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91.
Effect of sodium dodecyl sulfate (SDS) on the adsorption of Zn(II) and Ni(II) on CMOC was investigated. Addition of SDS favored the adsorption process. Adsorption process was found to be dependent on concentration, pH, dose, contact time and temperature. Thermodynamic studies showed that the process is endothermic and spontaneous. The spontaneity increases with increase in temperature. DR isotherm suggests that the adsorption is chemical in nature. Kinetics studies showed better applicability of pseudo second order model. Reichenberg equation showed that pore diffusion was not only the rate determining step but some other process like film diffusion was also involved in the adsorption. These metals could be desorbed (75–80%) with 0.1 M HCl as eluent.  相似文献   
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A femoral artery pseudoaneurysm is one complication of vascular intervention, and the incidence is increasing. Early management is then needed to avoid potential dangers from it. It differs from a true aneurysm in that it doesn't include any component of the vascular wall, and is not studied as much as a true aneurysm. Here, a model of a femoral pseudoaneurysm was made and a Computational Fluid Dynamics(CFD) simulation was verified with PIV experiment. Afterwards, a CFD simulation with two different models was performed to look for any findings which may help in developing new treatment methods.  相似文献   
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Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe2‐ and MoS2‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 1011 for octadecyltrichlorosilane (OTS) p‐doping and ≈1011 for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm2 V?1 s in OTS/WSe2 transistors and from 28.75 to 142.2 cm2 V?1 s in APTES/MoS2 transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 104 A W?1) in the OTS/WSe2 devices and by a factor of ≈26.4 (from 219 to 5.75 × 103 A W?1) in the APTES/MoS2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe2 devices and ≈24.5‐fold in the APTES/MoS2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.  相似文献   
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提出一种红外图像多传感器超分辨率重建算法。 算法存在两个关键点:一是有效利用两类图像的相关性;二是针对红外图像的特点利用其自 身信息 构造正则化模型。采用相位一致性算法提取可见光图像边缘,利用此边缘信息对正则化模型 加权,以 充分利用可见光和红外图像的相关性;将一阶梯度锐化算子引入总广义变分模型,构成针对 红外 图像特点的正则化模型;最后采用一阶主-对偶优化算法求得加权后模型的最优解。实验表 明,本文算法可获得边缘清晰的重建结果,并且有效抑制噪声,在主观视觉效果和客观评价 指标方面均优于其他算法。  相似文献   
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This work focused on the shrinkage and drying stress of red pine (Pinus densiflora) wood during kiln drying and investigated transverse shrinkage and moisture changes in thin specimens using digital image analysis and near-infrared spectroscopy, respectively. The effect of specimen thickness, which ranged from 1 to 10?mm on shrinkage, was analyzed under drying conditions with restrained stresses. The shrinkage due to moisture content was presented in the form of an exponential function and a linear function above and below the fiber saturation point, respectively. A shorter existence of the moisture gradient increased the transverse shrinkage. The tangential and radial shrinkage at the tissue level in 30-µm (longitudinal) thick slices was measured and compared with the shrinkage of above specimens with difference thicknesses. The transverse shrinkage of 1-mm-thick specimen is similar to the shrinkage measured using 30-µm-thick slice.  相似文献   
100.
Easily processed, low cost, and highly efficient solar cells are desirable for photovoltaic conversion of solar energy to electricity. We present the fabrication of precursor solution processed CuInGaS2 (CIGS) thin film solar cells on transparent indium tin oxide (ITO) substrates. The CIGS absorber film was prepared by a spin-coating method, followed by two successive heat treatment processes. The first annealing process was on a hot plate at 300 °C for 30 min in air to remove carbon impurities in the film; this was followed by a sulfurization process at 500 °C in an H2S(1%)/Ar environment to form a polycrystalline CIGS film. The absorber film with an optical band-gap of 1.52 eV and a thickness of about 1.1 µm was successfully synthesized. Because of the usage of a transparent glass substrate, a bifacial CIGS thin film device could be achieved; its power conversion efficiency was measured to be 6.64% and 0.96% for front and rear illumination, respectively, under standard irradiation conditions.  相似文献   
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