Some observations from interrupted lifetest of GaInAsP/InP inverted-rib laser diodes

Conventionally, lifetests of semiconductor laser diodes usually involved operating the devices continuously at either constant power output or drive current, with periodic recording of their characteristics. In this paper, some effects arising from interrupted lifetest of 1.3 m GaInAsP-InP inverted-rib laser diodes are reported. This unconventional lifetest method involves constant power biasing at 4 mW/facet and 8 mW/facet respectively at 50°C, followed by a period during which the lifetest is interrupted and the devices left unbiased at room temperature. Subsequently, the devices were put back on constant power biasing at 50°C. Among a number of parameters, pronounced reduction in the threshold current, current for 4 mW/facet and 8 mW/facet were observed, indicating strong recovery effects commencing from the time when the life-test was interrupted. Redistribution of mobile defects in the cladding layer is postulated to be the cause of the degradation recovery, and the data supports the occurrence of an aging-current dependent defect annihilation mechanism. Such recovery effects have so far been observed to occur only in the GaInAsP-InP inverted-rib devices.     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

Theory of <Emphasis Type="Italic">d</Emphasis>-Wave High Temperature Superconductivity in the Cuprates Involving Non-linear Lattice Modes

The transition mechanism in high temperature cuprate superconductors is an outstanding puzzle. A previous suggestion on the role of non-linear local lattice instability modes on the microscopic pairing mechanism in high temperature cuprate superconductors (Lee, J. Supercond. Nov. Magn. 23(3), 333; 2009) is re-examined to provide a viable mechanism for superconductivity in these cuprates via an unusual lattice vibration in which an electron is predominantly interacting with a non-linear Q ₂ mode of the oxygen clusters in the CuO₂ planes. It is shown that the interaction has explicit d-wave symmetry and leads to an indirect coupling of d-wave symmetry between electrons. As a follow-up of Lee (J. Supercond. Nov. Magn. 23(3), 333; 2009), in this paper, we report detailed derivation of the superconducting gap equation and numerical solutions for the transition temperature as inherently integrated into the so-called extended Hubbard model (EHM). A unique feature in the EHM is that the transition temperature has an inherent k-dependence. In addition, superconducting gap solutions are restrained to specific regions in the first Brillouin zone (1BZ). It is very feasible to expect that the EHM naturally inherits a huge parameter space in which experimentally measured results, such as the well-known superconducting dome and the phase diagram from electronic Raman scattering (Sacuto et al., Rep. Prog. Phys. 76(2), 022502; 2013) can be accommodated. The EHM model hence offers a viable venue to search for or confirm any signature in k-point-sensitive experimental measurements.     

Electromigration effect on Sn-58 % Bi solder joints with various substrate metallizations under current stress

The electromigration behavior of low-melting temperature Sn-58Bi (in wt%) solder joints was investigated with a high current density between 3 and 4.5 × 10³ A/cm² between 80 and 110 °C. In order to analyze the impact of various substrate metallizations on the electromigration performance of the Sn-58Bi joint, we used representative substrate metallizations including electroless nickel immersion gold (ENIG), electroless nickel electroless palladium immersion gold (ENEPIG), and organic solderability preservatives (OSP). As the applied current density increased, the time to failure (TTF) for electromigration decreased regardless of the temperature or substrate metallizations. In addition, the TTF slightly decreased with increasing temperature. The substrate metallization significantly affected the TTF for the electromigration behavior of the Sn-58Bi solder joints. The substrate metallizations for electromigration performance of the Sn-58Bi solder are ranked in the following order: OSP-Cu, ENEPIG, and ENIG. Due to the polarity effect, current stressing enhanced the fast growth of intermetallic compounds (IMCs) at the anode interface. Cracks occurred at the Ni₃Sn₄ + Ni₃P IMC/Cu interfaces on the cathode sides in the Sn-58Bi/ENIG joint and the Sn-58Bi/ENEPIG joint; this was caused by the complete consumption of the Ni(P) layer. Alternatively, failure occurred via deformation of the bulk solder in the Sn-58Bi/OSP-Cu joint. The experimental results confirmed that the electromigration reliability of the Sn-58Bi/OSP-Cu joint was superior to those of the Sn-58Bi/ENIG or Sn-58Bi/ENEPIG joints.     

Highly Exposed ?NH2 Edge on Fragmented g-C3N4 Framework with Integrated Molybdenum Atoms for Catalytic CO2 Cycloaddition: DFT and Techno-Economic Assessment

This study focuses on the applicability of single-atom Mo-doped graphitic carbon nitride (GCN) nanosheets which are specifically engineered with high surface area (exfoliated GCN),  NH₂ rich edges, and maximum utilization of isolated atomic Mo for propylene carbonate (PC) production through CO₂ cycloaddition of propylene oxide (PO). Various operational parameters are optimized, for example, temperature (130 °C), pressure (20 bar), catalyst (Mo₂GCN), and catalyst mass (0.1 g). Under optimal conditions, 2% Mo-doped GCN (Mo₂GCN) has the highest catalytic performance, especially the turnover frequency (TOF) obtained, 36.4 h⁻¹ is higher than most reported studies. DFT simulations prove the catalytic performance of Mo₂GCN significantly decreases the activation energy barrier for PO ring-opening from 50–60 to 4.903 kcal mol⁻¹. Coexistence of Lewis acid/base group improves the CO₂ cycloaddition performance by the formation of coordination bond between electron-deficient Mo atom with O atom of PO, while  NH₂ surface group disrupts the stability of CO₂ bond by donating electrons into its low-level empty orbital. Steady-state process simulation of the industrial-scale consumes 4.4 ton h⁻¹ of CO₂ with PC production of 10.2 ton h⁻¹. Techno-economic assessment profit from Mo₂GCN is estimated to be 60.39 million USD year⁻¹ at a catalyst loss rate of 0.01 wt% h⁻¹.     

Adaptive observer-based trajectory tracking control of nonholonomic mobile robots

In this paper, an adaptive observer-based trajectory tracking problem is solved for nonholonomic mobile robots with uncertainties. An adaptive observer is first developed to estimate the unmeasured velocities of a mobile robot with model uncertainties. Using the designed observer and the backstepping technique, a trajectory tracking controller is designed to generate the torque as an input. Using Lyapunov stability analysis, we prove that the closed-loop system is asymptotically stable with respect to the estimation errors and tracking errors. Finally, the simulation results are presented to validate the performance and robustness of the proposed control system against uncertainties.