Nonfullerene Electron Transporting Material Based on Naphthalene Diimide Small Molecule for Highly Stable Perovskite Solar Cells with Efficiency Exceeding 20%

This study reports a new nonfullerene electron transporting material (ETM) based on naphthalene diimide (NDI) small molecules for use in high‐performance perovskite solar cells (PSCs). These solar cells simultaneously achieve high power conversion efficiency (PCE) of over 20% and long‐term stability. New NDI‐ID (N,N′‐Bis(1‐indanyl)naphthalene‐1,4,5,8‐tetracarboxylic diimide) consisting of an N‐substituted indane group having simultaneous alicyclic and aromatic characteristics is synthesized by a low‐cost, one‐step reaction, and facile purification method. The partially flexible characteristics of an alicyclic cyclopentene group on indane groups open the possibility of low‐temperature solution processing. The conformational rigidity and aromaticity of phenyl and alicyclic groups contribute to high temporal stability by strong secondary bonds. NDI‐ID has herringbone packed semiconducting NDI cores that exhibit up to 0.2 cm² V^?1 s^?1 electron mobility in field effect transistors. The inverted PSCs based on CH(NH₂)₂PbI_3–xBr_x with NDI‐ID ETM exhibit very high PCEs of up to 20.2%, which is better than that of widely used PCBM (phenyl‐C61‐butyric acid methyl ester) ETM‐based PSCs. Moreover, NDI‐ID‐based PSCs exhibit very high long‐term temporal stability, retaining 90% of the initial PCE after 500 h at 100 °C with 1 sun illumination without encapsulation. Therefore, NDI‐ID is a promising ETM for highly efficient, stable PSCs.     

Few‐Layered WS2 Nanoplates Confined in Co,N‐Doped Hollow Carbon Nanocages: Abundant WS2 Edges for Highly Sensitive Gas Sensors

Edges of 2D transition metal dichalcogenides (TMDs) are well known as highly reactive sites, thus researchers have attempted to maximize the edge site density of 2D TMDs. In this work, metal‐organic framework (MOF) templates are introduced to synthesize few‐layered WS₂ nanoplates (a lateral dimension of ≈10 nm) confined in Co, N‐doped hollow carbon nanocages (WS₂_Co‐N‐HCNCs), for highly sensitive NO₂ gas sensors. WS₂ precursors are assembled in the surface cavity of Co‐based zeolite imidazole framework (ZIF‐67) and subsequent pyrolysis produced WS₂_Co‐N‐HCNCs. During the pyrolysis, the carbonized ZIF‐67 are doped by Co and N elements, and the growth of WS₂ is effectively suppressed, creating few‐layered WS₂ nanoplates functionalized Co‐N‐HCNCs. The WS₂_Co‐N‐HCNCs exhibit outstanding NO₂ sensing characteristics at room temperature, in terms of response (48.2% to 5 ppm), selectivity, response and recovery speed, and detection limit (100 ppb). These results are attributed to the enhanced adsorption and desorption kinetics of NO₂ on abundant WS₂ edges, confined in the gas permeable HCNCs. This work opens up an efficient way for the facile synthesis of edge abundant few‐layered TMDs combined with porous carbon matrix via MOF templating route, for applications relying on highly active sites.     

Highly Improved Sb2S3 Sensitized‐Inorganic–Organic Heterojunction Solar Cells and Quantification of Traps by Deep‐Level Transient Spectroscopy

The light‐harvesting Sb₂S₃ surface on mesoporous‐TiO₂ in inorganic–organic heterojunction solar cells is sulfurized with thioacetamide (TA). The photovoltaic performances are compared before and after TA treatment, and the state of the Sb₂S₃ is investigated by X‐ray diffraction, X‐ray photoelectron spectroscopy, and deep‐level transient spectroscopy (DLTS). Although there are no differences in crystallinity and composition, the TA‐treated solar cells exhibit significantly enhanced performance compared to pristine Sb₂S₃‐sensitized solar cells. From DLTS analysis, the performance enhancement is mainly attributed to the extinction of trap sites, which are present at a density of (2–5) × 10¹⁴ cm^?3 in Sb₂S₃, by TA treatment. Through such a simple treatment, the cell records an overall power conversion efficiency (PCE) of 7.5% through a metal mask under simulated illumination (AM 1.5G, 100 mW cm^–2) with a very high open circuit voltage of 711.0 mV. This PCE is, thus far, the highest reported for fully solid‐state chalcogenide‐sensitized solar cells.     

Quantitative Evaluation Method for Etch Sidewall Profile of Through‐Silicon Vias (TSVs)

Through‐silicon via (TSV) technology provides much of the benefits seen in advanced packaging, such as threedimensional integrated circuits and 3D packaging, with shorter interconnection paths for homo‐ and heterogeneous device integration. In TSV, a destructive cross‐sectional analysis of an image from a scanning electron microscope is the most frequently used method for quality control purposes. We propose a quantitative evaluation method for TSV etch profiles whereby we consider sidewall angle, curvature profile, undercut, and scallop. A weighted sum of the four evaluated parameters, nominally total score (TS), is suggested for the numerical evaluation of an individual TSV profile. Uniformity, defined by the ratio of the standard deviation and average of the parameters that comprise TS, is suggested for the evaluation of wafer‐to‐wafer variation in volume manufacturing.     

High‐Performance,Transparent Thin Film Hydrogen Gas Sensor Using 2D Electron Gas at Interface of Oxide Thin Film Heterostructure Grown by Atomic Layer Deposition

A high‐performance, transparent, and extremely thin (<15 nm) hydrogen (H₂) gas sensor is developed using 2D electron gas (2DEG) at the interface of an Al₂O₃/TiO₂ thin film heterostructure grown by atomic layer deposition (ALD), without using an epitaxial layer or a single crystalline substrate. Palladium nanoparticles (≈2 nm in thickness) are used on the surface of the Al₂O₃/TiO₂ thin film heterostructure to detect H₂. This extremely thin gas sensor can be fabricated on general substrates such as a quartz, enabling its practical application. Interestingly, the electron density of the Al₂O₃/TiO₂ thin film heterostructure can be tailored using ALD process temperature in contrast to 2DEG at the epitaxial interfaces of the oxide heterostructures such as LaAlO₃/SrTiO₃. This tunability provides the optimal electron density for H₂ detection. The Pd/Al₂O₃/TiO₂ sensor detects H₂ gas quickly with a short response time of <30 s at 300 K which outperforms conventional H₂ gas sensors, indicating that heating modules are not required for the rapid detection of H₂. A wide bandgap (>3.2 eV) with the extremely thin film thickness allows for a transparent sensor (transmittance of 83% in the visible spectrum) and this fabrication scheme enables the development of flexible gas sensors.     

Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Graphene has been gradually studied as a high‐frequency transmission line material owing to high carrier mobility with frequency independence up to a few THz. However, the graphene‐based transmission lines have poor conductivity due to their low carrier concentration. Here, it is observed that the radio frequency (RF) transmission performance could be severely hampered by the defect‐induced scattering, even though the carrier concentration is increased. As a possible solution, the deposition of the amorphous carbon on the graphene is studied in the high‐frequency region up to 110 GHz. The DC resistance is reduced by as much as 60%, and the RF transmission property is also enhanced by 3 dB. Also, the amorphous carbon covered graphene shows stable performance under a harsh environment. These results prove that the carrier concentration control is an effective and a facile method to improve the transmission performance of graphene. It opens up the possibilities of using graphene as interconnects in the ultrahigh‐frequency region.     

Laterally coupled buried heterostructure high-Q ring resonators

All-buried InP-InGaAsP ring resonators laterally coupled to bus waveguides are demonstrated. The buried configurations offer a lower built-in refractive index step along the resonator periphery, which affords enhanced optical coupling coefficients between the waveguides and reduced scattering losses caused by the resonator sidewall imperfections. Very low optical intensity attenuations of 0.4 cm/sup -1/ and coupling-limited quality factors of greater than 10/sup 5/ are observed from 200-/spl mu/m-radii ring resonators. The measured spectral linewidth is as narrow as 0.0145 nm.