Recent advances in isotropic conductive adhesives for electronics packaging applications

Isotropic conductive adhesives (ICAs) have recently received a lot of focus and attention from the researchers in electronics industry as a potential substitute to lead-bearing solders. Numerous studies have shown that ICAs possess many advantages over conventional soldering such as environmental friendliness, finer pitch printing, lower temperature processing and more flexible and simpler processing. However, complete replacement of soldering by ICAs is yet not possible owing to several limitations of ICAs which are mainly related to reliability aspects like limited impact resistance, unstable contact resistance, low adhesion and conductivity etc. Continued efforts for last 15 years have resulted in development of ICAs with improved properties. This review article is aimed at providing a better understanding of ICAs, their principles, performance and significant research and development work addressing the technological utility of ICAs.     

Effect of process parameters on impact strength of Al-7% Si alloy castings produced by VAEPC process

The castings produced by the evaporative pattern casting (EPC) process have blow holes. The blow holes in EPC castings are because of the non-escape of the gas produced as a result of burning of polystyrene pattern in the sand mold. To overcome the problem of blow holes, the EPC process is combined with the vacuum (V)- process. The vacuum applied to EPC mold draws the decomposed gases and improves the casting quality produced by the EPC process. The developed hybrid process has been termed as the vacuum assisted evaporative pattern casting (VAEPC) process. The objective of this paper to investigates the effect of process parameters, i.e, degree of vacuum, pouring temperature, grainfineness number, amplitude of vibration and time of vibration on the impact strength of Al-7% Si alloy castings in VAEPC process. In order to evaluate the effect of selected process parameters, the response surface methodology (RSM) is used to formulate a mathematical model which correlates the independent process parameters with the desired impact strength. The central composite rotatable design has been used to conduct the experiments. The results indicate that the impact strength decreases with increases in the grainfineness number and pouring temperature. Whereas, it has an inverse relationship with amplitude of vibration, time of vibration and degree of vacuum. The best value of impact strength (2.34 N/mm²) has been obtained at 400 mm Hg degree of vacuum imposed, 650°C as pouring temperature, 60 as sand grainfineness number, 460 μm as amplitude of vibration, and 70 s as time of vibration.     

Lean philosophy: implementation in a forging company

This research addresses the implementation of lean philosophy in a forging company with a focus on radial forging production flow lines. Here, the prime motive is to evolve and test several strategies to eliminate waste on the shop floor. In this research, a systematic approach is suggested for the implementation of lean principles. This paper describes an application of value stream mapping (VSM). Consequently, the present and future states of value stream maps are constructed to improve the production process by identifying waste and its sources. Furthermore, Taguchi’s method of design of experiments is pursued here to minimize the forging defects produced due to imperfect operating conditions. A noticeable reduction in set-up time and work-in-process (WIP) inventory level is substantiated. Finally, we conclude with a discussion of managerial implications and the future scope of research.     

Mechanism of the skeletal isomerisation of linear butenes over ferrierite: analysis of side reactions

An investigation of the effect of reaction conditions on product distribution in the skeletal isomerisation reaction of linear butenes has been carried out. The main reaction routes over ferrierite have been identified. Beside the main product isobutene, major by-product formation occurs. The unwanted reactions include dimerisation of butene to form octenes, hydrogen transfer yielding small amounts of saturated C₃ and C₄ hydrocarbons and disproportionation producing propene and pentenes. The most abundant by-products were pentene and propene, though these were not formed in equimolar amounts as could be expected. Oligomerisation experiments of propene over ferrierite produced large amounts of butene and pentene, revealing the presence of adsorbed nonene. The cracking of this surface species to hexene and propene is the most likely reaction route for the excess propene formation. This additional path to propene formation operates mainly at temperatures above 623 K.     

Novel NMDA antagonists: replacement of the pyridinium ring of 6,11-ethanobenzo[b]quinolizinium cations with heteroisoquinolinium cations

Replacement of the pyridinium ring of 6,11-ethanobenzo[b]quinolizinium cations with thiazolium (4a and 4b) and N-methylimidazolium (4c and 4d) resulted in equipotent compounds in the [3H]TCP binding assay. The corresponding N-methyl-1,2,4-triazolium analogs were less potent in this assay. The thiazolium derivative 4b, with a Ki = 2.9 nM, is being evaluated as a possible neuroprotective N-methyl-D-aspartic acid (NMDA) antagonist.     

Simplified method for the measurement of segmental colonic transit time

Segmental colonic transit has been measured in 101 patients. Two MBq of 111Indium absorbed on resin pellets and encapsulated in an enteric coated capsule was given at 7 00 am. Hourly images during the first day, and three images during each subsequent day were acquired for up to three days. Using all scan and patient data the scans were categorised in one of the five patterns of colonic transit: normal, rapid, right delay, left delay, or generalised delay. The geometric centres and per cent activity at each time point was compared between the five groups of colonic transit patients to find the best time for imaging and so to distinguish the five groups. During the first day, early images did not help in diagnosis of patterns of transit, however, in the later images (six hours onwards after the ingestion of the activity) the rapid transit groups could be identified. Images at 27 and 51 hours were both required to distinguish all five groups of patients from each other. Only in the 'normal' transit patients was there some excretion of the activity during the course of the second day, otherwise there was no difference in the images taken in the course of a day (second or third day). A simplified protocol requires a minimum of three images to distinguish all five patterns of colonic transit. The activity should be ingested in the morning (7 00 am) and the first image taken at the end of the working day (8-10 hours after ingestion), the second image on the morning of the second day, and the third image during the course of the third day. This simple protocol would provide all the clinically relevant information necessary for correct classification of the colonic transit.     

Transconductance and mobility of Si:B delta MOSFETs

Delta-doped MOSFETs have been fabricated in MBE-grown silicon using for the first time boron as the dopant within the delta layer. Current-voltage characteristics have been measured, and secondary ion mass spectrometry (SIMS) is used to confirm the location of the delta layer and the extent of layer broadening by diffusion during processing. Precise threshold voltages of the devices are difficult to determine since the devices (which all operate in depletion mode) take several volts to switch off. Transconductances of the devices have been measured, and it is shown how analysis of these results can yield estimates of the carrier mobility for transport along the delta layers despite the uncertainty in the threshold voltage. A clear transition is observed in the results which is attributed to the formation of a parasitic surface-channel field-effect transistor, providing conclusive evidence that the devices are conducting along a delta channel for part of the measured range of applied gate biases