Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni₃Sn and Ni₃Sn₂) and Ni_5.63SnSe₂] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10^?4 Ω cm²) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.     

Unveiled Ferroelectricity in Well-Known Non-Ferroelectric Materials and Their Semiconductor Applications

Ferroelectric materials are considered ideal for emerging memory devices owing to their characteristic remanent polarization, which can be switched by applying a sufficient electric field. However, even several decades after the initial conceptualization of ferroelectric memory, its applications are limited to a niche market. The slow advancement of ferroelectric memories can be attributed to several extant issues, such as the absence of ferroelectric materials with complementary metal–oxide–semiconductor (CMOS) compatibility and scalability. Since the 2010s, ferroelectric memories have attracted increasing interest because of newly discovered ferroelectricity in well-established CMOS-compatible materials, which are previously known to be non-ferroelectric, such as fluorite-structured (Hf,Zr)O₂ and wurtzite-structured (Al,Sc)N. With advancing material fabrication technologies, for example, accurate chemical doping and atomic-level thickness control, a metastable polar phase, and switchable polarization with a reasonable electric field can be induced in (Hf,Zr)O₂ and (Al,Sc)N. Nonetheless, various issues still exist that urgently require solutions to facilitate the use of the ferroelectric (Hf,Zr)O₂ and (Al,Sc)N in emerging memory devices. Thus, ferroelectric (Hf,Zr)O₂ and (Al,Sc)N are comprehensively reviewed herein, including their fundamental science and practical applications.     

A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy

Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metalorganic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2?nm, corresponding to the calculated spacing of a misfit dislocation (2.6?nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.     

BIST/Digital-Compatible Testing of RF Devices Using Distortion Model Fitting

Testing of Radio Frequency (RF) circuits for nonlinearity specifications generally requires the use of multiple test measurements thereby contributing to increased test cost. Prior RF test methods have suffered from significant test calibration effort (training for supervised learners) when using compact tests or from increased test time due to direct specification measurement. On the other hand, due to aggressive technology scaling, there are plenty of digital transistors available that can be used to simplify testing of Analog/Mixed-Signal (AMS) and RF devices. In this paper, an RF test methodology is developed that: (a) allows RF devices to be tested for several distortion specifications using distortion model fitting algorithms in test time comparable to what can be achieved using supervised learning techniques while retaining the accuracy of direct specification measurement, (b) allows multiple RF specifications to be determined concurrently from a single data acquisition and (c) allows digital-compatible testing/BIST to be performed using digital testers or on-chip built in self-test (BIST) circuitry. With regard to (a), a key benefit is that no training of supervised learning algorithm is necessary. The proposed method based on distortion model fitting is shown to give excellent results across common RF performance metrics while providing ~10× improvements in test time compared to previous methods.     

Mobile Robot Navigation Using Wireless Sensor Networks Without Localization Procedure

In this paper, algorithms for navigating a mobile robot through wireless sensor networks are presented. The mobile robot can navigate without the need for a map, compass, or GPS module while interacting with neighboring sensor nodes. Two navigation algorithms are proposed in this paper: the first uses the distance between the mobile robot and each sensor node and the second uses the metric calculated from one-hop neighbors’ hop-counts. Periodically measuring the distance or metric, the mobile robot can move toward a point where these values become smaller and finally come to reach the destination. These algorithms do not attempt to localize the mobile robot for navigation, therefore our approach permits cost-effective robot navigation while overcoming the limitations of traditional navigation algorithms. Through a number of experiments and simulations, the performance of the two proposed algorithms is evaluated.     

Hierarchically Assembled Mesenchymal Stem Cell Spheroids Using Biomimicking Nanofilaments and Microstructured Scaffolds for Vascularized Adipose Tissue Engineering

Composite multicellular spheroids composed of mesenchymal stem cells (MSCs) and synthetic biodegradable nanofilaments are fabricated. Extracellular‐matrix‐mimicking nanofilaments, prepared from transverse fragmentation of semicrystalline poly(L ‐lactic acid) nanofibers and subsequent surface modification with cell adhesive peptides, are used to form composite multicellular spheroids with MSCs by cellular self‐assembly. The size of the composite spheroids could be readily controlled with the integrated amount of the nanofilaments. The composite spheroids show enhanced adipogenic potential compared to homotypic spheroids. The resultant spheroids are used as building blocks for 3D biohybrid construction with the assistance of a microstructured scaffold fabricated by a direct polymer melt deposition process. An angiogenic growth factor, basic fibroblast growth factor, is also locally delivered in a sustained fashion from the heparinized scaffold surface for facile neovascularization of adipogenic tissue. The produced multiscaled and multifunctional hybrid MSC construct enable the successful formation of vascularized adipose tissue in vivo.     

Shorted Microstrip Patch Antenna Using Inductively Coupled Feed for UHF RFID Tag

A very small patch‐type RFID tag antenna (UHF band) using ceramic material mountable on metallic surfaces is presented. The size of the proposed tag is 25 mm×25 mm×3 mm. The impedance of the antenna can be easily matched to the tag chip impedance by adjusting the size of the shorting plate of the patch and the size of the feeding loop. The measured maximum reading distance of the tag at 910 MHz was 5 m when it was mounted on a 400 mm × 400 mm metallic surface. The proposed design is verified by simulation and measurements which show good agreement.     

Suppression of transient phenomena in hybrid Raman/EDF amplifier

Transient phenomena of hybrid Raman/erbium-doped fiber amplifier (EDFA) upon optical channel add-drop are investigated. The transient responses of surviving channels are resulted from the combined dynamics of Raman amplifier and EDFA. It is shown that the suggested method employing fast gain control of EDFA only can effectively suppress the transient variation of output power. The transient-suppressing hybrid Raman/EDFA is proven to be enough for wavelength-division-multiplexing networks including reconfigurable optical add-drop multiplexer and/or transparent optical cross-connect, if the optical switching speed is carefully chosen.     

A Multi‐Functional Highly Efficient Upconversion Luminescent Film with an Array of Dielectric Microbeads Decorated with Metal Nanoparticles

Upconversion nanoparticles (UCNPs) have been integrated with photonic platforms to overcome the intrinsically low quantum efficiency limit of upconversion luminescence (UCL). However, platforms based on thin films lack transferability and flexibility, which hinders their broader and more practical application. A plasmonic structure is developed that works as a multi‐functional platform for flexible, transparent, and washable near‐infrared (NIR)‐to‐visible UCL films with ultra‐strong UCL intensity. The platform consists of dielectric microbeads decorated with plasmonic metal nanoparticles on an insulator/metal substrate. Distinct improvements in NIR confinement, visible light extraction, and boosted plasmonic effects for upconversion are observed. With weak NIR excitation, the UCL intensity is higher by three orders of magnitude relative to the reference platform. When the microbeads are organized in a square lattice array, the functionality of the platform can be expanded to wearable and washable UCL films. The platform can be transferred to transparent, flexible, and foldable films and still emit strong UCL with a wide viewing angle.