Effective Periodic Poling in Optical Fibers

The distributions of electric field and induced second‐order nonlinearity are analyzed in the periodic poling of optical fibers. A quasi‐phase matching efficiency for the induced nonlinearity is calculated in terms of both the electrode separation distance between the applied voltage and generalized electrode width for the periodic poling. Our analysis of the quasi‐phase matching efficiency implies that the conversion efficiency can be enhanced through adjusting the separation distance, and the electrode width can be maximized if the electrode width is optimized.     

Optoelectronic and microwave transmission characteristics of indium solder bumps for low-temperature flip-chip applications

This paper describes low-temperature flip-chip bonding for both optical interconnect and microwave applications. Vertical-cavity surface-emitting laser (VCSEL) arrays were flip-chip bonded onto a fused silica substrate to investigate the optoelectronic characteristics. To achieve low-temperature flip-chip bonding, indium solder bumps were used, which had a low melting temperature of 156.7/spl deg/C. The current-voltage (I-V) and light-current (L-I) characteristics of the flip-chip bonded VCSEL arrays were improved by Ag coating on the indium bump. The I-V and L-I curves indicate that optical and electrical performances of Ag-coated indium bumps are superior to those of uncoated indium solder bumps. The microwave characteristics of the solder bumps were investigated by using a flip-chip-bonded coplanar waveguide (CPW) structure and by measuring the scattering parameter with an on-wafer probe station for the frequency range up to 40 GHz. The indium solder bumps, either with or without the Ag coating, provided good microwave characteristics and retained the original characteristic of the CPW signal lines without degradation of the insertion and return losses by the solder bumps.     

Spectrum‐Based Color Reproduction Algorithm for Makeup Simulation of 3D Facial Avatar

Various simulation applications for hair, clothing, and makeup of a 3D avatar can provide more useful information to users before they select a hairstyle, clothes, or cosmetics. To enhance their reality, the shapes, textures, and colors of the avatars should be similar to those found in the real world. For a more realistic 3D avatar color reproduction, this paper proposes a spectrum‐based color reproduction algorithm and color management process with respect to the implementation of the algorithm. First, a makeup color reproduction model is estimated by analyzing the measured spectral reflectance of the skin samples before and after applying the makeup. To implement the model for a makeup simulation system, the color management process controls all color information of the 3D facial avatar during the 3D scanning, modeling, and rendering stages. During 3D scanning with a multicamera system, spectrum‐based camera calibration and characterization are performed to estimate the spectrum data. During the virtual makeup process, the spectrum data of the 3D facial avatar is modified based on the makeup color reproduction model. Finally, during 3D rendering, the estimated spectrum is converted into RGB data through gamut mapping and display characterization.     

White Electrofluorescence Switching from Electrochemically Convertible Yellow Fluorescent Dyad

A fluorescent naphthalimide‐tetrazine dyad (NITZ) was examined for electrofluorochromism. The reversible electrochemistry of the tetrazine was accompanied by the fluorescence change through a quasi‐complete energy transfer in an electrochemical cell prepared by the mixture of polymer electrolyte and naphthalimide‐tetrazine dyad. Owing to the energy transfer within the dyad (naphthalimide and tetrazine), the fluorescence efficiency of NITZ was much enhanced and the effective fluorophore concentration in this system was much less than other tetrazine based electrofluorochromic device (EFD). Thus the yellow fluorescence of NITZ was switched on and off remarkably even with small quantity of NITZ (1 wt.%) in an EFD upon application of step potentials for different redox state. Furthermore, multi‐color fluorescence switching was achieved by blending a naphthalimide to the electrofluorochromic layer, to show white‐blue‐dark state of fluorescence. Since the tetrazine and naphthalimide units have their emission quenched at different potentials, the emission color could be tuned by quenching emission at selected wavelengths, reversibly, under low working potentials.     

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

Controlling the interfacial properties between the electrode and active layer in organic field‐effect transistors (OFETs) can significantly affect their contact properties, resulting in improvements in device performance. However, it is difficult to apply to top‐contact‐structured OFETs (one of the most useful device structures) because of serious damage to the organic active layer by exposing solvent. Here, a spontaneously controlled approach is explored for optimizing the interface between the top‐contacted source/drain electrode and the polymer active layer to improve the contact resistance (R_C). To achieve this goal, a small amount of interface‐functionalizing species is blended with the p‐type polymer semiconductor and functionalized at the interface region at once through a thermal process. The R_C values dramatically decrease after introduction of the interfacial functionalization to 15.9 kΩ cm, compared to the 113.4 kΩ cm for the pristine case. In addition, the average field‐effect mobilities of the OFET devices increase more than three times, to a maximum value of 0.25 cm² V^?1 s^?1 compared to the pristine case (0.041 cm² V^?1 s^?1), and the threshold voltages also converge to zero. This study overcomes all the shortcomings observed in the existing results related to controlling the interface of top‐contact OFETs by solving the discomfort of the interface optimization process.     

Correlation analysis between pattern and non-pattern wafer for characterization of shallow trench isolation–chemical–mechanical polishing (STI–CMP) process

This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, the removal properties of plasma enhanced tetra-ethyl ortho-silicate (PETEOS) blanket wafers was investigated, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the amount of oxide removal by blanket and patterned wafers. We analyzed this relationship, and the post-CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafers (correlation factor: 0.7109). So, we could confirm the repeatability as applying to STI CMP process from the linear formula obtained.     

Ultra-wideband (from DC to 110 GHz) CPW to CPS transition

A new ultra-wideband, low-loss and small-size coplanar waveguide (CPW) to coplanar strip (CPS) transition which can be used from DC to 110 GHz is presented. The proposed transition connects CPW with CPS by the reformed air-bridge. Two ground planes of CPW are tied at their ends by a line and the centre of the line is connected to the ground strip of CPS by another line. Owing to the symmetry of the proposed structure, the currents of two ground planes of CPW are combined with the same phase and transferred to the ground strip of CPS. With height of 3 μm, the signal line of CPW passes over two connecting lines and is connected to the signal strip of CPS. For the back-to-back transition structure, insertion loss <1 dB and return loss >15 dB are obtained from 0.5 to 110 GHz     

Analyzing the Next Generation Software Defined Radio for Future Architectures

Commercial and research work in the field of software defined radio (SDR) has produced designs which have been able to deliver the efficiency and computational power needed to process 3G wireless technologies. Though efficient 3G processing has been achieved by these designs, next generation 4G SDR technology requires 10–1000x more computational performance but limits the power budget increase to 2–5x. In this paper, we present a breakdown of the major 4G kernels and analyze two methods of increasing performance and reducing power consumption. Specifically, we consider the effect of SIMD width and reduction in number of register file accesses on the performance and energy consumption of a SDR architecture, SODA. We show that by increasing SIMD width we can gain almost 2–8x performance increase while increasing total energy used by 1–2x for different SIMD widths. We also show that by reducing SIMD register accesses we can reduce the total energy used by 5–20% for the 4G kernels.     

Joint spectrum sensing and resource allocation optimization using genetic algorithm for frequency hopping–based cognitive radio networks

In cognitive radio (CR) networks, secondary users should effectively use unused licensed spectrums, unless they cause any harmful interference to the primary users. Therefore, spectrum sensing and channel resource allocation are the 2 main functionalities of CR networks, which play important roles in the performance of a CR system. To maximize the CR system utility, we propose a joint out‐of‐band spectrum sensing and operating channel allocation scheme based on genetic algorithm for frequency hopping–based CR networks. In this paper, to effectively sense the primary signal on hopping channels at each hopping slot time, a set of member nodes sense the next hopping channel, which is called out‐of‐band sensing. To achieve collision‐free cooperative sensing reporting, the next channel detection notification mechanism is presented. Using genetic algorithm, the optimum sensing and data transmission schedules are derived. It selects a sensing node set that participate the spectrum sensing for the next expected hopping channel during the current channel hopping time and another set of nodes that take opportunity for transmitting data on the current hopping channel. The optimum channel allocation is performed in accordance with each node's individual traffic demand. Simulation results show that the proposed scheme can achieve reliable spectrum sensing and efficient channel allocation.