Revealing Electrical-Poling-Induced Polarization Potential in Hybrid Perovskite Photodetectors

Despite recent rapid advances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the electrical-poling-induced ion migration, accounting for many unusual attributes and thus performance in perovskite-based devices, remain comparatively elusive. Herein, the electrical-poling-promoted polarization potential is reported for rendering hybrid organic–inorganic perovskite photodetectors with high photocurrent and fast response time, displaying a tenfold enhancement in the photocurrent and a twofold decrease in the response time after an external electric field poling. First, a robust meniscus-assisted solution-printing strategy is employed to facilitate the oriented perovskite crystals over a large area. Subsequently, the electrical poling invokes the ion migration within perovskite crystals, thus inducing a polarization potential, as substantiated by the surface potential change assessed by Kelvin probe force microscopy. Such electrical-poling-induced polarization potential is responsible for the markedly enhanced photocurrent and largely shortened response time. This work presents new insights into the electrical-poling-triggered ion migration and, in turn, polarization potential as well as into the implication of the latter for optoelectronic devices with greater performance. As such, the utilization of ion-migration-produced polarization potential may represent an important endeavor toward a wide range of high-performance perovskite-based photodetectors, solar cells, transistors, scintillators, etc.     

A Preamble Re-utilizing Access Scheme for Machine-Type Communications with Optimal Access Class Barring

Wireless Personal Communications - The existing long term evolution networks originally designed for human-to-human communications are hard to tackle numerous and bursty random access requests from...     

500 kV 开关弹簧机构支架螺栓断裂的原因分析及处理

HPL500B2型弹簧机构支架(BA)螺栓断裂可能导致开关分合闸失败,对其原因进行分析,发现BA螺栓由于预紧固力矩过大,接近其扭断力矩,使得作用在BA螺栓上的力偏高,BA螺栓安全系数仅为12%,安全系数较低。列出BA螺栓更换步骤及注意事项,并详细介绍分闸、合闸弹簧调整步骤,为类似事件的处理提供参考。     

Improvement of dielectric breakdown strength and energy storage performance in Er2O3–modified 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3 lead-free ceramics

In this study, 0.95?Sr_0.7Ba_0.3Nb₂O₆-0.05CaTiO₃-x wt% Er₂O₃ ceramics (SBNCTEx; x?=?0–5) were synthesized using traditional solid-state method, and we investigated the microstructure, energy storage properties as well as the relationship between dielectric breakdown strength and interfacial polarization. As compared with pure 0.95?Sr_0.7Ba_0.3Nb₂O₆-0.05CaTiO₃ ceramics, the Er₂O₃ dopants suppressed the grain growth of SBNCTEx, and the doped ones showed the dense microstructure. The secondary phase was found for x?≥?1 according to the EDS results, and the influence of the secondary phase on relative dielectric breakdown strength has also been studied. The dielectric breakdown strength increased from 18.1?kV/mm to 34.4?kV/mm, which is good for energy storage. The energy storage density of 0.28?J/cm³ and the energy storage efficiency of 91.4% were obtained in the SBNCTE5 ceramics. The results indicate that SBNCTE ceramics can be used as energy storage capacitors.     

Enhanced photo-electrochemical activity of ZnO/Cu2S nanotube arrays photocathodes

ZnO/Cu₂S nanotube arrays are fabricated firstly by a facile and capping-agent-free method, and the photo-electrochemical performance has been studied systematically. The results show that ZnO/Cu₂S nanotube arrays achieve enhanced photo-electrochemical water splitting performance and the photocurrent densities of ZnO/Cu₂S are 7.9 times than that of ZnO at 0 V versus Ag/AgCl. The performance of the ZnO/Cu₂S nanotube arrays can be adjusted by changing the amount of Cu₂S microcrystals. The results confirm that the enhanced photo-electrochemical performance of ZnO/Cu₂S is due to the significantly improved visible light absorption, effective separation of photo-induced carriers due to the well band energy match and the formed p-n junction between ZnO and Cu₂S.     

基于分段加权的反向稀疏跟踪算法研究

为提高稀疏表示跟踪模型性能，提出一种分段加权的反向稀疏跟踪算法，将跟踪问题转化为在贝叶斯框架下寻找概率最高的候选对象问题，构造不同的分段权重函数来分别度量候选目标与正负模板的判别特征系数。通过池化来降低跟踪结果的不确定性干扰，选择正负模板加权系数差值最大的候选表示作为跟踪结果。实验表明，在光照变化、遮挡、快速运动、运动模糊情况下，所提出的算法可以确保跟踪结果的准确性和鲁棒性。