Work‐Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light‐Emitting Diodes

Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light‐emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF₃SO₂]₂NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin‐coating process. After TFSA doping, the sheet resistance of the TFSA‐doped five‐layer graphene, with optical transmittance of ≈88%, is as low as ≈90 Ω sq^?1. The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA‐doped graphene anode are 9.6 cd A^?1 and 10.5 lm W^?1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.     

Architectural Design Issues in a Clockless 32‐Bit Processor Using an Asynchronous HDL

As technology evolves into the deep submicron level, synchronous circuit designs based on a single global clock have incurred problems in such areas as timing closure and power consumption. An asynchronous circuit design methodology is one of the strong candidates to solve such problems. To verify the feasibility and efficiency of a large‐scale asynchronous circuit, we design a fully clockless 32‐bit processor. We model the processor using an asynchronous HDL and synthesize it using a tool specialized for asynchronous circuits with a top‐down design approach. In this paper, two microarchitectures, basic and enhanced, are explored. The results from a pre‐layout simulation utilizing 0.13‐μm CMOS technology show that the performance and power consumption of the enhanced microarchitecture are respectively improved by 109% and 30% with respect to the basic architecture. Furthermore, the measured power efficiency is about 238 μW/MHz and is comparable to that of a synchronous counterpart.     

Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters

We correlate the failure in miniature X‐ray tubes with the field emission gate leakage current of gated carbon nanotube emitters. The miniature X‐ray tube, even with a small gate leakage current, exhibits an induced voltage on the gate electrode by the anode bias voltage, resulting in a very unstable operation and finally a failure. The induced gate voltage is apparently caused by charging at the insulating spacer of the miniature X‐ray tube through the gate leakage current of the field emission. The gate leakage current could be a criterion for the successful fabrication of miniature X‐ray tubes.     

Mobile Oriented Future Internet (MOFI):Architectural Design and Implementations

With the recent growth in smartphone services, the “mobile” environment has become a key factor to consider in the design of the future Internet. In this paper, we propose Mobile‐Oriented Future Internet (MOFI), which is a new architecture for the future Internet for mobile‐oriented environments. The MOFI architecture is designed with three functional features: global identifier and local locator in the identifier‐locator separation, query‐first data delivery for route optimization, and distributed control of identifier‐locator mapping. The proposed architecture and functional operations are implemented and tested using the Linux platform. From the experiment results, we see that the MOFI architecture performs better than the existing identifier‐locator separation schemes, such as Proxy Mobile IP and Host Identity Protocol, in terms of data throughout, mapping control overhead, and handover delay.     

Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n drift layer due to the trenched p‐pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.     

Neuro-Glia-Vascular-on-a-Chip System to Assess Aggravated Neurodegeneration via Brain Endothelial Cells upon Exposure to Diesel Exhaust Particles

Air pollution induces neurodegeneration, including cognitive deficits, neuroinflammation, and disruption of the blood–brain barrier. The mechanisms underlying air pollution-mediated neurodegeneration have not yet been fully elucidated given the limited knowledge on intercellular interactions. A brain-on-a-chip platform is presented comprising neurons, glia, and brain endothelial cells (bECs; neuro-glia-vascular, NGV) and diesel exhaust particle (DEP)-induced neurodegeneration is evaluated with a particular focus on the intercellular interactions. DEP exposure in the NGV model yields Alzheimer's disease-like signatures, including amyloid beta accumulation, tau phosphorylation, hydrogen peroxide (H₂O₂)/reactive oxygen species (ROS) production, and neuronal cell death. bEC-secreted granulocyte-macrophage colony-stimulating factor (GM-CSF) stimulates microglial activation and the overproduction of H₂O₂/ROS in microglia, suggesting that the bEC-microglia-neuron is a neurodegeneration cascade. Pharmacological inhibition at each step of the cascade, including GM-CSF neutralization, microglial activation suppression, and ROS scavenging, prohibits neurodegeneration in the NGV model. Therefore, intercellular interactions should be further studied of air pollution-induced neurodegeneration.     

Skin-like Omnidirectional Stretchable Platform with Negative Poisson's Ratio for Wearable Strain–Pressure Simultaneous Sensor

Conventional elastomeric polymers used as substrates for wearable platforms have large positive Poisson's ratios (≈0.5) that cause a deformation mismatch with human skin that is multidirectionally elongated under bending of joints. This causes practical problems in elastomer-based wearable devices, such as delamination and detachment, leading to poorly reliable functionality. To overcome this issue, auxetic-structured mechanical reinforcement with glass fibers is applied to the elastomeric film, resulting in a negative Poisson's ratio (NPR), which is a skin-like stretchable substrate (SLSS). Several parameters for determining the materials and geometrical dimensions of the auxetic-structured reinforcing fillers are considered to maximize the NPR. Based on numerical simulation and digital image correlation analysis, the deformation tendencies and strain distribution of the SLSS are investigated and compared with those of the pristine elastomeric substrate. Owing to the strain-localization characteristics, an independent strain-pressure sensing system is fabricated using SLSS with a Ag-based elastomeric ink and a carbon nanotube-based force-sensitive resistor. Finally, it is demonstrated that the SLSS-based sensor platform can be applied as a wearable device to monitor the physical burden on the wrist in real time.     

Bio-Inspired Artificial Fast-Adaptive and Slow-Adaptive Mechanoreceptors With Synapse-Like Functions

Development of artificial mechanoreceptors capable of sensing and pre-processing external mechanical stimuli is a crucial step toward constructing neuromorphic perception systems that can learn and store information. Here, bio-inspired artificial fast-adaptive (FA) and slow-adaptive (SA) mechanoreceptors with synapse-like functions are demonstrated for tactile perception. These mechanoreceptors integrate self-powered piezoelectric pressure sensors with synaptic electrolyte-gated field-effect transistors (EGFETs) featuring a reduced graphene oxide channel. The FA pressure sensor is based on a piezoelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin film, while the SA pressure sensor is enabled by a piezoelectric ionogel with the piezoelectric-ionic coupling effect based on P(VDF-TrFE) and an ionic liquid. Changes in post-synaptic current are achieved through the synaptic effect of the EGFET by regulating the amplitude, number, duration, and frequency of tactile stimuli (pre-synaptic pulses). These devices have great potential to serve as artificial biological mechanoreceptors for future artificial neuromorphic perception systems.     

Double S-Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3-Hf0.5Zr0.5O2-Al2O3 Triple-Layer Structure

The negative capacitance (NC) effect, recently discovered in a fluorite-based ferroelectric thin film, has attracted great attention as a rescue to overcome the scaling limitations of the conventional memory and logic devices of highly integrated circuits. The NC effect manifesting an S-shaped polarization–voltage (P–V) curve is initially interpreted by a 1-dimensional Landau Ginzburg Devonshire (LGD) model. However, a series of recent studies have found that this effect can also be explained by the inhomogeneous stray field energy (ISE) model. In this study, by extending the ISE model in the ferroelectric (FE)-dielectric (DE) layered structure, an analytical model that considers the influence of the interfacial screening charge distribution is presented. This model showed that the NC effect in the FE-DE heterostructure can be manifested in various forms other than a single S-shaped P–V curve. In particular, a double S-shaped P–V curve is expected from the fully compensated anti-parallel domain structure, confirmed experimentally in the actual Al₂O₃/(Hf_0.5Zr_0.5)O₂/Al₂O₃ triple-layer structure. Furthermore, to reveal the origin of the double S-shaped P–V curve, a multidomain LGD model is presented. It is confirmed that this phenomenon is attributed to the evolution of inhomogeneous stray field energy.