Engineering of Lipid Nanoparticles by the Multifunctionalization of the Surface with Amino Acid Derivatives for the Neutralization of a Target Toxic Peptide

Protein affinity reagents (e.g., antibodies) are often used for basic research, diagnostics, separations, and disease therapy. Although a lot of “synthetic” protein affinity reagents have been developed as a cost-effective alternative to antibodies, their low biocompatibility is a considerable problem for clinical application. Lipid nanoparticles (LNP) represent a highly biocompatible drug delivery agent. However, little has been reported that LNP itself works as a protein affinity reagent in living animals. Here, LNP is engineered for binding to and neutralizing a target toxic peptide in living animals by multifunctionalization with amino acid derivatives. Multifunctionalized LNP (MF-LNP) is prepared using amino acid derivative-conjugated lipids. Optimized MF-LNP exhibits nanomolar affinity to the target toxic peptide and inhibits toxic peptide-dependent hemolysis and cytotoxicity. In addition, MF-LNP captures and neutralizes the toxic peptide after intravenous injection in the bloodstream; in addition, MF-LNP does not release the toxic peptide in the accumulated organ. These results reveal the potential of using LNP as a highly biocompatible protein affinity reagent such as an antidote.     

Effects of uni-axial mechanical stress on IGBT characteristics

This paper describes the impacts of mechanical stress on vertical power devices. The stress dependence of the DC characteristics of trench insulated gate bipolar transistors (IGBTs) was measured. The experimental results could be reproduced by the device simulation, which included stress dependence models of the carrier mobility and the band gap. We found that the stress dependence of the on-state voltage mainly arose from the MOSFET portion of the IGBT. Using the device simulation, we estimated the effects of mechanical stress on the surge voltage and the saturation current, which give us the important information for designing a power module with higher ruggedness.     

Dynamic Power Integrity Control of ATE for Eliminating Overkills and Underkills in Device Testing

This paper proposes a power integrity control technique for dynamically controlling power supply voltage fluctuations for a device under test (DUT), and demonstrates its effectiveness for eliminating the overkills/underkills due to the difference of power supply impedance between an automatic test equipment (ATE) and a practical operating environment of the DUT. The proposed method injects compensation currents into the power supply nodes on the ATE system in a feed-forward manner such that the ATE power supply waveform matches with the one on the customer’s operating environment of the DUT. A method for calculating the compensation current is also described. Experimental results show that the proposed method can emulate the power supply voltage waveform under a customer’s operating condition and eliminate 95 % of overkills/underkills in the maximum operating frequency testing with 105 real silicon devices. Limitations and applications of the proposed method are also discussed.     

Dark-field transmission electron microscopy for a tilt series of ordering alloys: toward electron tomography

Here we show a technique to obtain a tilt series of dark-field (DF) transmission electron microscopy (TEM) images in ordering alloys for tomographic three-dimensional (3D) observations. A tilt series of DF TEM images of D1a-ordered Ni4Mo precipitates in a Ni-Mo alloy was successfully obtained by adjusting a diffraction condition for a superlattice reflection from the Ni4Mo precipitates. Since the superlattice reflection usually has a long extinction distance, dynamic diffraction effects such as thickness fringes can be suppressed to some extent with precise realignment of the diffraction condition. By using the tilt series of the DF TEM images, we attempted a computed TEM tomography to visualize 3D shapes and positions of the precipitates.     

Low-Temperature Physical Properties of Ba8Ni x Ge46?x (x?=?3,?4,?6)

Polycrystalline samples of type?I clathrate Ba₈Ni _x Ge_46?x (x?=?3, 4, 6) have been synthesized using a radio-frequency (RF) induction furnace. Ba₈Ni _x Ge_46?x samples show metallic-like behavior (d??/dT?>?0) with high resistivity at room temperature, and diamagnetic susceptibility at 2?K and 300?K. The charge carriers vary from n type to p type depending on the Ni stoichiometry. The carrier concentrations at 300?K are calculated to be 5.84(3)?e^?/cell for x?=?3, 2.29(1)?e^?/cell for x?=?4, and 3.29(1)?h⁺/cell for x?=?6. The deviation of the carrier concentrations from the values expected based on 4-bonded Ni suggests that vacancies may play a very important role in the electronic states. The effective carrier masses are estimated from the low-temperature heat capacity data.     

Colored Fluorescent Silk Made by Transgenic Silkworms

Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.     

Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N₂ or H₂/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al₂O₃ cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.     

DNA Computing Boosted by a Cationic Copolymer

The huge information storage capability of DNA and its ability to self‐assemble can be harnessed to enable massively parallel computing in a small space. DNA‐based logic gates are designed that rely on DNA strand displacement reactions; however, computation is slow due to time‐consuming DNA reassembly processes and prone to failure as DNA is susceptible to degradation by nucleases and under certain solution conditions. Here, it is shown that the presence of a cationic copolymer boosts the speed of DNA logic gate operations that involve multiple and parallel strand displacement reactions. Two kinds of DNA molecular operations, one based on a translator gate and one on a seesaw gate, are successfully enhanced by the copolymer without tuning of computing conditions or DNA sequences. The copolymer markedly reduces operation times from hours to minutes. Moreover, the copolymer enhances nuclease resistance.     

Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.