A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I_DS-V_DS) curves, substrate resistance effect on the I_DS-V_DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.     

Fluid and particle flow characteristics in a draft tube spouted bed with modified fluid outlet

Glass particles, 0.54-1.39 mm in diameter, are spouted with air in a half-cylindrical draft tube spouted bed with modified fluid outlet to investigate the flow characteristics of the fluid and particles in the annulus. Using the measured pressure distribution and particle velocity and pathline in the annulus, the fluid streamlines, fluid and particle residence time distributions are obtained. Effects of the spoul inlet fluid flowrate, distance between the draft lube and spout inlet and the modified fluid outlet on the flow fields are also discussed.     

LMS adaptive filters using distributed arithmetic for high throughput

We present a new hardware adaptive filter architecture for very high throughput LMS adaptive filters using distributed arithmetic (DA). DA uses bit-serial operations and look-up tables (LUTs) to implement high throughput filters that use only about one cycle per bit of resolution regardless of filter length. However, building adaptive DA filters requires recalculating the LUTs for each adaptation which can negate any performance advantages of DA filtering. By using an auxiliary LUT with special addressing, the efficiency and throughput of DA adaptive filters can be of the same order as fixed DA filters. In this paper, we discuss a new hardware adaptive filter structure for very high throughput LMS adaptive filters. We describe the development of DA adaptive filters and show that practical implementations of DA adaptive filters have very high throughput relative to multiply and accumulate architectures. We also show that DA adaptive filters have a potential area and power consumption advantage over digital signal processing microprocessor architectures.     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

Selective Photothermal Tumor Therapy Using Nanodiamond‐Based Nanoclusters with Folic Acid

This paper describes the fabrication and evaluation of folic acid (FA)‐conjugated nanodiamond (ND) nanoclusters for selective photothermal tumor therapy. ND nanoclusters with surface carboxyl groups are aminated using ethylenediamine and conjugated with FA via carbodiimide chemistry. The temperature of an aqueous ND dispersion (10 μg mL^?1) is increased to 54 °C upon laser exposure for 5 min. FA‐ND nanoclusters are preferentially taken up by KB cells (folate receptor positive) compared to WI‐38 (folate receptor negative) cells, suggesting specificity for tumor cells that overexpress folate receptors. Cell viability tests reveal that FA‐ND nanoclusters effectively and selectively ablate KB cells upon near‐infrared (NIR) laser exposure. In addition, fluorescence microscopy images confirm that only KB cells treated with FA‐ND nanoclusters are ablated in a spot (200 μm in diameter) by NIR laser exposure. In an animal model, a large amount of FA‐ND nanoclusters is accumulated into tumor tissue, resulting in dramatically reduced tumor volume post‐NIR laser exposure as compared to ND nanoclusters.     

A common-gate switched 0.9-W class-E power amplifier with 41% PAEin 0.25-μm CMOS

A power amplifier for wireless applications has been implemented in a standard 0.25-μm CMOS technology. The power amplifier employs class-E topology to exploit its soft-switching property for high efficiency. The finite dc-feed inductance in the class-E load network allows the load resistance to be larger for the same output power and supply voltage than that for an RF choke. The common-gate switching scheme increases the maximum allowable supply voltage by almost twice from the value for a simple switching scheme. By employing these design techniques, the power amplifier can deliver 0.9-W output power to 50-Ω load at 900 MHz with 41% power-added efficiency (PAE) from a 1.8-V supply without stressing the active devices     

A Video Streaming System for Mobile Phones: Practice and Experience

This paper presents a case of video streaming system for mobile phone which has actually been implemented and deployed for commercial services in CDMA2000 1X cellular phone networks. As the computing environment and the network connection of cellular phones are significantly different from the wired desktop environment, the traditional desktop streaming method is not applicable. Therefore, a new architecture is required to suit the successfully streaming in the mobile phone environment. We have developed a very lightweight video player for use in mobile phone and the related authoring tool for the player. The streaming server has carefully been designed to provide high efficiency, reliability and scalability. Based on a specifically-designed suite of streaming protocol, the server employs an adaptive rate control mechanism which transmits the media packets appropriately into the network according to the change in network bandwidth.Hojung Cha is currently a professor in computer science at Yonsei University, Seoul, Korea. His research interests include multimedia computing system, multimedia communication networks, wireless and mobile communication systems and embedded system software. He received his B.S. and M.S. in computer engineering from Seoul National University, Korea, in 1985 and 1987, respectively. He received his Ph.D. in computer science from the University of Manchester, England, in 1991.Jongmin Lee is a Ph.D. candidiate in computer science at Yonsei University, Seoul, Korea. His research interests include wireless multimedia system, QoS architecture, multimedia communication networks. He received his B.S. and M.S. in computer science from Kwangwoon University in 1999 and 2001, respectively.Jongho Nang is a professor in the Department of Computer Science at Sogang University. He received his B.S. degree from Sogang University, Korea, in 1986 and M.S. and Ph.D. degree from KAIST, in 1988 and in 1992, respectively. His research interests are in the field of multimedia systems, digital video library, and Internet technologies. He is a member of KISS, ACM, and IEEE.Sung-Yong Park is an associate professor in the Department of Computer Science at Sogang University, Seoul, Korea. He received his B.S. degree in computer science from Sogang University, and both the M.S. and Ph.D. degrees in computer science from Syracuse University. From 1987 to 1992, he worked for LG Electronics, Korea, as a research engineer. From 1998 to 1999, he was a research scientist at Telcordia Technologies (formerly Bellcore) where he developed network management software for optical switches. His research interests include high performance distributed computing and systems, operating systems, and multimedia.Jin-Hwan Jeong received the B.S. and M.S. degrees in computer science from Korea University, Seoul, Korea, in 1997, and 1999, respectively. He is currently in Ph.D. course at Korea University. His research interests include video processing for thin devices, multimedia streaming and operating systems.Chuck Yoo received the B.S. degree in electronics engineering from Seoul National University, Seoul, Korea and the M.S. and Ph.D. in computer science in University of Michigan. He worked as a researcher in Sun Microsystems Lab. from 1990 to 1995. He joined the Computer Science and Enginnering Department, Korea University, Seoul, Korea in 1995, where he is currently a professor. His research interests include high performance network, multimedia streaming, and operating systems.Jin-Young Choi received the B.S. degree from Seoul National University, Seoul, Korea, in 1982, the M.S. degree from Drexel University in 1986, and the Ph.D. degree from University of Pennsylvania, in 1993. He is currently a professor of Computer Science and Engineering Department, Korea University, Seoul, Korea. His current research interests are in real-time computing, formal methods, programming languages, process algebras, security, software engineering, and protocol engineering.     

A high-yield fabrication process for silicon neural probes

There is a great need for silicon microelectrodes that can simultaneously monitor the activity of many neurons in the brain. However, one of the existing processes for fabricating silicon microelectrodes-reactive-ion etching in combination with anisotropic KOH etching-breaks down at the wet-etching step for device release. Here we describe a modified wet-etching sidewall-protection technique for the high-yield fabrication of well-defined silicon probe structures, using a Teflon shield and low-pressure chemical vapor deposition (LPCVD) silicon nitride. In the proposed method, a micro-tab holds each individual probe to the central scaffold, allowing uniform anisotropic KOH etching. Using this approach, we obtained a well-defined probe structure without device loss during the wet-etching process. This simple method yielded more accurate fabrication and an improved mechanical profile.     

Studies on the performance characteristics and improvements of the piezoelectrically-driven micro gas compressors

This study presents the main characteristics of a micro gas compressor produced by microfabrication techniques on silicon wafers. The compressor consists of a compression chamber, check valves and a silicon membrane where the piezoelectric bimorph actuator is installed. Compressor performance was investigated under various working conditions of input voltage and frequency to the actuator at several downstream back pressures. Volume stroke ratio is a critical parameter for gas compressors. However, micro actuators do not generally produce large displacement, so the volume stroke ratio of the micro compressor is expected to be significantly less than that of conventional mechanical compressors. Therefore, the possibility of using dual compression was also investigated in order to improve micro compressor performance. The performance of the micro compressor is evaluated in this study through experiments and simulation.     

Automatic Transformation of Membrane‐Type Electronic Devices into Complex 3D Structures via Extrusion Shear Printing and Thermal Relaxation of Acrylonitrile–Butadiene–Styrene Frameworks

This work demonstrates a means of automatic transformation from planar electronic devices to desirable 3D forms. The method uses a spatially designed thermoplastic framework created via extrusion shear printing of acrylonitrile–butadiene–styrene (ABS) on a stress‐free ABS film, which can be laminated to a membrane‐type electronic device layer. Thermal annealing above the glass transition temperature allows stress relaxation in the printed polymer chains, resulting in an overall shape transformation of the framework. In addition, the significant reduction in the Young's modulus and the ability of the polymer chains to reflow in the rubbery state release the stress concentration in the electronic device layer, which can be positioned outside the neutral mechanical plane. Electrical analyses and mechanical simulations of a membrane‐type Au electrode and indium gallium zinc oxide transistor arrays before and after transformation confirm the versatility of this method for developing 3D electronic devices based on planar forms.