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1.
A. Kh. Abduev A. Sh. Asvarov A. K. Akhmedov V. G. Baryshnikov E. I. Terukov 《Technical Physics Letters》2002,28(11):952-954
We observed zinc oxide structures formed in an oxygen-containing atmosphere as a result of oxidation of the surface of zinc droplets. The gas-phase oxidation leads to the formation of hollow ZnO whiskers on the metal surface, which grow due to the transport of zinc vapor through their channels. It was found that high partial pressures of zinc and atomic oxygen give rise to fractal structures, which appear in a cascade process involving the sequential formation of zinc oxide vapor, ZnO clusters, and cluster aggregates as a result of the cluster-cluster interaction. A deposit of ZnO synthesized on the cathode surface exhibits a columnar structure. 相似文献
2.
Ch. M. Gadzhiev M. M. Isaev T. G. Akhmedov R. A. Sadykhov T. M. Mirzoev 《Measurement Techniques》1996,39(6):629-632
We propose a technique for optimal selection of standard pressure controllers for obtaining the best calibration characteristics
for differential pressure gauges, ensuring high-quality metrological characteristics for the data acquisition systems for
determination of the mass of petroleum products in storage tanks.
Translated from Izmeritel'naya Tekhnika, No. 6, pp. 36–38, June, 1996. 相似文献
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G. V. Chucheva A. G. Zhdan G. A. Akhmedov N. F. Kukharskaya 《Instruments and Experimental Techniques》2005,48(4):498-502
A metal-oxide-semiconductor (MOS) structure with the common field electrode insulated from the semiconductor by oxide layers h of different thicknesses allows the surface generation rate of minority charge carriers from current I(t) of nonequilibrium depletion state relaxation to be found. At the same time, it is possible in similar structures to observe the kinematics of electron-hole pair generation at the periphery of the field electrode (the edge generation effect). Measurements performed on an n-Si MOS structure with a stepwise change in oxide layer thickness (h
1 = 100 Å and h
2 = 3200 Å) allowed the generation rate at both the initial transient (t ∼ 10−5 s) stage of surface generation (4.34 × 1010 cm−2 s−1) and at the basic extremely slow stage (10.4 cm−2 s−1) to be reliably determined for the first time. The estimated peripheral generation rate of minority charge carriers (holes) was 7.8 × 1011 cm−2 s−1.__________Translated from Pribory i Tekhnika Eksperimenta, No. 4, 2005, pp. 84–88.Original Russian Text Copyright © 2005 by Chucheva, Zhdan, Akhmedov, Kukharskaya. 相似文献
5.
A. F. Akhmedov 《Chemistry and Technology of Fuels and Oils》2002,38(3):184-187
The results of studies of oligomerization of C6 —olefins in the presence of aluminum chloride and different alkyl-, alkenylaromatic, and carbocyclic compounds are generalized. By altering the conditions of oligomerization and the nature of the C6 —olefin hydrocarbons, viscosity additives and petroleum oil components, as well as synthetic base oils and feedstock for polyfunctional additives can be manufactured. The oligomerization conditions are a function of the concrete requirements for the quality of the synthesized compounds. 相似文献
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B. Yu. Aivazov M. S. Trifel' G. M. Akhmedov 《Power Technology and Engineering (formerly Hydrotechnical Construction)》1990,24(1):41-43
Translated from Gidrotekhnicheskoe Stroitel'stvo, No. 1, pp. 34–36, January, 1990. 相似文献