Proposal for an Inundation Hazard Index of Road Links for Safer Routing Services in Car Navigation Systems

Inundation of roads by heavy rainfall has attracted more attention than traffic accidents, traffic congestion, and construction because it simultaneously causes travel delays and threatens driver safety. For these reasons, in this paper, we propose an inundation hazard index (IHI) of road links, which shows the possibility of inundation of road links caused by rainfall. To generate the index, we have used two key data sources, namely the digital elevation model (DEM) and past rainfall records of when inundation has occurred. IHI is derived by statistically analyzing the relationships between the normalized relative height of the road links calculated from DEM within the watershed and past rainfall records. After analyzing the practical applicability of the proposed index with a commercial car navigation system through a set of tests, we confirmed that the proposed IHI could be implemented to choose safer routes, with reduced chances of encountering roads having inundation risks.s     

Design of 24 GHz Radar with Subspace‐Based Digital Beam Forming for ACC Stop‐and‐Go System

For an adaptive cruise control (ACC) stop‐and‐go system in automotive applications, three radar sensors are needed because two 24 GHz short range radars are used for object detection in an adjacent lane, and one 77 GHz long‐range radar is used for object detection in the center lane. In this letter, we propose a single sensor‐based 24 GHz radar with a detection capability of up to 150 m and ±30° for an ACC stop‐and‐go system. The developed radar is highly integrated with a high gain patch antenna, four channel receivers with GaAs RF ICs, and back‐end processing board with subspace based digital beam forming algorithm.     

Noun Sense Identification of Korean Nominal Compounds Based on Sentential Form Recovery

In a machine translation system, word sense disambiguation has an essential role in the proper translation of words when the target word can be translated differently depending on the context. Previous research on sense identification has mostly focused on adjacent words as context information. Therefore, in the case of nominal compounds, sense tagging of unit nouns mainly depended on other nouns surrounding the target word. In this paper, we present a practical method for the sense tagging of Korean unit nouns in a nominal compound. To overcome the weakness of traditional methods regarding the data sparseness problem, the proposed method adopts complement‐predicate relation knowledge that was constructed for machine translation systems. Our method is based on a sentential form recovery technique, which recognizes grammatical relationships between unit nouns. This technique makes use of the characteristics of Korean predicative nouns. To show that our method is effective on text in general domains, the experiments were performed on a test set randomly extracted from article titles in various newspaper sections.     

Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation

Distribution of interface states at the emitter–base heterojunctions in heterostructure bipolar transistors (HBTs) is characterized by using current–voltage characteristics using sub-bandgap photonic excitation. Sub-bandgap photonic source with a photon energy E_ph which is less than the energy bandgap E_g (E_g,GaAs = 1.42, E_g,AlGaAs = 1.76 eV) of emitter, base, and collector of HBTs, is employed for exclusive excitation of carriers only from the interface states in the photo-responsive energy range at emitter–base heterointerface. The proposed method is applied to an Al_0.3Ga_0.7As/GaAs HBT (A_E = W_E × L_E = 250 × 100 μm²) with E_ph = 0.943 eV and P_opt = 3 mW. Extracted interface trap density D_it was observed to be D_it,max  4.2 × 10¹² eV⁻¹ cm⁻² at emitter–base heterointerface.     

Highly Efficient Green ZnAgInS/ZnInS/ZnS QDs by a Strong Exothermic Reaction for Down‐Converted Green and Tripackage White LEDs

Highly efficient bright green‐emitting Zn?Ag?In?S (ZAIS)/Zn?In?S (ZIS)/ZnS alloy core/inner‐shell/shell quantum dots (QDs) are synthesized using a multistep hot injection method with a highly concentrated zinc acetate dihydrate precursor. ZAIS/ZIS/ZnS QD growth is realized via five sequential steps: a core growth process, a two‐step alloying–shelling process, and a two‐step shelling process. To enhance the photoluminescence quantum yield (PLQY), a ZIS inner‐shell is synthesized and added with a band gap located between the ZAIS alloy‐core and ZnS shell using a strong exothermic reaction. The synthesized ZAIS/ZIS/ZnS QDs shows a high PLQY of 87% with peak wavelength of 501 nm. Tripackage white down‐converted light‐emitting diodes (DC‐LEDs) are realized using an InGaN blue (B) LED, a green (G) ZAIS/ZIS/ZS QD‐based DC‐LED, and a red (R) Zn?Cu?In?S/ZnS QD‐based DC‐LED with correlated color temperature from 2700 to 10 000 K. The red, green, and blue tripackage white DC‐LEDs exhibit high luminous efficacy of 72 lm W^?1 and excellent color qualities (color rendering index (CRI, R_a) = 95 and the special CRI for red (R₉) = 93) at 2700 K.     

Towards Efficient Integrated Perovskite/Organic Bulk Heterojunction Solar Cells: Interfacial Energetic Requirement to Reduce Charge Carrier Recombination Losses

Integrated perovskite/organic bulk heterojunction (BHJ) solar cells have the potential to enhance the efficiency of perovskite solar cells by a simple one‐step deposition of an organic BHJ blend photoactive layer on top of the perovskite absorber. It is found that inverted structure integrated solar cells show significantly increased short‐circuit current (J_sc) gained from the complementary absorption of the organic BHJ layer compared to the reference perovskite‐only devices. However, this increase in J_sc is not directly reflected as an increase in power conversion efficiency of the devices due to a loss of fill factor. Herein, the origin of this efficiency loss is investigated. It is found that a significant energetic barrier (≈250 meV) exists at the perovskite/organic BHJ interface. This interfacial barrier prevents efficient transport of photogenerated charge carriers (holes) from the BHJ layer to the perovskite layer, leading to charge accumulation at the perovskite/BHJ interface. Such accumulation is found to cause undesirable recombination of charge carriers, lowering surface photovoltage of the photoactive layers and device efficiency via fill factor loss. The results highlight a critical role of the interfacial energetics in such integrated cells and provide useful guidelines for photoactive materials (both perovskite and organic semiconductors) required for high‐performance devices.