Threshold voltage reduction model for buried channel PMOSFETs using quasi-2-D Poisson equation

A quasi-two-dimensional (2-D) threshold voltage reduction model for buried channel pMOSFETs is derived. In order to account for the coexistence of isoand anisotype junctions in a buried channel structure, we have incorporated charge sharing effect in the quasi-2-D Poisson model. The proposed model correctly predicts the effects of drain bias (V/sub DS/), counter doping layer thickness (x/sub CD/), counter doping concentration (N/sub CD/), substrate doping concentration (N/sub sub/) and source/drain junction depth (x/sub j/), and the new model performs satisfactorily in the sub-0.1 /spl mu/m regime. By using the proposed model on the threshold voltage reduction and subthreshold swing, we have obtained the process windows of the counter doping thickness and the substrate concentration. These process windows are very useful for predicting the scaling limit of the buried channel pMOSFET with known process conditions or systematic design of the buried channel pMOSFET.     

Improved Hydrogen Capping Effect in n-Type Crystalline Silicon Solar Cells by SiN(Si-Rich)/SiN(N-Rich) Stacked Passivation

The effect of hydrogen capping of SiN(Si-rich)/SiN(N-rich) stacks for n-type c-Si solar cells was investigated. Use of a passivation layer consisting of Si-rich SiN with a refractive index (n) of 2.7 and N-rich SiN with a refractive index of 2.1 improved the thermal stability. A single SiN passivation layer with a refractive index of 2.05 resulted in an initial lifetime of 200 μs whereas the layer with a refractive index of 2.7 resulted in a high initial lifetime of 2 ms, but the layer degraded rapidly after firing. A stacked passivation layer with refractive indices of 2.1 and 2.7 had a stable lifetime of 1.5 ms with an implied open-circuit voltage (iV _oc) of 720 mV after firing. The thermally stable passivation mechanism with changing amounts of Si–N and Si–H bonding was analyzed by Fourier-transform infrared (FTIR) spectroscopy. Incorporation of the SiN _x stack layer (2.7 + 2.1) into the passivated rear of n-type Cz silicon screen-printed solar cells resulted in energy conversion efficiency of 19.69%. Improved internal quantum efficiency in the long-wavelength range above 900 nm, with V _oc of 630 mV, is mainly because of superior passivation of the rear surface compared with conventional solar cells.     

四频差动激光陀螺中差分损耗的探讨

理论分析了四频差动激光陀螺中由于镜片的Ｓ－Ｐ相位和Ｑ的各向异性及光束不过水晶片光轴等因素所引起的左、右旋偏振模式间的差分损耗。这种差分损耗会导致激光陀螺中零漂的形成。这一问题的研究对陀螺性能的改进具有重要的参考价值     

半导体封装中的可视化技术

树脂传递模封装是广泛使用的可靠性量产性均好的半导体封装方法。但随着封装体（PACKAGE）尺寸的日益薄型化和多腿化,不可避免地会发生与树脂在模腔中流动状态有关的空隙等使制品失效的不良模式。这样,通过观察树脂流动状态及对空隙的分布进行研究,对于研究空隙发生机理从而抑制空隙发生具有重要意义。本文将着重介绍两种新的研究实验方法：（1）应用玻璃嵌入式新型可视化模具观察树脂在模腔中的流动状态;（2）采用超声波探查图像装置（简称SAT）进行树脂封装体内部的观察。     

An intelligent remote monitoring system for artificial heart.

A web-based database system for intelligent remote monitoring of an artificial heart has been developed. It is important for patients with an artificial heart implant to be discharged from the hospital after an appropriate stabilization period for better recovery and quality of life. Reliable continuous remote monitoring systems for these patients with life support devices are gaining practical meaning. The authors have developed a remote monitoring system for this purpose that consists of a portable/desktop monitoring terminal, a database for continuous recording of patient and device status, a web-based data access system with which clinicians can access real-time patient and device status data and past history data, and an intelligent diagnosis algorithm module that noninvasively estimates blood pump output and makes automatic classification of the device status. The system has been tested with data generation emulators installed on remote sites for simulation study, and in two cases of animal experiments conducted at remote facilities. The system showed acceptable functionality and reliability. The intelligence algorithm also showed acceptable practicality in an application to animal experiment data.     

A low-power Ku-band downconverter in InGaP-GaAs HBT technology

We have developed a low-voltage, low-power Ku-band microwave monolithic integrated circuit (MMIC) downconverter using InGaP-GaAs heterojunction bipolar transistor technology. It consists of a preamplifier, a double-balanced mixer, and an L-band wideband intermediate-frequency (IF) amplifier. The downconverter achieves a conversion gain of 31 dB, with a gain flatness within /spl plusmn/ 1 dB, and an output-referred 1-dB compression power (P/sub 1dB,OUT/) of +2.5dBm. This downconverter dissipates 33mA from a 3-V supply. We believe that the operating voltage and power consumption are lower than those of previously published Ku-band MMIC downconverters.     

R-DRA: a replication-based distributed randomized algorithm for data dissemination in connected vehicular networks

Wireless Networks - As data dissemination is of great importance for applications in connected vehicular networks (VANETs), we aim to facilitate the performance of data dissemination in this study....     

Inserting a Mn-doped TiO2 layer for improving performance of pentacene organic thin-film transistors

Device performance of pentacene organic thin-film transistors (OTFTs) was significantly improved via inserting a Mn-doped TiO₂ layer between pentacene semiconductor and the source–drain electrodes. In comparison with the OTFTs with only-Au electrodes, the introduction of a thin Mn-doped TiO₂ layer leads to saturation current increasing from 31.9 μA to 0.22 mA, effective field-effect mobility improving from 0.24 to 1.13 cm²/V s, and threshold voltage downshifting from −11 to −2 V. These performance enhancements are ascribed to the significant reduction of contact resistance and smoothed surface of pentacene layer. This work may provide an effective approach to improve the performance of the pentacene based OTFTs by inserting a Mn-doped TiO₂ layer.