An Intelligent Product Recommendation Model to Reflect the Recent Purchasing Patterns of Customers

Mobile Networks and Applications - This study suggests a new product recommendation model to reflect the recent purchasing patterns of customers. There are many methods to measure the similarity...     

Banyan multipath self-routing ATM switches with shared buffer typeswitch elements

The asynchronous transfer mode (ATM) has been selected as the multiplexing and switching technique for use in the public broadband ISDN (B-ISDN). We propose a large-scale ATM switch architecture in which a banyan multipath self-routing network is combined advantageously with a shared buffer type switch element. The proposed banyan space-division concept yields a simple architecture having the potential to accommodate easily the growth of switch size. Since the interconnection network between switch modules or between switch elements has a twofold banyan architecture, expansion in crosspoints or interconnections with the increase of switch size can be lessened. The multipath self-routing concept makes the switch performance better and leads to an efficient realization of a switch element on a single chip as the fundamental building block of a large-size switch. We analyze the required capacity for queuing buffers in the switching network. The multipath approach inevitably creates information sequence disturbances. Therefore, we also analyze the out-of-sequence phenomenon of a banyan multipath switching system. To satisfy the sequence integrity requirement for ATM, a simple approach is proposed for the multipath switch by using a spacing controller. In addition, we quantify the improvement of out-of-sequence performance under the spacing controller scheme     

Delocalized Electron Accumulation at Nanorod Tips: Origin of Efficient H2 Generation

Photocatalytic hydrogen (H₂) evolution requires efficient electron transfer to catalytically active sites in competition with charge recombination. Thus, controlling charge‐carrier dynamics in the photocatalytic H₂ evolution process is essential for optimized photocatalyst nanostructures. Here, the efficient delocalization of electrons is demonstrated in a heterostructure consisting of optimized MoS₂ tips and CdS nanorods (M‐t‐CdS Nrs) synthesized by amine‐assisted oriented attachment. The heterostructure achieves photocatalytic H₂ activity of 8.44 mmol h^?1 g^?1 with excellent long‐term durability (>23 h) without additional passivation under simulated solar light (AM 1.5, 100 mW cm^?2). This activity is nearly two orders of magnitude higher than that of pure CdS Nrs. The impressive photocatalytic H₂ activity of M‐t‐CdS Nrs reflects favorable charge‐carrier dynamics, as determined by steady‐state PL and time‐correlated single photon counting correlation analysis at low temperature. The MoS₂ cocatalysts precisely located at the end of the CdS Nrs exhibit ultrafast charge transfer and slow charge recombination via spatially localized deeper energy states, resulting in a highly efficient H₂ evolution reaction in lactic acid containing an electrolyte.     

Effective Polysulfide Rejection by Dipole‐Aligned BaTiO3 Coated Separator in Lithium–Sulfur Batteries

Although the exceptional theoretical specific capacity (1672 mAh g^?1) of elemental sulfur makes lithium–sulfur (Li–S) batteries attractive for upcoming rechargeable battery applications (e.g., electrical vehicles, drones, unmanned aerial vehicles, etc.), insufficient cycle lives of Li–S cells leave a substantial gap before their wide penetration into commercial markets. Among the key features that affect the cyclability, the shuttling process involving polysulfides (PS) dissolution is most fatal. In an effort to suppress this chronic PS shuttling, herein, a separator coated with poled BaTiO₃ or BTO particles is introduced. Permanent dipoles that are formed in the BTO particles upon the application of an electric field can effectively reject PS from passing through the separator via electrostatic repulsion, resulting in significantly improved cyclability, even when a simple mixture of elemental sulfur and conductive carbon is used as a sulfur cathode. The coating of BTO particles also considerably suppresses thermal shrinkage of the poly(ethylene) separator at high temperatures and thus enhances the safety of the cell adopting the given separator. The incorporation of poled particles can be universally applied to a wide range of rechargeable batteries (i.e., metal‐air batteries) that suffer from cross‐contamination of charged species between both electrodes.     

Hierarchically Assembled Mesenchymal Stem Cell Spheroids Using Biomimicking Nanofilaments and Microstructured Scaffolds for Vascularized Adipose Tissue Engineering

Composite multicellular spheroids composed of mesenchymal stem cells (MSCs) and synthetic biodegradable nanofilaments are fabricated. Extracellular‐matrix‐mimicking nanofilaments, prepared from transverse fragmentation of semicrystalline poly(L ‐lactic acid) nanofibers and subsequent surface modification with cell adhesive peptides, are used to form composite multicellular spheroids with MSCs by cellular self‐assembly. The size of the composite spheroids could be readily controlled with the integrated amount of the nanofilaments. The composite spheroids show enhanced adipogenic potential compared to homotypic spheroids. The resultant spheroids are used as building blocks for 3D biohybrid construction with the assistance of a microstructured scaffold fabricated by a direct polymer melt deposition process. An angiogenic growth factor, basic fibroblast growth factor, is also locally delivered in a sustained fashion from the heparinized scaffold surface for facile neovascularization of adipogenic tissue. The produced multiscaled and multifunctional hybrid MSC construct enable the successful formation of vascularized adipose tissue in vivo.     

Low‐Power 512‐Bit EEPROM Designed for UHF RFID Tag Chip

In this paper, the design of a low‐power 512‐bit synchronous EEPROM for a passive UHF RFID tag chip is presented. We apply low‐power schemes, such as dual power supply voltage (VDD=1.5 V and VDDP=2.5 V), clocked inverter sensing, voltage‐up converter, I/O interface, and Dickson charge pump using Schottky diode. An EEPROM is fabricated with the 0.25 μm EEPROM process. Power dissipation is 32.78 μW in the read cycle and 78.05 μW in the write cycle. The layout size is 449.3 μm × 480.67 μm.     

Effect of Ionization Characteristics on Electrochemical Migration Lifetimes of Sn-3.0Ag-0.5Cu Solder in NaCl and Na<Subscript>2</Subscript>SO<Subscript>4</Subscript> Solutions

Anodic dissolution characteristics and electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder in NaCl and Na₂SO₄ solutions were investigated using anodic polarization tests and water drop tests (WDT). The ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution (42.4 s) was longer than that in Na₂SO₄ solution (34.8 s). The pitting potential of Sn-3.0Ag-0.5Cu solder in NaCl solution (135 mV, SCE) was higher than that in Na₂SO₄ solution (−367 mV, SCE). The passivity film (SnO₂) formed on Sn-3.0Ag-0.5Cu solder during WDTs in NaCl solution was thicker than that formed in Na₂SO₄ solution. Therefore, the longer ECM lifetime of Sn-3.0Ag-0.5Cu solder in NaCl solution than in Na₂SO₄ solution can be attributed to the higher pitting potential in the NaCl solution, which is ascribed to the formation of a thicker passivity film (SnO₂) in the former. It was confirmed that microelements such as Ag and Cu do not take part in ECM because they form chemically stable intermetallic compounds with Sn. We believe that Sn is the only element that contributes to ECM, and dissolution of Sn at the anode is possibly the rate-determining step of ECM of Sn-3.0Ag-0.5Cu solder.     

Inverted Staggered Poly-Si Thin-Film Transistor With Planarized SOG Gate Insulator

In this letter, we have studied the inverted staggered thin-film transistor (TFT) using a spin-on-glass (SOG) gate insulator and a low-temperature polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon. The p-channel poly-Si TFT exhibited a field-effect mobility of 48.2 cm²/V ldr s, a threshold voltage of -4.2 V, a gate-voltage swing of 1.2 V/dec, and a minimum off-current of < 4 times 10^-13A/ mum at V_ds = -0.1 V. Therefore, the gate planarization technology by SOG can be applicable to low-cost large-area poly-Si active-matrix displays.     

Profit Aware Circuit Design Under Process Variations Considering Speed Binning

In this paper, a profit-aware design metric is proposed to consider the overall merit of a design in terms of power and performance. A statistical design methodology is then developed to improve the economic merit of a design considering frequency binning and product price profile. A low-complexity sensitivity-based gate sizing algorithm is developed to improve economic gain of a design over its initial yield-optimized design. Finally, we present an integrated design methodology for simultaneous sizing and bin boundary determination to enhance profit under an area constraint. Experiments on a set of ISCAS'85 benchmarks show in average 19% improvement in profit for simultaneous sizing and bin boundary determination, considering both leakage power dissipation and delay bounds compared to a design initially optimized for 90% yield at iso-area in 70-nm bulk CMOS technology.