Algebraic decoding of (103, 52, 19) and (113, 57, 15) quadratic residue codes

In this paper, two algebraic decoders for the (103, 52, 19) and (113, 57, 15) quadratic residue codes, which have lengths greater than 100, are presented. The results have been verified by software simulation that programs in C++ language have been executed to check possible error patterns of both quadratic residue codes.     

Effects of Na, Cu, Ni and Co Modifications on the Activity and Characteristics of Rh/Al2O3 Catalysts for NO Reduction

This study used different metals to modify Rh/Al₂O₃ catalysts for NO reduction in a simulated waste incineration flue gas containing 6% O₂. The characteristics of the modified catalysts were analyzed using BET, TEM and XRD. The results of the experiment reveal that Na addition can significantly affect the properties of Rh/Al₂O₃ catalysts on the BET surface area and Rh metal dispersion. Furthermore, Na addition was found to significantly enhance the NO conversion of Rh/Al₂O₃ at 250–350 °C. On the contrary, Cu, Ni, and Co addition was found to have slight suppression effects.     

Onset of buoyancy-driven convection in melting from below

When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.     

Catalytic oxidation of naphthalene using a Pt/Al2O3 catalyst

Polycylic aromatic hydrocarbons (PAHs) are listed as carcinogenic and mutagenic priority pollutants, belonging to the environmental endocrine disrupters. Most PAHs in the environment stem from the atmospheric deposition and diesel emission. Consequently, the elimination of PAHs in the off-gases is one of the priority and emerging challenges. Catalytic oxidation has been widely used in the destruction of organic compounds due to its high efficiency (or conversion of reactants), its economic benefits and good applicability.

This study investigates the application of the catalytic oxidation using Pt/γ-Al₂O₃ catalysts to decompose PAHs and taking naphthalene (the simplest and least toxic PAH) as a target compound. It studies the relationships between conversion, operating parameters and relevant factors such as treatment temperatures, catalyst sizes and space velocities. Also, a related reaction kinetic expression is proposed to provide a simplified expression of the relevant kinetic parameters.

The results indicate that the Pt/γ-Al₂O₃ catalyst used accelerates the reaction rate of the decomposition of naphthalene and decreases the reaction temperature. A high conversion (over 95%) can be achieved at a moderate reaction temperature of 480 K and space velocity below 35,000 h⁻¹. Non-catalytic (thermal) oxidation achieves the same conversion at a temperature beyond 1000 K. The results also indicate that Rideal–Eley mechanism and Arrhenius equation can be reasonably applied to describe the data by using the pseudo-first-order reaction kinetic equation with activation energy of 149.97 kJ/mol and frequency factor equal to 3.26 × 10¹⁷ s⁻¹.     

A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

Synthesis of Mg-α-sialon from the mixture of silicon, aluminum and magnesia powders in a flowing nitrogen atmosphere

Synthesis of Mg-α-Sialon has been investigated by the mixture of silicon, aluminum and magnesia powders in a flowing nitrogen atmosphere in the range of 1300–1600 °C, when Mg-α-Sialon is designed with a chemical formulation of Mg _x Si_12−3x Al_3x O _x N_16−x in present work. The results showed that Mg-α-sialon initially occurred at 1400 °C and basically increased with elevated temperatures. For the samples of x = 0.6, 0.8 and 1.0 the products mainly consisted of Mg-α-Sialon with small amounts of Si, AlN and 21R AlN-polytypoid phases at 1600° C. However, in final products of x = 1.2, 1.4 and 1.6 only a little of Mg-α-Sialon formed and a great amount of Si remained in these samples at all the fired temperatures. Fortunately, the content of Mg-α-Sialon in these samples were obviously increased by adding a small amount of α-Si₃N₄ as seeds before nitridation.     

桉木硫酸盐浆不同漂白技术的评价

高白度漂白商品浆的白度已从通常的88%～90%提高到更高的水平,达到92%.这种高白度的要求导致了纸厂使用高价格光学漂白剂,以及过量使用这种添加剂的环境风险.     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.