High temperature, high power InGaAs/GaAs quantum-well lasers withlattice-matched InGaP cladding layers

The authors report the high-temperature and high-power operation of strained-layer InGaAs/GaAs quantum well lasers with lattice-matched InGaP cladding layers grown by gas-source molecular beam epitaxy. Self-aligned ridge waveguide lasers of 3-μm width were fabricated. These lasers have low threshold currents (7 mA for 250-μm-long cavity and 12 mA for 500-μm-long cavity), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW for 3-μm-wide lasers and 285 mW for 5-μm-wide laser) at room temperature under continuous wave (CW) conditions. The CW operating temperature of 185°C is the highest ever reported for InGaAs/GaAs/InGaP quantum well lasers, and is comparable to the best result (200°C) reported for InGaAs/GaAs/AlGaAs lasers     

Investigation of the Intrinsic Activity of ZrxCe1−xO2 Mixed Oxides in the CO + NO Reactions: Influence of Pd Incorporation

The intrinsic activity of various Zr _x Ce_1–x O₂ mixed oxides and after a Pd deposition has been investigated in the CO + NO reactions from temperature-programmed experiments performed under stoichiometric conditions. It has been found that the activity of Zr _x Ce_1–x O₂ depends on either the specific surface area or the number of Ce cations and their intrinsic activity, Zr_0.5Ce_0.5O₂ being the most active support. The addition of palladium strongly enhances the catalytic activity of the supports probably due to a synergistic effect between CeO₂ and the metal since the initial activity of palladium-based catalysts is directly related to their Ce content. Such a catalytic enhancement has been explained by a bifunctional mechanism involving active sites probably composed of Pd and ceria. A strong deactivation operates leading to the disappearance of the beneficial effect of ceria. Such a deactivation seems to be dependent on the support composition, Pd supported Zr_0.25Ce_0.75O₂ being the most resistant to deactivation.     

High temperature (T⩾425 K) pulsed operation of quantum cascadelasers

High temperature pulsed operation of quantum cascade lasers is reported. At 425 K and 8.4 μm wavelength a peak output power of 17 mW was measured for a laser incorporating 75 stages of alternated active regions and injectors     

Active mode locking of broadband quantum cascade lasers

Active mode locking in broadband quantum cascade (QC) lasers with a repetition rate of about 14.3 GHz has been achieved through the modulation of the laser bias current. At low driving currents, the active mode locking in broadband QC lasers resembles the active mode locking in single-wavelength QC lasers, while at high driving currents, the mode locking properties are governed by the broad spectral gain of these lasers. At high bias currents, the active modulation excites Fabry-Perot modes across the entire gain spectrum from 6.7 to 7.4 /spl mu/m, with clear evidence of mode locking. The spectral width of the optical gain in the broadband QC lasers exceeds 2 THz and indicates the potential for generating subpicosecond pulses.     

Improved CW operation of quantum cascade lasers with epitaxial-sideheat-sinking

First results on the epilayer-side mounting of quantum cascade (QC) lasers are presented. Operated in continuous-wave (CW) mode, these lasers are superior to substrate-bonded devices. The maximum CW temperature is raised by 20 K (up to 175 K), and, at comparable heat sink temperatures, the performance with respect to threshold current, output power, and slope efficiency is greatly improved for the epilayer-side mounted devices. QC-laser-specific mounting procedures are discussed in this letter, such as the high reflectivity coating of the back-facet and the front-facet cleaving after mounting. Modeling of the temperature distribution inside the QC laser shows a strong temperature gradient within the active waveguide core, which partly explains the still low maximum CW operating temperatures     

Nanoarchitectonics of Electrically Activable Phosphonium Self-Assembled Monolayers to Efficiently Kill and Tackle Bacterial Infections on Demand

Prosthetic implants are widely used in dentistry and orthopedics and, as a result, infections can occur which cause their removal. Therefore, it is essential to propose methods of eradicating the bacteria that remain on the prosthesis during treatment. For this purpose, it is necessary to develop surfaces whose antibacterial activity can be controlled. Herein, we designed innovative and smart phosphonium self-assembled monolayer (SAM) interfaces that can be electrically activated on demand for controlling bacterial contaminations on solid surfaces. Upon electroactivation with a low potential (0.2 V for 60 min., conditions determined through a DOE), a successful stamping out of Gram-positive and Gram-negative bacterial strains was obtained with SAM-modified titanium surfaces, effectively killing 95% of Staphylococcus aureus and 90% Klebsiella pneumoniae. More importantly, no toxicity towards eukaryotic cells was observed which further enhances the biocompatible character of these novel surfaces for further implementation.     

MR cholangiography in primary sclerosing cholangitis

OBJECTIVE: The purpose of this study was to evaluate the ability of MR cholangiography to reveal the characteristics of biliary abnormalities found in primary sclerosing cholangitis. CONCLUSION: Our results suggest that MR cholangiography could be useful in the diagnosis of primary sclerosing cholangitis. Slightly dilated peripheral bile ducts unconnected to the central ducts in several hepatic segments are a characteristic MR sign of primary sclerosing cholangitis. However, other studies are necessary to establish the usefulness of MR cholangiography in relation to other imaging techniques for evaluating primary sclerosing cholangitis.     

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on III-V compound semiconductors affords tremendous functionality and opportunity by enabling the formation of high-quality gate oxides and passivation layers on III-V compound semiconductor devices. A 0.65-/spl mu/m gate-length depletion-mode n-channel GaAs MOSFET with an Al/sub 2/O/sub 3/ gate oxide thickness of 160 /spl Aring/ shows a gate leakage current density less than 10/sup -4/ A/cm/sup 2/ and a maximum transconductance of 130 mS/mm, with negligible drain current drift and hysteresis. A short-circuit current-gain cut-off frequency f/sub T/ of 14.0 GHz and a maximum oscillation frequency f/sub max/ of 25.2 GHz have been achieved from a 0.65-/spl mu/m gate-length device.     

Quantum cascade lasers: ultrahigh-speed operation, optical wirelesscommunication, narrow linewidth, and far-infrared emission

Following an introduction to the history of the invention of the quantum cascade (QC) laser and of the band-structure engineering advances that have led to laser action over most of the mid-infrared (IR) and part of the far-IR spectrum, the paper provides a comprehensive review of recent developments that will likely enable important advances in areas such as optical communications, ultrahigh resolution spectroscopy and applications to ultrahigh sensitivity gas-sensing systems. We discuss the experimental observation of the remarkably different frequency response of QC lasers compared to diode lasers, i.e., the absence of relaxation oscillations, their high-speed digital modulation, and results on mid-IR optical wireless communication links, which demonstrate the possibility of reliably transmitting complex multimedia data streams. Ultrashort pulse generation by gain switching and active and passive modelocking is subsequently discussed. Recent data on the linewidth of free-running QC lasers (~150 kHz) and their frequency stabilization down to 10 kHz are presented. Experiments on the relative frequency stability (~5 Hz) of two QC lasers locked to optical cavities are discussed. Finally, developments in metallic waveguides with surface plasmon modes, which have enabled extension of the operating wavelength to the far IR are reported     

Construction of mixed-level supersaturated designs and comparison of their performance: Application to a gas chromatographic method

A supersaturated design is a design for which there are fewer runs than effects to be estimated. Although two-level supersaturated designs are becoming increasingly popular, mixed-level designs are scarcely used. Mixed-level designs are needed when the response is based on a polynomial response surface model or in situations where factors are nominal variables (with more than two modalities). The aim of this study is to explore the construction of mixed-level supersaturated designs and to evaluate their performance from the analysis of peppermint oil using a gas chromatographic method as application. This experimental setup requires the study of seven factors at two levels and five factors at three levels. Different building methods are tested from asymmetric or symmetric supersaturated designs. The mixed-level supersaturated designs obtained are compared from the point of view of a priori criteria with the aim of evaluating which criteria are better suited to judge the quality and fitness for purpose of these experimental designs. Finally, the results of the supersaturated designs are compared to the complete classical design.