Mie‐Resonant Membrane Huygens' Metasurfaces

All‐dielectric metasurfaces have become a new paradigm for flat optics as they allow flexible engineering of the electromagnetic space of propagating waves. Such metasurfaces are usually composed of individual subwavelength elements embedded into a host medium or placed on a substrate, which often diminishes the quality of the resonances. The substrate imposes limitations on the metasurface functionalities, especially for infrared and terahertz frequencies. Here a novel concept of membrane Huygens' metasurfaces is introduced. The metasurfaces feature an inverted design, and they consist of arrays of holes made in a thin membrane of high‐index dielectric material, with the response governed by the electric and magnetic Mie resonances excited within dielectric domains of the membrane. Highly efficient transmission combined with the 2π phase coverage in the freestanding membranes is demonstrated. Several functional metadevices for wavefront control are designed, including beam deflector, a lens, and an axicon. Such membrane metasurfaces provide novel opportunities for efficient large‐area metadevices, whose advanced functionality is defined by structuring rather than by chemical composition.     

Investigation of Eccentric Open Eye Formation in a Slab Caster Tundish

Metallurgical and Materials Transactions B - Inert gas shrouding in tundish can result in the formation of a tundish open eye (TOE) due to the presence of reversed flows on the upper surface of the...     

Mobility activation in thermally deposited CdSe thin films

Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the energy of incident illumination, which results in the existence of two distinct trap levels. In each trap depth the energy of the trap increases linearly. It infers that there is a linear distribution of traps of different energies below the conduction band.     

Dielectric and Thermal Investigations on PbNb2O6 in Pure Piezoelectric Phase and Pure Non-Piezoelectric Phase

A high piezoelectric transition temperature is indicated for present orthorhombic samples of lead meta-niobate (PbNb₂O₆) by the high value of the temperature (T_m) at which the real part (?′) of electrical permittivity peaks. It is 573 to 580°C. The imaginary component (?″) increases sharply at these temperatures. Cooling run after heating to 700°C gives changed values of ?′ and ?″ and T_m. Present work reports impedance spectroscopy (up to 700°C over 20 Hz to 5.5 MHz) and Differential Scanning Calorimetry or DSC on the pure orthorhombic phase, and, for the first time, on the pure rhombohedral phase. DSC shows an endothermic dip across T_m during heating and an exothermic peak during cooling for the orthorhombic sample only.     

Solving conflicting bi-objective facility location problem by NSGA II evolutionary algorithm

This paper focuses on the facility location problem with two conflicting objectives. We observe that minimization of the total cost of a particular echelon may lead to the increase in the total cost of a supply chain as a whole. Thus, these conflicting objectives are required to be met together from a supply chain perspective. We have solved the problem formulated in mixed nonlinear programming by a multi-objective evolutionary algorithm (MOEA) known as non-dominated sorting algorithm, or NSGA II in short. Numerical example is provided to show the effect of the algorithm on the solution.     

Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics

The breakdown phenomena in SiO/sub x/N/sub y/ (EOT=20 /spl Aring/) gate dielectric under a two- stage constant voltage stress in inversion mode are physically analyzed with the aid of transmission electron microscopy. The results show that dielectric-breakdown-induced epitaxy (DBIE) remains as one of the major failure defects responsible for gate dielectric breakdown evolution even for a stress voltage as low as 2.5 V. Based on the results, the same failure mechanism i.e., presence of DBIE would be responsible for the degradation in ultrathin gate dielectrics for gate voltage below 2.5 V. It is believed that DBIE will be present in MOSFETs failed at nominal operating voltage.     

Large-Eddy Simulation of High Reynolds Number Turbulent Flow Past a Square Cylinder

Flow past a square cylinder at a Reynolds number of 21,400 has been studied numerically using the large-eddy simulation technique. A dynamic subgrid-scale stress model has been used for the small scales of turbulence. The time- and span-averaged axial and transverse velocities in the downstream of the cylinder are in good agreement with the experimental results. The distribution of turbulent normal and shear stresses is also well predicted. The coherent and incoherent components of turbulent fluctuations at some specified phases have been separated and their relative magnitudes downstream of the cylinder have been compared. The comparison shows more coherence in the near wake than the far wake, while the coherent and incoherent components are of comparable magnitude in the far wake. The far wake shows irregular phase-averaged structures.     

Small torsional vibration superposed on finitely deformed state of a circular cylindrical rod of transversely isotropic elastic material

Starting with a class of small deformations superposed on a finitely deformed state of a transversely isotropic elastic solid, we study a problem of small torsional vibration superposed on homogeneous finitely deformed state of a circular cylindrical rod made of transversely isotropic elastic material. It has been found that free vibration is possible and, due to anisotropy, the speed of propagation of waves of torsion along the cylinder is increased or decreased according as the initial stressed state is under tension or compression.