Interdiffusivities matrix of CaO-Al2O3-SiO2 melt at 1723 K to 1823 K

Ternary oxide mixtures of lime, alumina, and silica were premelted and quenched to produce glassy cylinders. A diffusion couple was selected from the mixtures of six different compositions in such a way that the average composition could be 40 wt pct CaO-20 wt pct A1₂O₃ = 40 wt pct SiO₂. Penetration curves of the components were measured with a X-ray microprobe analyzer. The interdiffusivities matrix defined with the Matano interface has been obtained from 52 successful diffusion runs at 1723 K to 1823 K as follows; 1 $$\begin{gathered} \tilde D_{10 - 10}^{30} = 8.9 \times 10^{ - 11} \exp ( - \frac{{253,700}}{{RT}})(m^2 /s) \hfill \\ \tilde D_{10 - 20}^{30} = - 2.5 \times 10^{ - 11} \exp ( - \frac{{194,300}}{{RT}})(m^2 /s) \hfill \\ \end{gathered} $$ 2 $$\begin{gathered} \tilde D_{20 - 10}^{30} = - 4.0 \times 10^{ - 11} \exp ( - \frac{{177,600}}{{RT}})(m^2 /s) \hfill \\ \tilde D_{20 - 20}^{30} = 6.12 \times 10^{ - 11} \exp ( - \frac{{318,400}}{{RT}})(m^2 /s) \hfill \\ \end{gathered} $$ where symbols, 10, 20, and 30 mean CaO, A1₂O₃, and SiO₂, respectively, and the activation energies are in Joules per mole. The diffusion composition paths obtained are discussed in relation to Cooper’s parallelogram. The composition dependency of the above interdiffusivities is estimated from the quasibinary interdiffusivities in all composition ranges of the present oxide system in liquid state.     

Generation of pedestal-free 22-fs ultrashort pulse using highly nonlinear fiber and reverse-dispersion fiber

We present an all-fiber system for generating pedestal-free 22-fs ultrashort pulses with a single-peak spectrum. High-power Raman soliton pulses and a normally dispersive highly nonlinear fiber are used to generate a smooth, broadened single-peak spectrum. Then, the higher order dispersion is compensated for using a hybrid fiber composed of a reverse-dispersion fiber and a standard single-mode fiber, which allows pedestal-free ultrashort pulses to be successfully generated. To our knowledge, this is the first demonstration of pedestal-free 20-fs-class ultrashort pulse generation without spectral distortion using an all-fiber configuration.     

Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy

GaAs quantum wires (100*20 nm/sup 2/) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As/sub 4/ pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned     

Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature

A comparative study has been carried out regarding selective embedding growth of InP by metalorganic chemical vapor deposition (MOCVD) around dry-etched mesas, using two types of reactors: a conventional horizontal type and a highspeed rotating-susceptor type. In the case of the conventional horizontal-type MOCVD, overgrowth on the mask was observed when the growth temperature was low (600°C). On the other hand, an almost planar grown surface without such overgrowth was achieved by using the high-speed rotating-susceptor MOCVD for a wide range of growth temperatures, especially even at a low growth temperature of 580°C. Regarding the high-speed rotating-susceptor MOCVD, we have also investigated the effects of dopants on the growth behaviors and have found a remarkable difference between n-type S-doped and p-type Zn-doped InP in the growth behaviors. The mechanism for suppressing overgrowth in case of the high-speed rotating-susceptor MOCVD, as well as the cause for the different effects between the dopants, are discussed.     

Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

High-mobility strained-Si PMOSFET's

Operation and fabrication of a new high channel mobility strained-Si PMOSFET are presented. The growth of high-quality strained Si layer on completely relaxed, step-graded, SiGe buffer layer is demonstrated by gas source MBE. The strained-Si layer is characterized by double crystal X-ray diffraction, photoluminescence, and transmission electron microscopy. The operation of a PMOSFET is shown by device simulation and experiment. The high-mobility strained-Si PMOSFET is fabricated on strained-Si, which is grown epitaxially on a completely relaxed step-graded Si_0.82Ge_0.18 buffer layer on Si(100) substrate. At high vertical fields (high |V_g|), the channel mobility of the strained-Si device is found to be 40% and 200% higher at 300 K and 77 K, respectively, compared to those of the bulk Si device. In the case of the strained-Si device, degradation of channel mobility due to Si/SiO₂ interface scattering is found to be more pronounced compared to that of the bulk Si device. Carrier confinement at the type-II strained-Si/SiGe-buffer interface is clearly demonstrated from device transconductance and C-V measurements at 300 K and 77 K     

An analysis of a waveguide T junction with an inductive post

The authors analyze the T junction with an inductive post, taking its diameter into account for the case where the current distribution is assumed on the surface of the post. A single cylindrical post placed in a T junction improves the impedance matching and compensates the junction discontinuity in a wide frequency band. The effects of the design parameters, such as the diameter of the post and its location, are clarified. The measured return loss is accurately predicted. On the basis of this analysis, an effective design procedure for the T junction is proposed, and the reflection below -30 dB is realized over 4% bandwidth