Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

Low-power digital radio as a ubiquitous subscriber loop

The recent growth in the use of digital radio is reviewed. The technology used to implement low-power digital radio in the local exchange loop plant is discussed. The integration of digital radio subscriber loops withnetwork intelligence is explored. The relationship between low-power digital radio loops and broadband fiber loops is briefly examined, and standards and frequency allocation activities are summarized     

Extending the power line LAN up to the neighborhood transformer

This article reports on the performance of audio, video, multimedia, and other high-data-rate in-home networking applications. The article starts by describing the problems encountered in power line communication channels in terms of frequency response and noise characteristics, and explains how in-home power line LANs can be extended to the neighborhood transformer. OFDM physical layers providing speeds of 45 Mb/s and 200 Mb/s as well as QoS and security are introduced. Finally, the results of large tests involving several thousands of nodes are described.     

The origination and optimization of Si/SiO/sub 2/ interface roughness and its effect on CMOS performance

As CMOS device dimensions scale down to 100 nm and beyond, the interface roughness between Si and SiO/sub 2/ has become critical to device performance and reliability. Si/SiO/sub 2/ interface roughness degrades channel mobility decreasing drive currents. The authors have used atomic force microscopy to study surface roughness in the processing of 0.16 /spl mu/m CMOS integrated circuits. All of the process steps that could potentially affect the interface roughness have been studied. The results show that oxidation is the major contributor to the interface roughness. The rms roughness is found to be linearly dependent on oxide thickness. Transistors with Si/SiO/sub 2/ interface rms roughness that has been reduced from 1.6 to 1.1 /spl Aring/ by reducing oxide thicknesses show improved device drive currents. This technique for interfacial smoothing and device performance improvement has the advantage of being easily implemented in today's technology.     

Electrical qualification of new ultrathin integration techniques

The aim of this paper is to analyze the feasibility of ultrathin packages through the electrical qualification of the technological process used, i.e. mechanical lapping. It considers polysilicon bipolar transistors which thickness can reach values lower than 10 μm. Forward mode and reverse mode characterizations show no significant degradation of pertinent characteristics, thus allowing to find applications in new compact packaging concept.     

Uniform Polarization Scattering With Fiber-Coil-Based Polarization Controllers

A detailed study of fiber-coil-based polarization controllers (PCs) is performed. First, a method to deterministically calculate the PC configuration in order to transform between any two states of polarization is presented. In a second stage, the case in which the configuration angles are randomly changed is studied. The cases of a single PC and of the system obtained with the concatenation of several PCs are analyzed. For both cases, a general expression for the variance of the Stokes parameters is obtained. Using this expression, it is demonstrated that it is possible to achieve uniform polarization scattering using a concatenation of fiber-coil-based PCs. Finally, it is shown that fiber-coil-based PCs can be used to emulate both first- and second-order polarization-mode dispersions     

A comparative study of the durability and behaviour of fat lime and feebly-hydraulic lime mortars

Lime mortars are often used for repairs to historic buildings. This paper investigates two forms of lime binder: fat and feebly-hydraulic, in order to predict their long-term behaviours and hence ascertain which of the two possesses greater durability, so that they may be used more efficiently in restoration. Mortars were tested for properties governing moisture movement and also subject to durability cycles. The resistance to damage under freezing conditions was evaluated with the saturation coefficient. Thermal cycles had no effect on the mortars and gave no indication of the relative durabilities of the binders. Salt crystallization cycles, though effective in distinguishing the more durable of the two, were too aggressive to gauge a clear profile of salt weathering and succeeded in rapidly decomposing the samples. Tests on the properties governing moisture movement produced good indications of the degree to which the mortars permit flow through their fabrics. According to the results obtained, fat lime mortars are more durable than those made with feebly-hydraulic lime. The results also suggest that the feebly-hydraulic lime mortars are at a higher risk of decomposition by granular disintegration whereas fat lime mortars are better suited to damp, slightly exposed conditions. These results disagree with the general opinion that hydraulic limes are more durable than fat limes due to the additional strength and water insolubility arising from their hydraulicity.     

Laser stimulated low-temperature crystallization of amorphous silicon

Laser annealing of amorphous silicon (a-Si) at different initial temperatures (77 and 300 K) has been studied. It is established that the laser-stimulated crystallization of silicon is possible at relatively low temperatures. A theoretical model is proposed, which explains this phenomenon by melting via the electron mechanism followed by recrystallization.