Theory and design of a tapered line distributed photodetector

We present the theory and design of a tapered line distributed photodetector (TLDP). In the previously demonstrated velocity-matched distributed photodetector (VMDP), high electrical bandwidth is achieved by proper termination in the input end to absorb reverse traveling waves, sacrificing one-half of the quantum efficiency. By utilizing the tapered line structure and phase matching between optical waves and microwaves in our analyzed structure, a traveling-wave photodetector is more realizable and ultrahigh bandwidth can be attained due to removal of the extra input dummy load that sacrifices one-half of the total quantum efficiency. To investigate the advantages of TLDP over VMDP, we calculate their electrical bandwidth performances by using an analytic photodistributed current model. We adopted low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal (MSM) traveling-wave photodetectors as example unit active devices in the analytic bandwidth calculation for their high-speed and high-power performances. Both VMDP and TLDP in our simulation are assumed to be transferred onto glass substrates, which would achieve high microwave velocity/impedance and make radiation loss negligible. The simulated bandwidth of a properly designed LTG GaAs MSM TLDP is /spl sim/325 GHz, which is higher than the simulated bandwidth of the LTG GaAs MSM VMDP with an open-circuit input end (/spl sim/240 GHz) and is almost comparable to the simulated bandwidth of an input-terminated LTG GaAs MSM VMDP (/spl sim/330 GHz). This proposed method can be applied to the design of high-bandwidth distributed photodetectors for radio-frequency photonic systems and optoelectronic generation of high-power microwaves and millimeter waves.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

风扇磨煤机ZGMn13冲击板的失效分析

ZGMn13冲击板的失效方式为不同角度的粒子撞击和冲刷，其表面可以分为三个典型的磨损区域：低角度撞击区、高角度撞击区和冲刷区。详细分析了该三个磨损区域的磨损机理。次表面分析的结果表明，在低负度撞击和冲刷条件下，高锰钢未能充分加工硬化，耐磨性提高有限。     

基于规则的光学邻近矫正中规则的相关处理

讨论了如何选择适当的规则,如何建立简洁实用的规则库,如何应用规则库.提出了四种主要的光学邻近矫正规则,在实验结果中列举了规则库中的部分数据.利用规则矫正后的版图光刻得到的硅片图形有了明显的改善.规则库的自动建立部分 (OPCL)是基于规则的光学邻近矫正系统的重要组成部分.     

环保型隧道防火涂料的研究

介绍了国内外公路隧道、铁路隧道及地铁火灾情况 ,研制出一种可在潮湿环境中使用、火灾发生时无有害气体产生的环保型隧道防火涂料。涂层厚度 18～2 0 mm,耐火极限达 3小时。为防止涂料加水拌和后沉淀分层 ,增加涂料的和易性 ,研制出一种分散剂。     

FCC原料掺入裂解焦油的研究及其机理分析

在催化裂化固定流化床小试装置上，对裂化原料中掺入富含芳烃的添加剂－裂解焦油进行了考察，确定了添加剂的最佳掺入量为1％，与不掺添加剂的裂化原料相比，其汽油产率提高，生焦量和干气产率减少，汽油选择性变好。同时通过对添加剂的原料体系的结构研究，对添加剂影响催化裂化过程的机理进行了探讨。     

舰船水声隐身技术(二)

本文探讨了水声隐身性能对舰船战技术性能的影响 ,舰船水噪声的主要噪声源、水噪声的治理措施及其展望。     

High-resolution electron microscopy of the twinning and intergrowth in Ca4Al6SO16 and Ca3SrAl6SO16

The microstructures of unhydrated calcium aluminosulphate Ca₄Al₆SO₁₆ and Ca₃SrAl₆SO₁₆ have been studied by high-resolution electron microscopy (HREM). The results showed that twinning and twinned slabs could be introduced taking the [1 1 2] direction as the twin axis so that it seems to be coincident with the law of twinning formed in body-centred cubic structures. A previously reported superlattice with a repeat period twice that of the fundamental structure along the 〈1 1 0〉 direction has also been found in both matrix and twin variants. The close intergrowth of Ca₃SrAl₆SO₁₆ and another phase, possibly Sr₃Al₂O₆ existing as an inclusion between these two twin variants, was determined and clearly revealed by electron diffraction and HREM images. The coherent interphase boundaries and orientation relationship between them can also be deduced.     

A Note on PIN Polynomials and PRIN Rational Functions

This brief presents a necessary and sufficient condition for testing positive, real, imaginary, and negative rational functions. A related term, the positive, imaginary, and negative polynomial, is defined and two necessary and sufficient conditions for testing it are given.