Double-plane pattern enhancement of rectangular slotted waveguide antennas using slotted concave surfaces

Conventional slotted waveguide antennas are well known and prominently used for many military and even marketable applications. This is due to their different advantageous electrical and mechanical characteristics. It is also well known that this type of antennas is a typical array of slots with which the width of the main beam can be controlled in only one plane by using a different number of elements in such antennas. Numerous research, discuss the capability of using an array of such antennas in order to narrow down the main beam in both planes and even achieve a scanning phased array. In this paper, a new and broader approach is presented concerning beam width control of the typical configuration of such antennas. This work presents the ability to control the main lobe in both planes using only one slotted waveguide to a certain extent. Different simulation results are considered at the 2.4 GHz frequency demonstrating improved effectiveness in terms of directivity and high gain as well as minimizing the side-lobe level and mechanically controlling the main lobe of the antenna.     

Low-power compact composite field AES S-Box/Inv S-Box design in 65 nm CMOS using Novel XOR Gate

The Substitution box (S-Box) forms the core building block of any hardware implementation of the Advanced Encryption Standard (AES) algorithm as it is a non-linear structure requiring multiplicative inversion. This paper presents a full custom CMOS design of S-Box/Inversion S-Box (Inv S-Box) with low power GF (2⁸) Galois Field inversions based on polynomial basis, using composite field arithmetic. The S-Box/Inv S-Box utilizes a novel low power 2-input XOR gate with only six devices to achieve a compact module implemented in 65 nm IBM CMOS technology. The area of the core circuit is only about 288 μm² as a result of this transistor level optimization. The hardware cost of the S-Box/Inv S-Box is about 158 logic gates equivalent to 948 transistors with a critical path propagation delay of 7.322 ns enabling a throughput of 130 Mega-SubBytes per second. This design indicates a power dissipation of only around 0.09 μW using a 0.8 V supply voltage, and, is suitable for applications such as RFID tags and smart cards which require low power consumption with a small silicon die. The proposed implementation compares favorably with other existing S-Box designs.     

Gain clamping in two-stage L-band EDFA using a broadband FBG

A gain-clamped long wavelength band erbium-doped fiber amplifier (L-band EDFA) with an improved gain characteristic is demonstrated by simply adding a broadband conventional band (C-band) fiber Bragg grating (FBG) in a two-stage amplifier system. The FBG reflects backward C-band amplified spontaneous emission (ASE) from the second stage back into the system to clamp the gain. The gain is clamped at about 22.4 dB with a gain variation below 0.4 dB for input signal powers of -40 to -15 dBm. Compared with an unclamped amplifier of similar noise figure values, the small signal gain has improved by 2.4 dB due to the FBG which blocks the backward propagating ASE. At wavelengths from 1570 to 1600 nm, gain of the clamped amplifier varies from 19.4 to 26.7 dB. The corresponding noise figure varies by /spl plusmn/0.35 dB around 5 dB, which is not much different compared to that of the unclamped amplifier.     

Deployable Structures Based on Buckling of Curved Beams Upon a Rotational Input

Inspired by the recent success of buckling-induced reconfigurable structures, a new class of deployable systems that harness buckling of curved beams upon a rotational input is proposed. First, experimental and numerical methods are combined to investigate the influence of the beam's geometric parameters on its non-linear response. Then, it is shown that a wide range of deployable architectures can be realized by combining curved beams. Finally, the proposed principles are used to build deployable furniture such as tables and lamp shades that are flat/compact for transportation and storage, require simple or no assembly, and can be expanded by applying a simple rotational input.     

Optical GFDM: an improved alternative candidate for indoor visible light communication

Photonic Network Communications - This paper proposes generalized frequency division multiplexing (GFDM) for indoor visible light communication (VLC). GFDM is a flexible multi-carrier scheme that...     

Effect of wafer thinning methods towards fracture strength and topography of silicon die

This paper characterizes die damage resulting from various wafer thinning processes. Die fracture strength is measured using ball breaker test with respect to die surface finish. Further study on surface roughness and topography of each surface finish is obtained by atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. Stress relief process with 25 μm removal is able to strengthen 100 μm wafer by 20.4% using chemical wet etch and 75 μm wafer by 36.4% with plasma etch. Relatively, plasma etching shows higher fracture strength and flexibility compared to chemical wet etch. This is due to topography of the finished surface of plasma etch is smoother and rounded, leading to a reduced stress concentration, hence improved fracture strength.     

A routing algorithm for reducing optical loss in photonic Networks-on-Chip

Driven by increase in automation, smart homes play an important role in today’s human life. This paper presents a new model for smart home technologies based on multi-device bidirectional visible light communication (VLC). For multiple devices and users, orthogonal code-based wavelength division (color beams) full-duplexed bidirectional VLC link is proposed. The color beams from RGB LEDs are utilized to transmit data and synchronize multi-device transmission. To enhance the performance of the proposed model, receiver diversity is also employed. Performance evaluation reveals that the proposed VLC-based model for smart homes is efficient with superior BER performance in a typical smart home environment except for the far corners. The maximum achievable data rate for each user up to four users is found to be 24 Mbps at both uplink and downlink transmissions.     

Industrie 4.0 Readiness: Green Computing in Relation with Key Performance Indicator for a Manufacturing Industry

Mobile Networks and Applications - An effective measure of Key Performance Indicators (KPIs) is of great significance to enhance the capabilities of a decision support system (DSS) of any...     

New Feedback Architecture for VCO-Based Delta-Sigma ADCs Utilizing Phase Shifter

The voltage controlled oscillator-based （VCO-based） continuous-time delta-sigma （CTDS） analog to digital converter （ADC） suffers from nonlinearity and mismatch in its feedback network. A new feedback network consisting of a phase shifter is proposed. The phase shifter replaces the digital to analog converter （DAC） in the proposed architecture. Feasibility of the proposed idea is discussed and its higher performance is illustrated through a behavioral simulation approach （CppSim）. We have also developed the phase shifter as a variable all-pass filter in the C language. The nonlinearity and mismatch of the system caused by DAC is mitigated, resulting in higher signal to noise ratio （SNR） and signal to noise and distortion ratio （SNDR）, respectively.     

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin-Film Solar Cell

Exhibiting outstanding optoelectronic properties, antimony selenide (Sb₂Se₃) has attracted considerable interest and has been developed as a light absorber layer for thin-film solar cells over the decade. However, current state-of-the-art Sb₂Se₃ devices suffer from unsatisfactory “cliff-like” band alignment and severe interface recombination loss, which deteriorates device performance. In this study, the heterojunction interface of an Sb₂Se₃ solar cell is improved by introducing effective aluminum (Al³⁺) cation into the CdS buffer layer. Then, the energy band alignment of Sb₂Se₃/CdS:Al heterojunction is modified from a “cliff-like” structure to a “spike-like” structure. Finally, heterojunction interface engineering suppresses recombination losses and strengthens carrier transport, resulting in a high efficiency of 8.41% for the substrate-structured Sb₂Se₃ solar cell. This study proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, paving a bright avenue to overcome the efficiency bottleneck of Sb₂Se₃ thin-film solar cells.