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161.
Lenin Dnepropetrovsk Pipe Plant. Translated from Metallurg, No. 8, p. 39, August, 1989.  相似文献   
162.
A continuous phase quadrature phase shift keyed (CPQPSK) modulation technique is presented. This method utilizes a conventional QPSK modulator and a phase trajectory converter to approximate M=4, h=1/4 continuous phase signal and allows low cost, low complexity, and high rate (>1 Gbit/s) CPM modem implementation for bandwidth efficient transmission through nonlinear satellite channels. Using a communications analysis computer program it has been found that CPQPSK has 99 percent out-of-band power of 0.8R (MSK has 99 percent out-of-band power of 1.2 R where R is defined as bit rate), continuous phase trajectories, and nearly constant envelope amplitude. Simulation of realistic hardware designs indicate that the CPQPSK will require an Eb/No of 14 dB to achieve a bit error rate (BER) of 10-6. Forward error correcting techniques using block codes with an overhead of 10 percent indicate that the Eb/No requirements can be reduced to 11.2 dB for 10-6 BER  相似文献   
163.
By using integral transform methods, an approach is developed to the solution of a problem on the temprature distribution in multilayer structures heated by cw scanning laser radiation, with phase transitions in the layers taken into account.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 6, pp. 1000–1010, December, 1987.  相似文献   
164.
The aim of this paper is the comparison of the axial flux (AF) structures versus the conventional radial flux (RF) structures for permanent-magnet synchronous motors. The comparison procedure is based on simple thermal considerations. Two motor typologies are chosen and compared in terms of delivered electromagnetic torque. The comparison is developed for different motor dimensions and the pole number influence is put into evidence. The paper reports the complete comparison procedure and the related results analysis. The obtained results show that, when the axial length is very short and the pole number is high, the AF motors can be an attractive alternative to the conventional RF solutions.  相似文献   
165.
Copolyesters containing poly(ethylene terephthalate) and poly(hexamethylene terephthalate) (PHT) were prepared by a melt condensation reaction. The copolymers were characterised by infrared spectroscopy and intrinsic viscosity measurements. The density of the copolyesters decreased with increasing percentage of PHT segments in the backbone. Glass transition temperatures (Tg). melting points (Tm) and crystallisation temperatures (Tc) were determined by differential scanning calorimetry. An increase in the percentage of PHT resulted in decrease in Tg, Tm and Tc. The as-prepared copolyesters were crystalline in nature and no exotherm indicative of cold crystallisation was observed. The relative thermal stability of the polymers was evaluated by dynamic thermogravimetry in a nitrogen atmosphere. An increase in percentage of PHT resulted in a decrease in initial decomposition temperature. The rate of crystallisation of the copolymers was studied by small angle light scattering. An increase in percentage of PHT resulted in an increase in the rate of crystallisation.  相似文献   
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Intense irradiation (25–40 A/cm2) at intermediate energy (400 keV) has been found to cause “metallisation” of tungsten oxide and titanium niobate crystal surfaces. The possible mechanisms and the likely consequences for high-resolution imaging of clean oxide surfaces are briefly discussed.  相似文献   
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This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm2) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices  相似文献   
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