Molecular Heterojunctions of Oligo(phenylene ethynylene)s with Linear to Cruciform Framework

Electrical transport properties of molecular junctions are fundamentally affected by the energy alignment between molecular frontier orbitals (highest occupied molecular orbital (HOMO) or lowest unoccupied molecular orbital (LUMO)) and Fermi level (or work function) of electrode metals. Dithiafulvene (DTF) is used as substituent group to the oligo(phenylene ethynylene) (OPE) molecular wires and different molecular structures based on OPE3 backbone (with linear to cruciform framework) are achieved, with viable molecular orbitals and HOMO–LUMO energy gaps. OPE3, OPE3–DTF, and OPE3–tetrathiafulvalene (TTF) can form good self‐assembled monolayers (SAMs) on Au substrates. Molecular heterojunctions based on these SAMs are investigated using conducting probe–atomic force microscopy with different tips (Ag, Au, and Pt) and Fermi levels. The calibrated conductance values follow the sequence OPE3–TTF > OPE3–DTF > OPE3 irrespective of the tip metal. Rectification properties (or diode behavior) are observed in case of the Ag tip for which the work function is furthest from the HOMO levels of the OPE3s. Quantum chemical calculations of the transmission qualitatively agree with the experimental data and reproduce the substituent effect of DTF. Zero‐bias conductance, and symmetric or asymmetric couplings to the electrodes are investigated. The results indicate that improved fidelity of molecular transport measurements may be achieved by systematic studies of homologues series of molecular wires applying several different metal electrodes.     

iMobile EE – An Enterprise Mobile Service Platform

iMobile is an enterprise mobile service platform that allows resource-limited mobile devices to communicate with each other and to securely access corporate contents and services. The original iMobile architecture consists of devlets that provide protocol interfaces to different mobile devices and infolets that access and transcode information based on device profiles. iMobile Enterprise Edition (iMobile EE) is a redesign of the original iMobile architecture to address the security, scalability, and availability requirements of a large enterprise such as AT&T. iMobile EE incorporates gateways that interact with corporate authentication services, replicated iMobile servers with backend connections to corporate services, a reliable message queue that connects iMobile gateways and servers, and a comprehensive service profile database that governs operations of the mobile service platform. The iMobile EE architecture was also extended to provide personalized multimedia services, allowing mobile users to remotely control, record, and request video contents. iMobile EE aims to provide a scalable, secure, and modular software platform that makes enterprise services easily accessible to a growing list of mobile devices roaming among various wireless networks.     

Role of PbSe Structural Stabilization in Photovoltaic Cells

Semiconductor nanocrystals are promising materials for printed optoelectronic devices, but their high surface areas are susceptible to forming defects that hinder charge carrier transport. Furthermore, correlation of chalcogenide nanocrystal (NC) material properties with solar cell operation is not straightforward due to the disorder often induced into NC films during processing. Here, an improvement in long‐range ordering of PbSe NCs symmetry that results from halide surface passivation is described, and the effects on chemical, optical, and photovoltaic device properties are investigated. Notably, this passivation method leads to a nanometer‐scale rearrangement of PbSe NCs during ligand exchange, improving the long‐range ordering of nanocrystal symmetry entirely with inorganic surface chemistry. Solar cells constructed with a variety of architectures show varying improvement and suggest that triplet formation and ionization, rather than carrier transport, is the limiting factor in singlet fission solar cells. Compared to existing protocols, our synthesis leads to PbSe nanocrystals with surface‐bound chloride ions, reduced sub‐bandgap absorption and robust materials and devices that retain performance characteristics many hours longer than their unpassivated counterparts.     

Visibility of wavelet quantization noise

The discrete wavelet transform (DWT) decomposes an image into bands that vary in spatial frequency and orientation. It is widely used for image compression, measures of the visibility of DWT quantization errors are required to achieve optimal compression. Uniform quantization of a single band of coefficients results in an artifact that we call DWT uniform quantization noise; it is the sum of a lattice of random amplitude basis functions of the corresponding DWT synthesis filter. We measured visual detection thresholds for samples of DWT uniform quantization noise in Y, Cb, and Cr color channels. The spatial frequency of a wavelet is r2^-λ, where r is the display visual resolution in pixels/degree, and λ is the wavelet level. Thresholds increase rapidly with wavelet spatial frequency. Thresholds also increase from Y to Cr to Cb, and with orientation from lowpass to horizontal/vertical to diagonal. We construct a mathematical model for DWT noise detection thresholds that is a function of level, orientation, and display visual resolution. This allows calculation of a “perceptually lossless” quantization matrix for which all errors are in theory below the visual threshold. The model may also be used as the basis for adaptive quantization schemes     

Highly stable optical add/drop multiplexer using polarization beam splitters and fiber Bragg gratings

We demonstrate a novel wavelength-division add/drop multiplexer employing fiber Bragg gratings and polarization beam splitters. The multiplexer is easy to fabricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5-Gb/s-per-channel wavelength-division multiplexing (WDM) transmission system.     

Threshold voltage and C-V characteristics of SOIMOSFET's related to Si film thickness variation on SIMOX wafers

C-V characteristics of fully depleted SOI MOSFETs have been studied using a technique for measuring silicon-film thickness using a MOSFET. The technique is based on C-V measurements between the gate and source/drain at two different back-gate voltages, and only a large-area transistor is required. Using this technique, SOI film thickness mapping was made on a finished SIMOX wafer and a thickness variation of ±150 Å was found. This thickness variation causes as much as a 100-mV variation in the device threshold voltage. The silicon-film thickness variation and threshold-voltage variation across a wafer shows a linear correlation dependence for a fully depleted device. C-V measurements of the back-gate device yield the buried-oxide thickness and parasitic capacitances. The effects of GIDL (gate-induced drain leakage) current on C-V characteristics are also discussed     

Modeling and simulation of 2D lithium‐ion solid state battery

The goal of the work presented here was to develop a simulation approach for studying the effects of materials and geometry on the performance of Li‐ion Solid State Batteries (SSB). Simulation provides the opportunity to explore, with ease, different material properties and cell geometries to optimize a Li‐ion SSB's performance. Simulations shown in this paper are time‐dependent and consider electrochemical reaction, heat transfer, the diffusion of Li‐ions and electrons in the electrolyte, and solid Li diffusion in the positive electrode. A 2D model was simulated and the results shown. The simulations were able to show discharge curves, heat flux, the concentration of Li‐ions, electrons, and solid Li at any time in the discharge cycle. Copyright © 2015 John Wiley & Sons, Ltd.