transport properties of 1,1-difluoroethane (R152a)   总被引:2,自引:0,他引:2  
Based on reliable. carefully selected data sets. equations for the thermal conductivity and the viscosity of the refrigerant R 112a are presented. They are valid at temperatures from 240 to 440 K, pressures up to 20 MPa. and densities up to 1050 kg · m–3. including the critical region.  相似文献   
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