Synthesis of Co/SiO2 hybrid nanocatalyst via twisted Co3Si2O5(OH)4 nanosheets for high-temperature Fischer-Tropsch reaction

A cobalt-silica hybrid nanocatalyst bearing small cobalt particles of diameter ～5 nm was prepared through a hydrothermal reaction and hydrogen reduction.The resulting material showed very high CO conversion (＞82％) and high hydrocarbon productivity (～1.0 gHc·g-1cat,·h-11) with high activity (～8.5 x 10-5 molco·g-1Co·S-1) in the Fischer-Tropsch synthesis reaction.     

Enhanced hydrothermal stability of ZSM-5 formed from nanocrystalline seeds for naphtha catalytic cracking

We successfully synthesized hydrothermally stable ZSM-5 with crystalline nano seeds. We employed a template-free method using ZSM-5 crystalline nano seeds and sodium silicate as a silica source. The prepared ZSM-5 exhibited uniform crystal size and relative crystallinity greater than 100 %. The size of the crystalline nano seed in the scale of 100 nm was found to be the optimum size for obtaining uniform, highly crystalline ZSM-5 with structural stability. After P-modification, the synthesized ZSM-5 with the optimally sized seed showed high hydrothermal stability and improved catalytic naphtha cracking activity compared to a commercial ZSM-5 catalyst. In order to find the elements for the increased hydrothermal stability, the samples were evaluated by studying crystallinity, aluminum spectrum, and acidity using XRD, solid-state NMR, and NH₃-TPD, respectively after steaming at 800 °C for 24 h. It is speculated that the increased hydrothermal stability of the ZSM-5 resulted mainly from the increased aluminum structural stability.     

Silver Nanoflower Decorated Graphene Oxide Sponges for Highly Sensitive Variable Stiffness Stress Sensors

Soft conductive materials should enable large deformation while keeping high electrical conductivity and elasticity. The graphene oxide (GO)‐based sponge is a potential candidate to endow large deformation. However, it typically exhibits low conductivity and elasticity. Here, the highly conductive and elastic sponge composed of GO, flower‐shaped silver nanoparticles (AgNFs), and polyimide (GO‐AgNF‐PI sponge) are demonstrated. The average pore size and porosity are 114 µm and 94.7%, respectively. Ag NFs have thin petals (8–20 nm) protruding out of the surface of a spherical bud (300–350 nm) significantly enhancing the specific surface area (2.83 m² g^?1). The electrical conductivity (0.306 S m^?1 at 0% strain) of the GO‐AgNF‐PI sponge is increased by more than an order of magnitude with the addition of Ag NFs. A nearly perfect elasticity is obtained over a wide compressive strain range (0–90%). The strain‐dependent, nonlinear variation of Young's modulus of the sponge provides a unique opportunity as a variable stiffness stress sensor that operates over a wide stress range (0–10 kPa) with a high maximum sensitivity (0.572 kPa^?1). It allows grasping of a soft rose and a hard bottle, with the minimal object deformation, when attached on the finger of a robot gripper.     

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m⁻²), along with a responsivity as high as 1.6 A W⁻¹ (wavelength = 465 nm) for a dark current of 0.24 A m⁻² (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.     

Control of the leakage current in SrTiO3 films by acceptor doping

Stoichiometric SrTiO3 (STO) films doped with Fe or Cr were prepared by r.f. magnetron sputtering technique. The effects of Fe or Cr doping in the SrTiO3 films were studied on the leakage current property which was discussed by defect chemistry. The experimental results can be explained by a model in which oxygen vacancies are the key defects responsible for the leakage current. Acceptor doping, with a small concentration of Fe or Cr, has led to a substantial improvement to 10–9 order in the leakage current density. Above the concentration of 0.010.02 mol% Fe2O3, Cr2O3, however, as the concentration increased, the leakage current increased. These acceptors in Ti4+ site are expected to electrically compensate for donor species such as oxygen vacancies, thereby reducing the concentration of mobile carriers that contribute to electrical conduction. Consequently, acceptor doped STO films have been shown to be superior to undoped films for applications requiring high leakage resistance, such as dynamic random access memory capacitors. © 1998 Chapman & Hall     

Thermal conductivity of CVD diamond films

Diamond films 60 and 170 µm in thickness were grown by PACVD (plasma-assisted chemical vapor deposition) under similar conditions. The thermal diffusivity of these freestanding films was measured between 100 and 300 K using AC calorimetry. Radiation heat loss from the surface was estimated by analyzing both the amplitude and the phase shift of a lock-in amplifier signal. Thermal conductivity was calculated using the specific heat data of natural diamond. At room temperature, the thermal conductivity of the 60 and 170 m films is 9 and 16 W-cm^–1. K^–1 respectively, which is 40–70% that of natural diamond, The temperature dependence of thermal conductivity of the CVD diamond films is similar to that of natural diamond, Phonon scattering processes are considered using the Debye model, The microsize of the grain boundary has a significant effect on the mean free path of phonons at low temperatures. The grain in CVD diamond film is grown as a columnar structure, Thus, the thicker film has the larger mean grain size and the higher thermal conductivity. Scanning electron microscopy (SEM) and Raman spectroscopy were used to study the microstructure of the CVD diamond films. In this experiment, we evaluated the quality of CVD diamond film of the whole sample by measuring the thermal conductivity.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994, Boulder, Colorado, U.S.A.