Anisotropy of Charge Transport in a Uniaxially Aligned and Chain‐Extended,High‐Mobility,Conjugated Polymer Semiconductor

Charge transport in the ribbon phase of poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT)—one of the most highly ordered, chain‐extended crystalline microstructures available in a conjugated polymer semiconductor—is studied. Ribbon‐phase PBTTT has previously been found not to exhibit high carrier mobilities, but it is shown here that field‐effect mobilities depend strongly on the device architecture and active interface. When devices are constructed such that the ribbon‐phase films are in contact with either a polymer gate dielectric or an SiO₂ gate dielectric modified by a hydrophobic, self‐assembled monolayer, high mobilities of up to 0.4 cm² V^?1 s^?1 can be achieved, which is comparable to those observed previously in terrace‐phase PBTTT. In uniaxially aligned, zone‐cast films of ribbon‐phase PBTTT the mobility anisotropy is measured for transport both parallel and perpendicular to the polymer chain direction. The mobility anisotropy is relatively small, with the mobility along the polymer chain direction being higher by a factor of 3–5, consistent with the grain size encountered in the two transport directions.     

Design of concatenated space-time block codes using signal space diversity and the Alamouti scheme

New full-rate space-time block codes achieving full diversity for quadrature amplitude modulation (QAM) using an even number of transmit antennas over quasi-static Rayleigh fading channels are proposed. The proposed codes are constructed by serially concatenating unitary rotating precoders with the Alamouti code. The coding advantage of the proposed code for a codeword pair corresponding to any distinct input pair is shown to be greater than or equal to that of the ST-CR code.     

A Power Control MAC Protocol for Ad Hoc Networks

This paper presents a power control MAC protocol that allows nodes to vary transmit power level on a per-packet basis. Several researchers have proposed simple modifications of IEEE 802.11 to incorporate power control. The main idea of these power control schemes is to use different power levels for RTS–CTS and DATA–ACK. Specifically, maximum transmit power is used for RTS–CTS, and the minimum required transmit power is used for DATA–ACK transmissions in order to save energy. However, we show that these schemes can degrade network throughput and can result in higher energy consumption than when using IEEE 802.11 without power control. We propose a power control protocol which does not degrade throughput and yields energy saving.     

Low‐Temperature Growth of SiO2 Films by Plasma‐Enhanced Atomic Layer Deposition

Silicon dioxide (SiO₂) films prepared by plasma‐enhanced atomic‐layer deposition were successfully grown at temperatures of 100 to 250 °C, showing self‐limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO₂ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO₂ film grown at 250 °C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.     

Analysis of Failure Mechanism in Anisotropic Conductive and Non-Conductive Film Interconnections

Failure behaviors of anisotropic conductive film (ACF) and non-conductive film (NCF) interconnects were investigated by measuring the connection resistance. The four-point probe method was used to measure the connection resistance of the adhesive joints constructed with Au bump on Si chip and Cu pad on flexible printed circuit. The interconnection reliability was evaluated by multiple reflow process. The connection resistance of the ACF joints was markedly higher than that of NCF joints, mainly due to the constriction of the current flow and the intrinsic resistance of the conductive particles in ACF joints. The connection resistances of both interconnections decreased with increasing bonding force, and subsequently converged to about 10 and 1 mOmega at a bonding force of 70 and 80 N, for the ACF and NCF joints, respectively. During the reflow process, two different conduction behaviors were observed: increased connection resistance and the termination of Ohmic behavior. The former was due to the decreased contact area caused by z-directional swelling of the adhesives, whereas the latter was caused by either contact opening in the adhesive joints or interface cracking.     

Surface Chemistry of Vitamin: Pyridoxal 5′‐Phosphate (Vitamin B6) as a Multifunctional Compound for Surface Functionalization

Vitamins are non‐toxic compounds that perform a variety of biological functions and also available in a large quantity. Other than the usage as food supplements, few attempts have been made to use them as functional materials. In this study, we report that vitamin B6, pyridoxal 5′‐phosphate (PLP), is a multi‐functional molecule for oxide surface chemistry. PLP‐immobilized surfaces exhibit superhydrophilicity and even hemophilicity, enhancing proliferation, migration, and differentiation of mammalian cells. Unlike existing molecules used so far in surface modification, PLP has an intrinsic chemical reactivity toward biomacromolecules due to the presence of the aldehyde group. In fact, RGD peptide is covalently tethered onto PLP surfaces directly in one step without any chemical activation. Furthermore, PLP‐functionalized implant device showed rapid bone healing. As vitamin B6 is a FDA approved molecule for human usage, the surface chemistry of vitamin B6 potentially allows a fast route for surface functionalized medical devices into clinic.     

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

In this letter, we studied the effects of post-deposition anneal (PDA) time and Si interface control layer (ICL) on the electrical characteristics of the MOS capacitor with high-/spl kappa/ (HfO/sub 2/) material on GaAs. Thin equivalent oxide thickness (EOT<3 nm) with excellent capacitance-voltage (C-V) characteristics has been obtained. The thickness of the Si ICL and PDA time were correlated with C-V characteristics. It was found that high temperature Si ICL deposition and longer PDA time at 600/spl deg/C improved the C-V shape, leakage current, and especially frequency dispersion (<5%).     

Microstructure coarsening during static annealing of 60Sn40Pb solder joints: II eutectic coarsening kinetics

The eutectic coarsening kinetics for 60Sn40Pb solder joints annealed at 50°C to 150° C was determined to be of the form

Ultrafast Responsive Non‐Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film

The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns^?1, high charge transfer efficiency of 89%, ON/OFF current ratio of 10⁴, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi.