Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures

A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.     

土家族西兰卡普中的动植物图形

西兰卡普是土家语,“西兰”是被盖,“卡普”是花.在很久以前,泽母若有个美丽的土家妹子,她就像一株清晨的山茶花.她的名字叫西兰,她很聪明,心灵手巧,又很勤快.每天不是满坡满岭去采花,就是坐在吊脚楼上用五彩线绣花,西兰把自己织的布都叫“卡普”.乡亲们为了纪念她,便把他生前修的花铺盖叫西兰卡普.     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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Study on the forecast method for underground coal mine

At present, coal mine fires were forecasted with some temperature, smog, CO, CO2, etc, however, this method can＇t meet the requirements for safe production of coal mines in monitoring accuracy and validity. Overcoming these problems of foregone monitoring methods, using multi-parameters which include fire image, smog, CO, CO2, O2, etc, the paper put forward a synthetical analysis monitor with advanced technology of neural network. The research and application of this method has significance in theory and practical value for coal mine fire forecast.     

钙钛矿结构材料的制备方法研究

介绍了巨磁电阻效应的发展现状,主要研究了有关钙钛矿结构L1-yCyMnO3（L=a3＋,Pr3＋,Nd3＋等稀土离子;C=Ca2＋,Sr2＋,Ba2＋等二价碱土金属离子）体系的制备方法及其特点,并对各种方法制备的样品特性进行了比较。对材料研究目的的不同,需要不同特性的样品,本研究可以对制备方法的选择提供一个参考。     

Sensing mechanism of Ag/α-MoO3 nanobelts for H2S gas sensor

Sensing mechanism is still a big problem in the field of gas sensor.In-depth study of the sensing mecha-nism can provide better ideas for the design of sensing ...     

光亮油生产技术

介绍光亮油发展趋势、市场情况、生产工艺以及抚顺石油化工研究院开发的全氢法光亮油生产技术.     

EDGE网络的规划及资源配置研究

本文在现有网络分析的基础上,进行了EDGE数据网的规划,并通过仿真对规划结果进行了验证,最后对语音和数据网络的资源配置方法进行了研究,提出了相应的资源配置方法。