Active filter system implementation

Adjustable speed AC drives with low input current THD are becoming increasingly important in industry. This article has detailed the implementation of a parallel active filter, which is integrated within a 450 kW adjustable speed drive to provide an overall system which conforms to IEEE 519, and which provides significant benefits on a system level. The design of the active filter is seen to be driven by overall system specifications which include input current THD, efficiency, displacement power factor, a high level of integration with the load converter, and cost targets. Active filter operation and control has been analyzed at a detailed level, and fundamental issues relating to current regulator topology and operation, limits on compensation capability, DC bus control, switching frequency ripple suppression, etc., have all been addressed, and have all been shown to be very important in terms of helping the system meet its performance objectives. The overall drive system including the active filter, meets IEEE 519 by reducing the supply current THD from 26.8% without the active filter to 4.1% with the active filter operating. This is achieved in presence of supply voltage THD of 2.3% and filter terminal voltage V _f unbalance of 1.3% and, includes an ASD load induced subharmonic component at 33 Hz. Further, individual harmonic limits are met up to the 35th harmonic     

An experimental study of 1.5 keV X-ray radiation effects on CMOS devices

The total dose radiation effects are studied on CMOS devices consisting of n- and p-MOSFETs and logic circuits. The devices on a test chip were designed in two micron, double metal, single polysilicon, p-well CMOS technology and fabricated through the Metal-Oxide Semiconductor Implementation System (MOSIS) foundry. Effects of 1.5 keV AlK_a X-ray irradiation on the threshold voltage of n- and p-MOSFETs, propagation delay time and voltage transfer characteristic of an inverter were observed and the results are presented. Degradation in performance of an inverter chain, a three stage ring oscillator and a four-by-four shift register was also observed with increasing radiation dose levels. The devices were unbiased during the irradiation. The samples were radiated at a dose rate of 1 × 10⁵ rads(SiO₂)/min.     

COMPARATIVE LIMITING FLUX ANALYSIS OF BLACK LIQUOR AND POLYETHYLENE GLYCOL IN ULTRAFILTRATION

Ultrafiltration of black liquor was carried out using an asymmetric membrane and the results were compared with that of polyethylene glycol, a standard macromolecule, in a stirred batch cell. The effects of system parameters, e.g., pressure, concentration and stirrer speed on permeate flux and solute rejection were studied extensively for both the solutes.

An osmotic pressure model was used to analyze experimental results. To take into account the phenomena of concentration polarization, an extra resistance term, called the polarization layer resistance (R_p), was incorporated into the model. The polarization layer resistance was found to be a function of flow regime and concentration at the membrane. To correlate these, the following two types of relationship were examined and tested with the experimental results,

and

where a, b, c, a₁, b₁, are constants.     

A Novel Electroless Process for Embedding a Thin Film Resistor on the Benzocyclobutene Dielectric

To realize embedded resistors on multilayer benzocyclobutene (BCB) either on-chip or on-board, a low-cost large format electroless process for deposition of NiP and NiWP thin-film resistors using both low-temperature (25°C) and high-temperature (90°C) baths has been developed. The electroless process exhibits uniform resistor thickness in the submicron range and offers low profile and excellent adhesion to the BCB dielectric layer. The resistor films also act as a seed layer for direct electroplating of copper traces. The NiP alloys can also be tailored to a variable temperature coefficient of resistance (TCR) with different alloy compositions. The electroless process can be adopted in the PCB manufacturing industries with no additional investment. This article is the first report on electroless plated thin film resistors on low loss BCB dielectric.     

1.54 lm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

A GaSb quantum-well (QW) laser diode grown monolithically on a 5deg miscut Si (001) substrate is presented. The III-Sb epi-structure is grown monolithically on the miscut Si substrate via a thin (50 nm) AlSb nucleation layer. The 13% lattice mismatch between AlSb and Si is accommodated by a self-assembled 2D array of interfacial misfit dislocations (IMF). The 5deg miscut geometry enables simultaneous IMF formation and anti-phase domain suppression. The 1 mm times 100 mum GaSb QW laser diode operates under pulsed conditions at 77 K with a threshold current density of 2 kA/cm² and a maximum peak power of ~20 mW. Furthermore, the device is characterised by a 9.1 Omega forward resistance and a leakage current density of 0.7 A/cm² at -5 V.     

Waveform classification and information extraction from LIDAR databy neural networks

Two different neural network schemes for the classification of light detection and ranging (LIDAR) waveforms for the LARSEN 500 airborne system and for extraction of ocean information are proposed. The first method employs a single layer of linear neurons for classification of waveforms into various clusters. Both unsupervised and supervised learning algorithms have been employed to demonstrate the spatial distribution of milt in near-shore waters. In the second method, a new multistage multilayer feedforward architecture is used for the classification of the waveforms and for the extraction of various types of ocean information. The stage I networks work in a parallel fashion and map the input waveforms to a set of characteristics. The networks in stage II use these characteristics to assign a signature number to the waveform or extract other information. Both the schemes are used with real-world data collected by the LARSEN 500 system. The paper concludes with experimental results and comparisons     

Carrier dynamics in high-speed (f/sub -3 dB/>40 GHz) 0.98-/spl mu/m multiquantum-well tunneling injection lasers determined from electrical impedance measurements

Carrier capture times in InGaAs-AlAs-GaAs 0.98-/spl mu/m multiquantum-well tunneling injection lasers with f/sub -3 dB//spl sim/43-48 GHz have been determined from analysis of high frequency electrical impedance measurements. The capture times range from 14 ps, at biases around threshold, to about 1 ps, at 50-mA bias. The small capture times agree well with tunneling times obtained directly from pump-probe measurements. The impedance measurements also suggest that the carrier lifetime in the well is much less than the escape time from the well, consistent with the cold carrier distribution associated with a tunneling injection mechanism.     

Electroabsorption and electrooptic effect in SiGe-Si quantum wells:realization of low-voltage optical modulators

We have calculated the behavior of the band-to-band absorption coefficient in square, coupled, and graded bandgap Si_0.6Ge _0.4-Si quantum wells as a function of the transverse electric field. It is seen that due to the weak confinement of the electrons (ΔE_c⩽20 meV) the absorption of photons with energy equal to the interband transition energy can be reduced at very small values of the transverse electric field. This phenomenon lends itself to the design of efficient amplitude modulators. In addition, the resulting change in the refractive index is also large and the corresponding linear electrooptic coefficient is calculated to be as large as 1.9×10^-10 m/V in square wells. This effect could prove to be the basis for the realization of efficient Si-based electrooptic modulators. Device designs are discussed     

Consequences of structural disorder on laser properties in quantumwire lasers

The effect of interface-roughness-related disorder on the electronic and optoelectronic properties of a quantum wire structure are studied. It is seen that the disorder causes strong localization in the quasi-one-dimensional system. While the electronic states are seriously perturbed, the density of states is not affected drastically. Optoelectronic properties as reflected in the interband transition related phenomenon are not found to suffer significant deterioration as a result of the disorder. However, the results suggest that intraband relaxation processes may be seriously affected because of electron (hole) states being localized in different regions of the wire     

Influence of adjacent channel interference on thefrequency-modulated WDM optical communication system

The effect of adjacent channel interference on the frequency modulated wavelength division multiplexing (FM-WDM) optical communication system is analyzed in this paper. This system uses injection-locked optical discriminator at the output for the demodulation of FM channels. Adjacent channel interference results in crosstalk in the FM-WDM communication system which has been calculated. Dependence of crosstalk on the channel spacing, received signal power in a particular channel, and linewidth enhancement factor of the slave laser incorporated in the optical discriminator has been numerically investigated. The injection-locked discriminator has a typical output crosstalk level of -50 dB for a channel spacing of 100 GHz with optical injection level of -30 dB into the slave laser and is a suitable subsystem to be used in FM-WDM communication system