Cu-Phosphorus Eutectic Solid Solution for Growth of Multilayer Graphene with Widely Tunable Doping

A one-step chemical vapor deposition (CVD) is proposed to grow multilayer graphene (MLG) with tunable doping types using a copper–phosphorus eutectic system as a catalyst. At the growth temperature, the phosphorus-dissolved copper forms a liquid phase, which promotes the formation of phosphorus-doped MLG. With this method, the thickness and doping level of graphene are simultaneously controlled at the synthesis stage. Moreover, the proposed CVD method enables patterned growth of MLG at the microscale. The resultant phosphorus-doped graphene demonstrates a tunable doping state from large n-type doping to p-type doping because of the high affinity of phosphorus to water molecules. Finally, stable n-type doping of MLG by passivating it with a parylene thin film is demonstrated.     

Hierarchical Metamaterials for Multispectral Camouflage of Infrared and Microwaves

Camouflage is an emerging application of metamaterials owing to their exotic electromagnetic radiative properties. Based on the use of a selective emitter and an absorber as the metamaterials, most reported articles have suggested the use of single‐band camouflage, however, multispectral camouflage is a challenging issue owing to a difference of several orders of magnitude in the unit cell structure. Herein, hierarchical metamaterials (HMMs) for multispectral signal control when dissipating the absorbed energy of microwaves through the selective emission of infrared (IR) waves from the unit cell structure of the HMM are demonstrated. Integrating an IR selective emitter (IRE) with a microwave selective absorber, multispectral signal control with the large‐sized unit cell structures of up to 10 cm are realized. With an IRE, the emissive power from the HMM toward 5–8 µm is 1570% higher than the Au surface, which is preventing the occurrence of thermal instability. Furthermore, we determine that the signature levels of targeted IR waves (8–12 µm) and microwaves (2.5–3.8 cm) are reduced by up to 95% and 99%, respectively, when applying the HMM.     

Intercell Interference Coordination Using Threshold-Based Region Decisions

IMT-Advanced mobile communication systems make it possible for any devices to access high-speed networks anytime and anywhere. To meet the needs of IMT-Advanced systems, cellular systems must solve the problem of intercell interference caused by frequency reuse. Intercell interference problems become severe when orthogonal frequency division multiplexing (OFDM) transmission, which is a key technology for 4G communication systems, is used in a cellular system. In this paper, a zone-based intercell interference coordination (ICIC) scheme with high flexibility and low cost is proposed, and its performance is evaluated through multicell system-level simulations carried out according to the simplified 3GPP (3rd Generation Partnership Project) Long Term Evolution (LTE) system parameters. In the proposed algorithm, each cell is divided into several regions based on threshold values. Each region reuses frequencies in different ways, and the regions have different maximum transmit (TX) powers according to the interference environment. Even though the proposed scheme can be implemented with low complexity by using only the existing user equipment (UE) measurement, simulation results have confirmed that it provides significant improvements in geometry distribution.     

Charge‐Generating Mode Control in High‐Performance Transparent Flexible Piezoelectric Nanogenerators

In this work, we demonstrate the mode transition of charge generation between direct‐current (DC) and alternating‐current (AC) from transparent flexible (TF) piezoelectric nanogenerators (NGs), which is dependent solely on the morphology of zinc oxide (ZnO) nanorods without any use of an AC/DC converter. Tilted ZnO nanorods grown on a relatively low‐density seed layer generate DC‐type piezoelectric charges under a pushing load, whereas vertically aligned ZnO nanorods on a relatively high‐density seed layer create AC‐type charge generation. The mechanism for the geometry‐induced mode transition is proposed and characterized. We also examine the output performance of TF‐NGs which employ an indium zinc tin oxide (IZTO) film as a TF electrode. It is demonstrated that an IZTO film has improved electrical, optical, and mechanical properties, in comparison with an indium tin oxide (ITO) film. Enhanced output charge generation is observed from IZTO‐based TF‐NGs when TF‐NGs composed of only ITO electrodes are compared. This is attributed to the higher Schottky barrier and the lower series resistance of the IZTO‐based TF‐NGs. Thus, by using IZTO, we can expect TF‐NGs with superior mechanical durability and power generating performance.     

Polymer‐Stabilized Chromonic Liquid‐Crystalline Polarizer

Robust coatable polarizer is fabricated by the self‐assembly of lyotropic chromonic liquid crystals and subsequent photo‐polymerizing processes. Their molecular packing structures and optical behaviors are investigated by the combined techniques of microscopy, scattering and spectroscopy. To stabilize the oriented Sunset Yellow FCF (H‐SY) films and to minimize the possible defects generated during and after the coating, acrylic acid (AA) is added to the H‐SY/H₂O solution and photo‐polymerized. Utilizing cross‐polarized optical microscopy, phase behaviors of the H‐SY/H₂O/AA solution are monitored by varying the compositions and temperatures of the solution. Based on the experimental results of two‐dimensional wide angle X‐ray diffraction and selected area electron diffraction, the H‐SY crystalline unit cell is determined to be a monoclinic structure with the dimensions of a = 1.70 nm, b = 1.78 nm, c = 0.68 nm, α = β = 90.0° and γ = 84.5°. The molecular arrangements in the oriented H‐SY films were further confirmed by polarized Fourier‐transform infrared spectroscopy. The polymer‐stabilized H‐SY films show good mechanical and chemical stabilities with a high polarizability. Additionally, patterned polarizers are fabricated by applying a photo‐mask during the photo‐polymerization of AA, which may open new doors for practical applications in electro‐optic devices.     

Optimized Hash Tree for Authentication in Sensor Networks

Authentication based on the Merkle tree has been proposed as an energy efficient approach in a resource constrained sensor network environment. It replaces complicated certificate verification with more power efficient hash computations. While previous works assumed complete binary Merkle tree structures, which can be used efficiently only in sensor networks with a specific number of sensor nodes, we investigate incomplete Merkle trees to support any number of sensors. For the incomplete Merkle tree, we demonstrate that an optimal structure can be found through mathematical analysis and simulation. A novel tree indexing scheme is also proposed to reduce communication overhead and save sensors resources during authentication     

Controlled assembly of single SWNTs bundle using dielectrophoresis

We present a mass productive and reproducible assembly technique of a single bundle of single-walled carbon nanotubes (sb-SWNTs) using dielectrophoresis (DEP). Gold electrodes with 10 gaps made via microlithography were used to align the carbon nanotubes (CNTs). The magnitude and type of applied electric field were investigated to verify their effects on CNT assembly. The optimum assembling conditions in which sb-SWNTs could be positioned at a desired site were experimentally identified, and the characteristics of the assembled sb-SWNTs were evaluated from AFM, Raman spectroscopy, and I-V curve. This assembly method has potential for applications, such as gas sensors or electronic devices.     

Consideration of chiral optical fibres

Circular birefringence is a property of chiral materials. In this work, we consider the use of chiral materials in optical fibres to produce circularly birefringent optical fibres and in fibres where a contrast in circular birefringence contributes to forming the waveguide. (-)-menthyl methacrylate is also investigated as a possible material for the fabrication of such fibres.     

40 GHz Vertical Transition with a Dual‐Mode Cavity for a Low‐Temperature Co‐fired Ceramic Transceiver Module

A new vertical transition between a substrate integrated waveguide in a low‐temperature co‐fired ceramic substrate and an air‐filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air‐filled waveguide. Physical characteristics of an air‐filled WR‐22 to WR‐22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a ?1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back‐to‐back module. A 40 GHz low‐temperature co‐fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm × 28 mm × 3.3 mm.     

Poly(diketopyrrolopyrrole‐benzothiadiazole) with Ambipolarity Approaching 100% Equivalency

As a characteristic feature of conventional conjugated polymers, it has been generally agreed that conjugated polymers exhibit either high hole transport property (p‐type) or high electron transport property (n‐type). Although ambipolar properties have been demonstrated from specially designed conjugated polymers, only a few examples have exhibited ambipolar transport properties under limited conditions. Furthermore, there is, as yet, no example with ‘equivalent’ hole and electron transport properties. We describe the realization of an equivalent ambipolar organic field‐effect transistor (FET) by using a single‐component visible–near infrared absorbing diketopyrrolopyrrole (DPP)‐benzothiadiazole (BTZ) copolymer, namely poly[3,6‐dithiene‐2‐yl‐2,5‐di(2‐decyltetradecyl)‐pyrrolo[3,4‐c]pyrrole‐1,4‐dione‐5’,5’’‐diyl‐alt‐benzo‐2,1, 3‐thiadiazol‐4,7‐diyl] ( PDTDPP‐alt‐BTZ ). PDTDPP‐alt‐BTZ shows not only ideally balanced charge carrier mobilities for both electrons (?_e = 0.09 cm²V^?1s^?1) and holes (?_h = 0.1 cm²V^?1s^?1) but also its inverter constructed with the combination of two identical ambipolar FETs exhibits a gain of ～35 that is much higher than usually obtained values for unipolar logic.