Microstructure Development and Dielectric Properties of Potassium Strontium Niobate Ceramics

Sintering of a KSr₂Nb₅O₁₅ powder compact at 1350°C resulted in a duplex structure. Prefiring of the compact between 1200° and 1300°C inhibited the abnormal grain growth responsible for the duplex structure. The Curie temperature and dielectric constant were dependent on the microstructure.     

Parasitic effects and long term stability of InP-based HEMTs

A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, g_m(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, g_m(f) dispersion).     

Numerical simulation of ultra-compact electro-optic modulator based on nanoscale plasmon metal gap waveguides

An ultra-compact Mach-Zehnder (MZ) electro-optic (EO) modulator composed of nanoscale metal gap waveguides is numerically demonstrated. Propagation of surface plasmon polaritons in nano-size channels and their EO modulations is investigated by the finite-difference time-domain method considering the Lorentz-Drude model. The half-wave voltage (V _pi) of the resulting MZ modulator for push-pull operation is 1.73 V using the interference arm with a sub-micron length (500-nm).     

A Fast and Accurate Method of Redesigning Analog Subcircuits for Technology Scaling

In this paper, we present an efficient approach for technology scaling of MOS analog circuits by using circuit optimization techniques. Our new method is based on matching equivalent circuit parameters between a previously designed circuit and the circuit undergoing redesign. This method has been applied to a MOS operational amplifier. We were able to produce a redesigned circuit with almost the same performance in under 4 h, making this method 5 times more efficient than conventional methods.     

Partial scan design and test sequence generation based on reduced scan shift method

This paper presents a partial scan algorithm, calledPARES (PartialscanAlgorithm based onREduced Scan shift), for designing partial scan circuits. PARES is based on the reduced scan shift that has been previously proposed for generating short test sequences for full scan circuits. In the reduced scan shift method, one determines proch FFs must be controlled and observed for each test vector. According to the results of similar analysis, PARES selects these FFs that must be controlled or observed for a large number of test vectors, as scanned FFs. Short test sequences are generated by reducing scan shift operations using a static test compaction method. To minimize the loss of fault coverage, the order of test vectors is so determined that the unscanned FFs are in the state required by the next test vector. If there are any faults undetected yet by a test sequence derived from the test vectors, then PARES uses a sequential circuit test generator to detect the faults. Experimental results for ISCAS'89 benchmark circuits are given to demonstrate the effectiveness of PARES.     

Comments on “The electromagnetic field of a vertical electricdipole over the Earth or sea” [and reply]

Yokoyama makes some comments on the “numerical distance” contained in the surface wave term in the paper by King and Sandler (see ibid., vol.42, p.383, 1994) comparing it with the one obtained by former authors. He comments on the parameter P in the Fresnel-integral term in the paper. Yokoyama concludes that for the calculation of such a problem in a semi-sphere, the spherical polar coordinate system is preferable to the cylindrical coordinate system including the case of lateral waves. King and Sandler reply to the Comment     

Removal of Interlayer Water of two Ti3C2Tx MXenes as a Versatile Tool for Controlling the Fermi-Level Pinning-Free Schottky Diodes with Nb:SrTiO3

Striving for the sixth-generation communication technology discovery, semiconductors beyond Si with wider bandgaps as well as non-conventional metals are actively being sought to achieve high speeds whilst maintaining devices miniaturization. 2D materials may provide the potential for downsizing, but their functional advantage over existing counterparts still longs to be discovered. Along that path, surface-adsorbed or bulk-intercalated water molecules remaining after wet-chemical synthesis of 2D materials are generally seen as obstacles to high-performance achievement. Herein, the control of such water within the interlayers of solution-processed metallic 2D titanium carbide (MXene) by vacuum annealing duration is demonstrated. Moreover, the impact of water removal on work function (WF) and functional terminations is unveiled for the first time. Furthermore, the usefulness of such water for controlling a novel Schottky diode in contact with an n-type oxide semiconductor, niobium-doped strontium titanate (Nb:SrTiO₃) is observed. The advantage of MXene compared to conventional gold as facile processing, WF tunability, and lower turn-on voltage in the Schottky anode application is highlighted. This fundamental study shows the way for a novel Schottky diode preparation in atmospheric conditions and provides implications for further research directions aiming at commercialization.     

SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of >40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts     

Real-time 3-D model-based navigation system for endoscopicparanasal sinus surgery

This paper presents a three-dimensional (3-D)-model-based navigation system for endoscopic sinus surgery treating paranasal sinusitis. Endoscopic surgery is becoming more common because of its low invasiveness. Its problem with disorientation, however, is one of the toughest barriers for the novice and may lead even an expert to commit serious surgical errors, e.g., causing cerebrospinal fluid (CSF) leakage or blinding the patient. To prevent such complications and optimize training, the authors' system aids in navigation by showing a single perspective view of the patient and the endoscope models. This virtual endoscope has a viewing cone with a simulated light to indicate the viewing direction and visual field in real-time. The system's three clipping planes automatically follow the endoscope and help keep the surgeon aware of the endoscope's actual position. An experiment comparing the system to conventional navigation using a triplanar display showed that the perspective view was referenced very frequently, giving a positive impressions, while the triplanar display was almost completely ignored, apparently because it was too difficult to interpret immediately     

Wavelength-independent operation of EA-modulator integratedwavelengthselectable microarray light sources

In this letter, we have simultaneously fabricated five wavelength-selectable microarray light sources (WSLs), each having a different wavelength range integrated with an electroabsorption (EA) modulator on a single wafer. We also introduced a novel device configuration scheme for wavelength-independent modulation. The five EA-WSLs fully covered the entire C-band and had a low uniform threshold current of 6 ± 1 mA at 25°C. Wavelength-independent extinction characteristics were obtained over a tuning wavelength range of 8 nm, and 2.5-Gb/s transmission over 600 km was successfully achieved