MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.     

Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by, combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t/sub p-CBL/), and a doping concentration (n/sub p-CBL/) of the p-GaAs current-blocking layer (CBL) were determined to be W=1.2 /spl mu/m, t/sub p-CBL/=2 /spl mu/m, and n/sub p-CBL/=1/spl times/10/sup 18/ cm/sup -3/. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.     

一种基于多传感器的红外图像正则化超分辨率算法

提出一种红外图像多传感器超分辨率重建算法。 算法存在两个关键点:一是有效利用两类图像的相关性;二是针对红外图像的特点利用其自 身信息 构造正则化模型。采用相位一致性算法提取可见光图像边缘,利用此边缘信息对正则化模型 加权,以 充分利用可见光和红外图像的相关性;将一阶梯度锐化算子引入总广义变分模型,构成针对 红外 图像特点的正则化模型;最后采用一阶主-对偶优化算法求得加权后模型的最优解。实验表 明,本文算法可获得边缘清晰的重建结果,并且有效抑制噪声,在主观视觉效果和客观评价 指标方面均优于其他算法。     

InGaN microring light-emitting diodes

The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.     

Numerical analysis of the warpage problem in TSOP

The reliability and the solderability of thin small outline package (TSOP) are significantly affected by the warpage that is generated after epoxy molding compound (EMC) molding process. This warpage problem mainly results from the mismatch of material properties such as Young's modulus, Poisson's ratio and coefficient of thermal expansion (CTE) and the geometric structure of each component for TSOP. The optimization of both material properties and geometric structures using the numerical analysis is necessary to reduce the warpage of TSOP. However, there are still some limitations for the numerical analysis to obtain proper results consistent with the practical warpage values. In this paper, the numerical analysis is performed under the assumption of elastic behavior for EMC. Furthermore, to solve the limitations, the material properties at the molding temperature and the degree of reaction rate at the end of the molding process of EMC are considered together for the analysis. This numerical analysis gives the higher warpage values than the measured ones, and is applicable to the practical design of the reliable electronic package.     

Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wirelasers with different current blocking configurations

GaAs-AlGaAs V-grooved inner stripe (VIS) quantum-well wire (QWW) lasers grown by metalorganic chemical vapor deposition with different current blocking configurations, n-blocking on p-substrate (VIPS), p-n-p-n blocking on n-substrate (VI(PN)_nS) and p-blocking on n-substrate (VINS) have been fabricated and characterized. The VIPS QWW lasers show the most stable characteristics with effective current confinement: one of the lasers shows fundamental transverse mode, lasing up to 5 mW/facet, typical threshold current of 39.9 mA at 818.5 mm, an external differential quantum efficiency of 24%/facet, and characteristic temperature of 92 K. The current tuning rate was almost linear at 0.031 mm/mA, and the temperature tuning rate was measured to be 0.14 nm/°C. Comparison of the light output versus current characteristics of the lasers with different current blocking configurations is presented here     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Training sequence design and channel estimation of OFDM-CDMA broadband wireless access networks with diversity techniques

In this paper, an OFDM-CDMA system employing various diversity schemes is considered for a possible candidate of broadband wireless access networks and broadcasting applications. With an emphasis on a preamble design for multi-channel separation, we address a channel estimation based on the time-domain windowing and its imperfectness in OFDM-based multiple-antenna transmission systems. By properly designing each preamble for multiple antennas to be orthogonal in the time domain, the channel estimation can be applied to the HIPERLAN/2 and IEEE 802.11a standards in the case of more than two transmit antennas. Also, the effect of diversity techniques on the performance of OFDM-CDMA based broadband wireless access networks is investigated and the maximum achievable diversity gain for a two-path Rayleigh fading environment is evaluated. Simulation results show that the OFDM-CDMA system applying a space-time-frequency diversity with a full-rate full diversity code can give the diversity of D=4 and D=8 for both multi-user cases of maximum user and half user capacities, respectively.