Austenitizing treatment influence on the electrochemical corrosion behavior of 0.3C-14Cr-3Mo martensitic stainless steel

Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M₂₃C₆ carbide which acts as preferential sites for pitting corrosion.     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.     

Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.     

At least N+1 finite transmission zeros using frequency-variant negative source-load coupling

A second-order cross-coupled combline filter which has three finite transmission zeros is presented. The problem of the frequency-invariant coupling in a real circuit is introduced. To make extra transmission zeros, a top metalized dielectric block is used.     

A transmit MIMO scheme with frequency domain pre-equalization for wireless frequency selective channels

In this paper, we introduce a transmit multiple-input multiple-output (MIMO) scheme with frequency domain pre-equalization for a multipath or frequency selective channel. In this scheme, MIMO processing in the frequency domain is performed at the transmitter or base station so that the receiver or mobile station only requires limited processing. This scheme provides high data rates and also inherits from the frequency domain equalization the property of relatively low complexity in severe multipath environments. The MIMO transmit processing is derived by minimizing the minimum mean square errors (MMSE), and expressions for the signal-to-interference-plus-noise ratio and error probability based on the Gaussian approximation of the interference term are provided. Some important associated issues, such as channel errors and computational complexity, are also investigated. Numerical simulations are also provided and these demonstrate the improved performance of our proposed scheme compared to other transmit MIMO schemes. In particular, they show that the proposed system can attain multipath or frequency diversity of the channel.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

Dynamics modeling and analysis of a biped walking robot actuated by a closed-chain mechanism

We developed a new type of human-sized biped walking robot (BWR) driven by the closed-chain type of joint actuator. Each leg of the robot is composed of three pitch joints and one roll joint. In all, a 15 degree-of-freedom robot including four arm joints and three joints for the head was developed. The BWR was developed to walk autonomously such that all leg joints are actuated by small 90 W dc motors/drivers and dc batteries and controllers which are boarded. The joint actuator for the BWR is composed of the four-bar-link mechanism driven by the ball screw which has high strength and high gear ratio. A dynamics modeling of the developed BWR for forward walking is presented in which the revolute joint dynamics are transformed into the prismatic joint dynamics of the ball screw. Also, an analysis on the four-bar-link mechanism applied to the joint actuator and on the structure of the BWR is shown. The design specification of the actuating motor for the BWR is analyzed through the torque analysis of the four-bar-link actuator. Through walking experiments of the BWR, the walking performance and trajectory tracking ability is shown. © 2004 Wiley Periodicals, Inc.     

The stress-whitened damage zone of PVC blends

The stress-whitened damage zone that formed ahead of a semicircular notch during slow tensile loading has been measured from optical micrographs of translucent blends of poly(vinyl chloride) (PVC) with experimental chlorinated polyethylene (CPE) resins. When the zone was small, the plane strain condition applied and from the elastic stress distribution a constant mean stress condition was found at the boundary of the crescent-shaped zone. The critical mean stress did not depend on the chlorine content or the chlorine distribution of the experimental CPE resin used in the blend. While the critical mean stress decreased as the amount of CPE in the blend was increased, the critical volume strain, calculated from the bulk modulus, was independent of composition and was thought to be the controlling parameter for stress-whitening. When the zone was larger, the shape was qualitatively described by concepts of stress redistribution in the presence of a plastic zone ahead of the notch. Macroscopic flow and necking were only detected near the maximum in the stress-displacement curve.     

A self-resonant frequency-modulated micromachined passive pressure transensor

In this paper, we report on the design, fabrication, and test of a passive pressure transensor. The sensor uses the self-resonant frequency modulation of an integrated coil to detect the pressure variations. This modulation is generated by the relative displacement of a ferrite core attached to a silicone rubber membrane. This scheme simplifies the packaging of the passive transensor by removing the requirement for a separate capacitor to form the resonator. A 30-turn 1.7-/spl mu/H coil having dimensions of 3/spl times/3 mm/sup 2/ is used in a prototype design yielding a sensitivity of 9.6 kHz/kPa with a cylindrical ferrite core of 0.95-mm diameter and 0.5-mm height. We also present a theoretical model of the sensor that shows good agreement with the experimental data. This model can be a useful tool for further optimization of the senors.     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.