Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

ECG measurement on a chair without conductive contact

For the purpose of long-term, everyday electrocardiogram (ECG) monitoring, we present a convenient method of ECG measurement without direct conductive contact with the skin while subjects sat on a chair wearing normal clothes. Measurements were made using electrodes attached to the back of a chair, high-input-impedance amplifiers mounted on the electrodes, and a large ground-plane placed on the chair seat. ECGs were obtained by the presented method for several types of clothing and compared to ECGs obtained from conventional measurement using Ag-AgCl electrodes. Motion artifacts caused by usual desk works were investigated. This study shows the feasibility of the method for long-term, convenient, everyday use.     

Matrix substitution method for power bus analysis with isolated power island in high-speed packages and PCBs

We propose a matrix substitution method for analyzing a power bus containing a power island in high-speed packages and printed circuit boards (PCBs). The method is based on a segmentation method and a resonant cavity model for a rectangular cavity, and the impedance of the power bus containing the power island can be calculated analytically. Finally, the proposed method is verified by means of impedance measurements in the frequency domain.     

Designing training sequences for carrier frequency estimation in frequency-selective channels

A procedure for selecting a training sequence (TS) is developed for frequency estimation in frequency-selective channels. An expression for the unconditional Crame/spl acute/r-Rao bound (UCRB) is obtained by averaging the CRB for frequency estimation over the probability density function of Gaussian random channels. In addition, a necessary and sufficient condition for minimizing the UCRB is derived. Based on these results, a procedure for selecting a TS is developed. Through a computer search, binary TSs up to length 24 are found and tabulated. It is observed that periodic TSs tend to be selected when the TS length is twice the channel duration. Simulation results demonstrate that the proposed TSs can enhance the performance of the maximum likelihood (ML) frequency estimate.     

Low-power high-slew-rate CMOS buffer amplifier for flat panel display drivers

A new high-slew-rate CMOS buffer amplifier consuming a very small quiescent current is proposed. This buffer amplifier recursively copies the output driving current and increases the tail current of the input differential pair during slewing. Since the proposed buffer has a possible slew rate higher than 10 V//spl mu/s for a load capacitance of 1 nF almost independently of static currents as low as 1 /spl mu/A, this buffer amplifier is promising for column driver ICs of flat panel displays that require low static power consumption, high current driving capabilities, and small silicon areas.     

A 13-dB IIP3 improved low-power CMOS RF programmable gain amplifier using differential circuit transconductance linearization for various terrestrial mobile D-TV applications

A CMOS RF digitally programmable gain amplifier (RF PGA), covering various terrestrial mobile digital TV standards (DMB, ISDB-T, and DVB-H) is implemented as a part of a low-IF tuner IC using 0.18-/spl mu/m CMOS technology. An improvement of 13-dB IIP3 is attained without significant degradation of other performance criteria like gain, noise figure, common-mode rejection ratio, etc., at similar power consumption. This is achieved by applying a newly proposed differential circuit gm" (the second derivatives of transconductance) cancellation technique, called the differential multiple gated transistor (DMGTR). In the DMGTR amplifier, the negative value of gm" in the fully differential amplifier can be compensated by the positive value of gm" in the pseudo differential amplifier which is properly sized and biased. By adopting the DMGTR, a low-power highly linear RF PGA is implemented. Also, in order to have wide gain range with fine step resolution, a new RF PGA architecture is proposed. The measurement results of the proposed RF PGA exhibit 50-dB gain range with 0.25-dB resolution, 4.5-dB noise figure, a -4-dBm IIP3 (maximum 30 dBm) and 25-dB gain at 16-mW power consumption.     

A novel way to improve the dispersion-limited transmission distance of electroabsorption modulated lasers

We propose and demonstrate a way to improve the dispersion-limited reach of electroabsorption modulated lasers (EMLs). We generate continuous-phase frequency-shift keying/amplitude-shift keying (ASK) signals with the EML by applying a small current modulation to the laser diode (LD) on top of electroabsorption-modulated ASK signals. The amount of frequency deviation induced by the current modulation is adjusted to have the EML output signals experience /spl pi/ phase shift at every space. The experimental demonstration shows that with the proposed scheme we can increase the dispersion-limited transmission distance of the EML-based transmitter by 25%-75%, and it can be further improved by employing an LD with flat frequency-modulation response.     

Metal-defined polymeric variable optical attenuator

A variable optical attenuator (VOA) based on a metal-defined polymeric optical waveguide has been demonstrated for the first time. The metal film stressor deposited on top of the upper cladding layer not only produces the refractive index change within the core layer, but also acts as a thin-film heater allowing thermal tuning of the optical power within a metal-defined optical waveguide. Fabricated devices exhibit greater than 25 dB of optical attenuation with an applied electrical current of /spl sim/40 mA at 1550-nm wavelength. The switching speed of the VOA exhibits 800 /spl mu/s of rising and 720 /spl mu/s of falling time.     

A 60-GHz point-to-multipoint millimeter-wave fiber-radio communication system

A 60-GHz point-to-multipoint wireless access link with data rate of 156 Mb/s incorporating 60-GHz transceiver modules and full-duplex fiber-optic millimeter-wave transmission is developed for short-range applications such as indoor wireless local area networks and intelligent transport systems. For compact system configuration, a small-size millimeter-wave transceiver module with planar antennas is developed. The transceiver module is based on broadband planar integration and packaging of millimeter-wave circuits. The RF output power is +10 dBm and the measured 3-dB antenna beamwidth is 30/spl deg/. The total size of the developed 60-GHz transceiver module, except input and output connectors, is 50 mm /spl times/ 75 mm /spl times/ 35 mm. A point-to-point full duplex fiber-optic configuration is extended to the scheme with multiple access points (APs) by using a tree coupler and a dense wavelength division multiplexing multiplexer. The AP has a simple configuration without frequency conversion. The bit error rate and packet error rate performances of the 60-GHz fiber-radio access link are evaluated. Furthermore, the effect of the extension to the scheme with multiple APs is investigated.