(1<Emphasis Type="Italic">S</Emphasis>,3<Emphasis Type="Italic">R</Emphasis>)-<Emphasis Type="Italic">cis</Emphasis>-Chrysanthemyl Tiglate: Sex Pheromone of the Striped Mealybug, <Emphasis Type="Italic">Ferrisia virgata</Emphasis>

Derivatives of 2,2-dimethyl-3-(2-methylprop-1-enyl)cyclopropanecarboxylic acid (chrysanthemic acid) are classic natural pyrethroids discovered in pyrethrum plants and show insecticidal activity. Chrysanthemic acid, with two asymmetric carbons, has four possible stereoisomers, and most natural pyrethroids have the (1R,3R)-trans configuration. Interestingly, chrysanthemic acid–related structures are also found in insect sex pheromones; carboxylic esters of (1R,3R)-trans-(2,2-dimethyl-3-(2-methylprop-1-enyl)cyclopropyl)methanol (chrysanthemyl alcohol) have been reported from two mealybug species. In the present study, another ester of chrysanthemyl alcohol was discovered from the striped mealybug, Ferrisia virgata (Cockerell), as its pheromone. By means of gas chromatography–mass spectrometry, nuclear magnetic resonance spectrometry, and high-performance liquid chromatography analyses using a chiral stationary phase column and authentic standards, the pheromone was identified as (1S,3R)-(?)-cis-chrysanthemyl tiglate. The (1S,3R)-enantiomer strongly attracted adult males in a greenhouse trapping bioassay, whereas the other enantiomers showed only weak activity. The cis configuration of the chrysanthemic acid–related structure appears to be relatively scarce in nature, and this is the first example reported from arthropods.     

Impact of electron and hole inversion-layer capacitance on lowvoltage operation of scaled n- and p-MOSFET's

The influence of inversion-layer capacitance (C_inv) on supply voltage (V_dd) of n- and p-MOSFET's is quantitatively examined. The physical origin of the effect of C_inv on V_dd consists in the band bending of a Si substrate in the inversion condition due to C_inv, which is not scaled with a reduction in gate oxide thickness. The amount and the impact of the band bending is accurately evaluated on a basis of one dimensional (1-D) self-consistent calculations including two-dimensional (2-D) subband structure of inversion-layer electrons and holes. It is demonstrated that additional band bending of a Si substrate due to C_inv becomes a dominant factor to limit the lowering of V_dd for CMOS with ultrathin gate oxides. The operation at V_dd lower than 0.6 V is quite difficult even with effective T_ox less than 1 nm     

Suppression of stress-induced leakage current after Fowler-Nordheimstressing by deuterium pyrogenic oxidation and deuterated poly-Sideposition

Reports on the effect of deuterium incorporation into gate oxide on stress-induced leakage current (SILC) under Fowler-Nordheim (F-N) electron injection. Deuterium atoms were introduced during the growth of the gate oxide by deuterium pyrogenic oxidation. A deuterated poly-Si film was also utilized as a gate electrode. The deuterated poly-Si gate electrode was deposited by deuterated monosilane (SiD₄) gas, as a substitute for hydrogenated monosilane (SiH₄) gas. The properties of the deuterated oxide were compared with those of deuterium-annealed oxide, i.e., the conventional method for deuterium incorporation into gate oxide. As a result, it was found that SILC after both polarities of F-N stressing was clearly suppressed by the use of both the deuterium pyrogenic oxide and the deuterated poly-Si gate. Experimental results for the depth profiles and thermal desorption characteristics of introduced-deuterium atoms, compared with the case of the deuterium annealing, indicated that both the deuterium incorporation not only into the Si/SiO₂ interface but also into bulk-SiO ₂ and the more stable chemical bonding of deuterium atoms are realized by deuterium pyrogenic oxidation     

Nonvolatile Si quantum memory with self-aligned doubly-stacked dots

We propose a novel Si dot memory whose floating gate consists of self-aligned doubly stacked Si dots. A lower Si dot exists immediately below an upper dot and lies between thin tunnel oxides. It is experimentally shown that charge retention is improved compared to the usual single-layer Si dot memory. A theoretical model considering quantum confinement and Coulomb blockade in the lower Si dot explains the experimental results consistently, and shows that charge retention is improved exponentially by lower dot size scaling. It is shown that the retention improvement by lower dot scaling is possible, keeping the same write/erase speed as single dot memory, when the tunnel oxide thickness is adjusted simultaneously.     

Whiteness perception under different types of fluorescent lamps

The effects of correlated color temperature and the chromaticity of light sources on the perception of surface whiteness were investigated. For the experiment, a Munsell N9.25 chip and 11 nearly white chips (V = 9.25, Munsell chroma ≦ 1.0) were selected. The interval scale of the whiteness of these chips was determined from the results of pair comparisons under eight different fluorescent lamps with correlated color temperatures from 2800 to 6700 K. The Munsell 3PB, 10PB, 7P, and N chips gained high scores under 6700 K illumination, whereas the 3PB, 5B, 7BG, and 9G chips scored higher under the 2800 K illumination. The 12 chips were divided into two groups. In one group, the interval scale from the bottom was found to increase as the correlated color temperature increased, whereas in the other group, it decreased with the temperature. The Munsell 3PB/9.25/1.0 chips fell into the latter group but consistently exhibited the highest or at least high‐order scores for all the illuminations examined. In those cases in which the correlated color temperature was held constant, the chromaticity of the light source was found to have no significant effect on the whiteness interval scale. A high correlation was identified between the interval scale of the whiteness and the two metrics, the metric chroma of CIELAB, and CIECAM97s chroma C. © 2003 Wiley Periodicals, Inc. Col Res Appl, 28, 96–102, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/col.10129     

Inverter performance of 0.10 μm CMOS operating at roomtemperature

The switching performance of 0.10 μm CMOS devices operating at room temperature has been discussed on the basis of both experimental and simulated results. The measured propagation delay time of a 0.10 μm gate length CMOS has been quantitatively divided into intrinsic and parasitic components for the first time. The results have shown that the drain junction capacitance strongly affects the propagation delay time in the present 0.10 μm CMOS. The switching performance of a 0.10 μm ground rule CMOS has been simulated by using device parameters extracted from the experimental results. In the 0.10 μm ground rule CMOS, it has been shown that an increase of the contact resistance will degrade the propagation delay time, which is one of the most essential problems in further device miniaturization. It has been also demonstrated that even if the specific contact resistance ρ_c is reduced to be less than 1×10^-7 Ω cm, further reduction of the gate overlap capacitance C_ov will be required to achieve the propagation delay time to be less than 10 ps in the 0.10 μm ground rule CMOS at room temperature     

Back gate effects on threshold voltage sensitivity to SOI thicknessin fully-depleted SOI MOSFETs

The dependence of threshold voltage on silicon-on-insulator (SOI) thickness is studied on fully-depleted SOI MOSFETs, and, for this purpose, back-gate oxide thickness and back gate voltage are varied. When the back gate oxide is thinner than the critical thickness dependent on the back gate voltage, the threshold voltage has a minimum in cases where the SOI film thickness is decreased, because of capacitive coupling between the SOI layer and the back gate. This fact suggests that threshold voltage fluctuations due to SOI thickness variations are reduced by controlling the back gate voltage and thinning the back gate oxide     

Cytotoxic effect of conjugated trienoic fatty acids on mouse tumor and human monocytic leukemia cells

The cytotoxicity of fatty acids from seed oils containing conjugated linolenic acids (CLN) was studied. Fatty acids from pomegranate, tung, and catalpa were cytotoxic to human monocytic leukemia cells at concentrations exceeding 5 μM for pomegranate and tung and 10 μM for catalpa, but fatty acids from pot marigold oil had no effect at concentrations ranging up to 163 μM. The main conjugated fatty acids of pomegranate, tung, catalpa, and pot marigold were cis(c)9, trans(t)11, c13-CLN (71.7%), c9,t11,t13-CLN (70.1%), t9,t11,c13-CLN (31.3%), and t8,t10,c12-CLN (33.4%), respectively. Therefore, the cytotoxicities of fatty acids from pomegranate, tung, and catalpa were supposed to be due to 9,11,13-CLN isomers. To elucidate the cytotoxicity of these CLN, we separated each CLN isomer from the fatty acid mixtures by high-performance liquid chromatography and analyzed its cytotoxicity. The cytotoxicities of c9,t11,c13-CLN, c9,t11,t13-CLN, and t9,t11,c13-CLN were much stronger than that of t8,t10,c12-CLN. Therefore, the higher cytotoxicity of fatty acids from pomegranate, tung, and catalpa than those from pot marigold would be derived from the different activities of 9,11,13-CLN and 8,10,12-CLN. Since there was little difference in the cytotoxicities of c9,t11,c13-CLN, c9,t11,t13-CLN, and t9,t11,c13-CLN, it is suggested that the cis/trans configuration of 9,11,13-CLN isomers had little effect on their cytotoxic effects. The mechanism of the cytotoxicity of the four fatty acids above may involve lipid peroxidation, because the order of toxicity of the fatty acids was consistent with their susceptibility to peroxidation in aqueous phase. This was supported by the decrease in the cytotoxicity of the fatty acids by addition of butylated hydroxytoluene.     

Enantioseparation of beta-blockers labelled with a chiral fluorescent reagent, R (-)-DBD-PyNCS, by reversed-phase liquid chromatography

A fluorescent chiral tagging reagent, 4-(3-isothiocyanatopyrrolidin-1-yl)-7-(N,N-dimethylaminosulfony l)-2,1, 3-benzoxadiazole [R(-)-DBD-PyNCS], has been used for the liquid chromatographic resolution of racemic pairs of beta-blockers. The reagents reacts with beta-blockers at 65 degrees C for 90 min in aqueous acetonitrile containing 0.05% triethylamine to produce the corresponding pair of diastereomers. No racemization occurs during the tagging reaction under these conditions. From results of the time-course study of oxprenolol the reactivities of the enantiomers of beta-blockers with R(-)-DBD-PyNCS are comparable. The optimum excitation and emission wavelengths of the resulting derivatives were ca. 460 and 550 nm, respectively. The derivatives of beta-blockers were efficiently resolved by a reversed-phase column with water-acetonitrile containing 0.1% trifluoroacetic acid as the eluent. The resolution (Rs) values of the diastereomers derived from 10 beta-blockers were in the range of 1.54-4.80. The Rs value for timolol was 0.643. The detection limits (signal-to-noise ratio of 2) were one or two orders of magnitude lower with beta-blockers having the iso-propylamino structure (15-300 fmol) than with those having the tert-butylamino structure (1.25-8.00 pmol). The proposed procedure was applied to the determination of R(+)- and S(-)-propranolol in rat plasma and saliva after oral administration of R(+)-propranolol hydrochloride or S(-)-propranolol hydrochloride.