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11.
Improved homogenization of Ni in sintered steels through the use of Cr-containing prealloyed powders
The homogenization of Ni in powder metal (PM) steel compacts is usually difficult even after high-temperature sintering at
1250°C. An earlier study by the authors demonstrated that this problem can be alleviated through the addition of 0.5 wt pct
Cr in the form of stainless steel powders. To further improve the microstructure and mechanical properties of Ni-containing
PM steels and to understand the mechanisms, an attempt was made in this study using the Fe-3Cr-0.5Mo prealloyed powder as
the base material. The results showed that the distribution of the Ni additives was significantly improved. As a result, the
tensile strength of the Fe-3Cr-0.5Mo-4Ni-0.5C compact sintered at 1250°C reached 1323 MPa. The elongation was higher than
1 pct. These sinter-hardened properties, which were attained using a slow furnace cooling rate, were comparable to those of
the sinter-hardened alloys reported in the literature using accelerated cooling and were equivalent to those of the best quenched-and-tempered
alloys registered in the Metal Powder Industries Federation (MPIF) standards. These improvements were attributed to the positive
effect of Cr addition on alloy homogenization due to the reduction of the repelling effect between Ni and C, as was demonstrated
through the thermodynamic analysis using the Thermo-Calc program. 相似文献
12.
Ohne Zusammenfassung 相似文献
13.
K.P. Pipe R.J. Ram 《Photonics Technology Letters, IEEE》2003,15(4):504-506
By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices. 相似文献
14.
Note on B-splines, wavelet scaling functions, and Gabor frames 总被引:3,自引:0,他引:3
Grochenig K. Janssen A.J.E.M. Kaiblinger N. Pfander G.E. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(12):3318-3320
Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,. 相似文献
15.
Supported metal catalysts, particularly noble metals supported on SiO2, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO2/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO2 films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon. 相似文献
16.
The In-site of Ba2In2O5 with Brownmillerite structure was partially substituted for Ce4+ ions in order to examine the doping effect on the order-disorder transition. Ba2In2 – x
Ce
x
O5 + x/2 (x = 0.1, 0.2, 0.3, 0.5, 1.0, and 1.5) were prepared by solid state reaction. X-Ray diffraction analyses of these powder samples demonstrated that Ba2In2 – x
Ce
x
O5 + x/2 (x = 0.1 and 0.2) possesses Brownmillerite structure. With increasing content of Ce4+ ion the crystal system of Ba2In2 – x
Ce
x
O5 + x/2 (x = 0.3, 0.5, and 1.0) changed to cubic perovskite structure above the order-disorder transition temperature of Ba2In2O5. Arrhenius plots of the electrical conductivities of Ba2In2 – x
Ce
x
O5 + x/2 (x = 0.2, 0.3, and 1.0) exhibited no discontinuity. These compounds had high transference numbers of oxide ion above 973 k. 相似文献
17.
The basic methods of verifying continuous automatic belt weighers are described. A comparative analysis of these methods on the basis of experimental studies is made and ways of implementing the results in industry are recommended. 相似文献
18.
Yu. I. Golovin D. V. Lopatin R. K. Nikolaev A. V. Umrikhin 《Technical Physics Letters》2004,30(5):426-428
The effect of crystal orientation on the photogeneration of free charge carriers was studied for C60 single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with
respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C60 crystal. 相似文献
19.
We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations. 相似文献
20.
E. Griese Prof. Dr.-Ing. 《e & i Elektrotechnik und Informationstechnik》2003,120(6):186-191
Optical interconnection technology on the printed circuit board level is a key technology for future microelectronic equipment. The consideration of functional, technological, and economical requirements results in a hybrid solution, where electrical and optical interconnects are integrated into one substrate called electrical optical printed circuit board. The significant part of the entire design process for electrical optical printed circuit boards is marked by the design supporting modelling and simulation of optical interconnects. Based on an abstract model for an entire optical interconnect a simulation model for optical multimode-waveguides is presented, taking into account all significant waveguide properties. Apart from that, the modeling of active components (laser- and photo-diodes) is addressed. 相似文献