A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Bandwidth enhancement of dielectric resonator antenna by loading alow-profile dielectric disk of very high permittivity

The aperture-coupled cylindrical dielectric resonator (DR) antenna loaded by a low-profile DR disk of very high permittivity is studied experimentally. By using the low-profile parasitic DR disk the antenna bandwidth can be increased from 8% bandwidth to 25%. The characteristics of the new configuration are measured and discussed     

Algorithm for mapping between information bits and channel symbolsin MTCM codes

An algorithm for mapping between information bits and channel symbols in multiple trellis-coded modulation (MTCM) codes with M-PSK signal sets is proposed. The core of the algorithm assigns information bits with a Hamming distance in proportion to the sum of the Euclidean distance to each M-PSK symbol. The analytical results show that the additional gains from applying the algorithm can be achieved with little or no loss     

Driving voltage reduction in a two-phase CCD by suppression ofpotential pockets in inter-electrode gaps

This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed     

Device design with automatic simulation system for basic CCDcharacteristics

A simulation system has been developed to automatically analyze basic electrical characteristics of a charge-coupled device (CCD) image sensor from a process simulation result. This system shortened the simulation period to approximately 1/10 by getting rid of complicated repetitious procedures. A high-performance new cell technology has been developed successfully with improving impurity distribution in shorter development time by using this system. This technology has been realized as a CCD cell pixel with CCD charge quantity of 1.8 times, effective transfer efficiency of over 99%, no image lag for driving read-out pulse voltage in comparison with conventional technology. A 1/4-in 330 K square pixel progressive-scan CCD was fabricated with this technology. These results are described to demonstrate the effectiveness of the automatic simulation system     

Slot antennas on photonic band gap crystals

The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna     

Analysis of availability improvement in LMSS by means of satellitediversity based on three-state propagation channel model

Aiming at future multimedia land mobile-satellite services (LMSS) consisting of a large number of nongeostationary Earth-orbit satellites, we present an LMSS propagation channel model for assessing the effect of a satellite diversity scheme so that high service availability and high signal quality are assured. We classify general fading environments for LMSS into three states. By taking the occurrence probability of each state into account, a new fading channel model is developed. The validity of the model is identified by comparing its predicted values in terms of the cumulative distribution function (CDF) with measured data available so far. Then, based on this model, we calculate the satellite diversity effect assuming that the area is illuminated simultaneously by at least two satellites moving in low Earth orbits (LEO) over urban and suburban environments. In addition, state transition characteristics based on a Markov model are presented     

Redundancy optimization of static series-parallel reliabilitymodels under uncertainty

This paper extends the classical model of Ushakov on redundancy optimization of series-parallel static coherent reliability systems with uncertainty in system parameters. Their objective function represents the total capacity of a series-parallel static system, while the decision parameters are the nominal capacity and the availability of the elements. They obtain explicit expressions (both analytic and via efficient simulation) for the constraint of the program, viz, for the Cdf of the system total capacity and then show that the extended program is convex mixed-integer. Depending on whether the objective function and the associated constraints are analytically available or not, they suggest using deterministic and stochastic (simulation) optimization approaches, respectively. The last case is associated with likelihood ratios (change of probability measure). A genetic algorithm for finding the optimal redundancy is developed and supporting numerical results are presented     

Photoresponse Properties of CdSe Single‐Nanoribbon Photodetectors

Photodetectors are fabricated from individual single‐crystal CdSe nanoribbons, and the photoresponse properties of the devices are studied systematically. The photodetector shows a high sensitivity towards excitation wavelength with a sharp cut‐off at 710 nm, corresponding to the bandgap of CdSe. The device exhibits a high photo‐to‐dark current ratio of five orders of magnitude at 650 nm, and can function with excellent stability, reproducibility, and high response speed (< 1 ms) in a wide range of switching frequency (up to 300 Hz). The photocurrent of the device shows a power‐law dependence on light intensity. This finding together with the analysis of the light intensity‐dependent response speed reveals the existence of various traps at different energy levels (shallow and deep) in the bandgap. Coating with a thin SiO₂ isolating layer increases the photocurrent but decreases the response speed of the CdSe nanoribbon, which is attributed to reduction of recombination centers on ribbon surface.     

Highly Efficient Orange and Green Solid‐State Light‐Emitting Electrochemical Cells Based on Cationic IrIII Complexes with Enhanced Steric Hindrance

Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂ sb]PF₆ in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W^–1) at 2.5 V, and 7.1 % and 26.2 lm W^–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells.