Exact controllability for semilinear parabolic equations with Neumann boundary conditions

This paper studies the problem of exact boundary controllability of second-order semilinear parabolic equations when the control is under Neumann's boundary conditions. For a nonlinear term with a sublinear growth we prove the global null-controllability and for the superlinear growth case we prove the local exact controllability of the equations.     

Mechanical alloying in the Al-Bi alloy system

Mechanical alloying (MA) was carried out to investigate the MA behaviour of the immiscible Al-10, 30 at % Bi alloys. After the MA processing, the Al and Bi were finely and homogeneously alloyed. The Bi crystallite size decreased to 25 nm and 30 nm in the Al-10 at % Bi and Al-30 at % Bi alloys, respectively. By increasing the MA time, the hardness increased up to a value of 80 H _v, which is larger than that obtained from the rule of mixtures. The lattice parameter of Bi decreased by about 0.27%, which shows the formation of a non-equilibrium hcp Bi super-saturated solid solution. The extended solubility of Al in Bi was 1.9% in the Al-30 at % Bi alloy. Due to the extended solubility, depression of the melting temperature of hcp Bi was confirmed in the mechanically alloyed Al-Bi alloys. The maximum depression in the temperature was about 10 K. The measured values corresponded well with those estimated from the extrapolation of the solidus line.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

Analysis of Electromagnetic Scattering from an Eccentric Multilayered Sphere

An exact analytic solution of a plane electromagnetic (EM) wave scattered by an eccentric multilayered sphere (EMS) is obtained. It is assumed that the layers are perfect dielectrics and that the innermost core is a perfectly conducting sphere. Each center of a layer is translated along the incident axis. All fields are expanded in terms of the spherical vector wave functions with unknown expansion coefficients. The addition theorem for spherical wave functions is used prior to applying the boundary conditions. The unknown coefficients are determined by solving a system of linear equations derived from the boundary conditions. Numerical results of the scattering cross sections are presented on the plane of φ=0 degrees and φ=90 degrees. The convergence of modal solutions and the characteristics of patterns are examined with various geometries and permittivity distributions     

Synthesis and Spectral Properties of Mixed-Ligand Complexes of Lanthanide Perchlorate with Bis-(phenylsulfinyl)ethane and Organic Lewis Bases

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Classification and prediction of the critical heat flux using fuzzy theory and artificial neural networks

A new method to predict the critical heat flux (CHF) is proposed, based on the fuzzy clustering and artificial neural network. The fuzzy clustering classifies the experimental CHF data into a few data clusters (data groups) according to the data characteristics. After classification of the experimental data, the characteristics of the resulting clusters are discussed with emphasis on the distribution of the experimental conditions and physical mechanism. The CHF data in each group are trained in an artificial neural network to predict the CHF. The artificial neural network adjusts the weight so as to minimize the prediction error within the corresponding cluster. Application of the proposed method to the KAIST CHF data bank shows good prediction capability of the CHF, better than other existing methods.     

A One‐Kilobit PQR‐CMOS Smart Pixel Array

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and √T‐dependent thermal red shifts. We observed uniform bottom emissions from a 1‐kb smart pixel chip of a 32×32 InGaAs PQR laser array flip‐chip bonded to a 0.35 µm CMOS‐based PQR laser driver. The PQR‐CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.     

Extraction of penicillin G from simulated media by an emulsion liquid membrane process

The extraction of penicillin G from simulated media was performed by water/oil/water (w/o/w) emulsion liquid membranes (ELMs) and studied under various operational conditions in a batch system. The degree of extraction achieved was between 80% and 95% under specific conditions. A concentration of greater than nine times the initial concentration of penicillin G in the external phase was obtained in the internal phase. The pH of the internal aqueous solution, containing a basic salt, was theoretically calculated on the basis of the amount of penicillin G transported into the internal phase. The calculated results agreed with the experimental data well and were used to select a suitable type and concentration of a basic salt in the internal phase to give a pH within the range 5 to 8 where penicillin G was stable after the termination of extraction. The extraction of penicillin G was successfully performed by the ELM process with sodium carbonate in the internal phase.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.