Validation of temporal BRDFs of paddy fields estimated from MODIS reflectance data

The effect of the bidirectional reflectance distribution function (BRDF) is one of the most important factors in correcting and validating the reflectance obtained from remotely sensed data. While the importance of BRDF has become widely recognized, bidirectional reflectance factor (BRF) data measured for correction and validation are insufficient because of the technical difficulty of the measurement. The primary objective of the present research is to estimate BRDF effects from Moderate Resolution Imaging Spectroradiometer (MODIS) data. Temporal ground-based BRDFs of rice paddy fields were estimated from ground measurements conducted in June and August 2002. MODIS-derived BRDFs obtained from MODIS reflectance data and ground-based BRDFs were estimated using the reciprocal form of the RossThick and LiSparse (RossThick-LiSparse-R) kernels, a semiempirical BRDF model adopted for the operational MODIS BRDF product. The MODIS-derived band 1 (620-680 nm) and band 2 (841-876 nm) BRDFs were compared with the ground-based BRDFs corresponding to the same waveband, respectively. The comparison results demonstrate that BRDFs of paddy fields change in accordance with paddy growth and that MODIS-derived BRDFs are closely related to ground-based BRDFs in most of the cases. It was also revealed that MODIS-derived BRDFs can be estimated to a high degree of accuracy when MODIS data necessary for the estimation are available.     

Development of coincidence transmission electron microscope. III. Incorporation with gamma-type imaging energy filter

We have developed a new analytical transmission electron microscope (TEM), called coincidence TEM, which, in principle, enables observation of elemental mapping images at a high signal-to-noise ratio. We have previously reported the successful observation of an elemental mapping image of a specimen, but over a very long period of time (168 h). To solve this inefficiency, we installed a gamma-type imaging energy filter in the coincidence TEM to remove the no-loss electrons, which are mainly transmitted electrons. This has enabled the intensity of the background signals in the coincidence measurement to be markedly reduced. The coincidence TEM with a gamma-type imaging energy filter allows the coincidence image to be observed in 3 h, thus, the measurement time is shortened by two orders of magnitude. Moreover, the use of a silicon drift detector (SDD) will shorten the measurement time.     

Iron–Nitrogen‐Doped Vertically Aligned Carbon Nanotube Electrocatalyst for the Oxygen Reduction Reaction

A highly active iron–nitrogen‐doped carbon nanotube catalyst for the oxygen reduction reaction (ORR) is produced by employing vertically aligned carbon nanotubes (VA‐CNT) with a high specific surface area and iron(II) phthalocyanine (FePc) molecules. Pyrolyzing the composite easily transforms the adsorbed FePc molecules into a large number of iron coordinated nitrogen functionalized nanographene (Fe–N–C) structures, which serve as ORR active sites on the individual VA‐CNT surfaces. The catalyst exhibits a high ORR activity, with onset and half‐wave potentials of 0.97 and 0.79 V, respectively, versus reversible hydrogen electrode, a high selectivity of above 3.92 electron transfer number, and a high electrochemical durability, with a 17 mV negative shift of E _1/2 after 10 000 cycles in an oxygen‐saturated 0.5 m H₂SO₄ solution. The catalyst demonstrates one of the highest ORR performances in previously reported any‐nanotube‐based catalysts in acid media. The excellent ORR performance can be attributed to the formation of a greater number of catalytically active Fe–N–C centers and their dense immobilization on individual tubes, in addition to more efficient mass transport due to the mesoporous nature of the VA‐CNTs.     

自组织InAs/GaAs量子点的表面氮化研究

用低温光荧光(PL)和透射电子显微镜(TEM)研究了表面氮化自组织InAs/GaAs量子点的光学性能和微观结构。结果表明氮化后形成薄层的InAsN薄膜作为应变缓和层覆盖在量子点的表面,使得随着氮化时间的增加,InAs量子点的位错密度提高、尺寸变大、纵横比提高、发光波长变长、强度变低。     

The Nanometer-Sized Eutectic Structure of Si/CrSi<Subscript>2</Subscript> Thermoelectric Materials Fabricated by Rapid Solidification

Nanostructuring is known to be an effective method to improve thermoelectric performance but, generally, it requires complex procedures and much labor. In the present study, self-assembled nanometer-sized composite structures of silicon (Si) and chromium disilicide (CrSi₂) were easily fabricated by the rapid solidification of a melt with a eutectic composition. Ribbon-like samples were obtained with a dominant nanostructure of fine aligned lamellae with a spacing range of 20–35 nm. The thermoelectric power factor of the ribbon was observed to be 1.2 mW/mK² at room temperature and reached 3.0 mW/mK² at 773 K. The thermal conductivity was 65% lower than that of a bulk eutectic sample. The results suggest that this method is promising for fabricating an effective nanostructure for thermoelectric performance.     

Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n<Superscript>+</Superscript>-GaAs heterojunction diodes for an X-ray imaging detector

The growth characteristics of thick (100) CdTe epitaxial layers of a thickness up to 200 μm on a (100) GaAs substrate in a metal-organic vapor-phase epitaxy (MOVPE) system and fabrication of CdTe/n⁺-GaAs heterojunction diodes for their possible applications in low-energy x-ray imaging detectors are reported. The grown epilayers were of high structural quality as revealed from the x-ray double-crystal rocking curve (DCRC) analysis, where the full-width at half-maximum (FWHM) values of the (400) diffraction peaks was between 50 arcsec and 70 arcsec. The 4.2-K photoluminescence (PL) showed high-intensity bound-excitonic emission and very small defect-related peaks. The heterojunction diode fabricated had a good rectification property with a low value of reverse-bias current. The x-ray detection capability of the diode was examined by the time-of-flight (TOF) measurement, where good bias-dependent photoresponse was observed, but no carrier transport property could be deduced. It was found that the CdTe layer has a large number of trapping states as attributed to the cadmium-related vacancy and Ga-impurity, diffused from the substrate, related defect complexes.     

A fourth-order bandpass Δ-Σ modulator usingsecond-order bandpass noise-shaping dynamic element matching

This paper describes a multibit bandpass ΔΣ modulator (DSM) for a frequency-interleaved analog-to-digital (A/D) converter (ADC). A frequency-interleaved ADC using low oversampling ratio (OSR) DSMs is an attractive approach for broadband and high resolution A/D conversion. A multibit DSM is suitable for low-oversampling operation; however, the overall resolution of a multibit DSM is restricted by the accuracy of the internal D/A converter (DAC). Some methods have been reported for improving the internal DAC accuracy of a low-pass DSM, but no bandpass-shaping technique applicable to a bandpass DSM has been implemented, although some methods have been proposed by using simulation. This paper proposes a multibit bandpass DSM with bandpass noise-shaping dynamic element matching (BPNSDEM), which enables bandpass shaping to mismatch error of the internal DAC, and presents its implementation. The modulator was implemented in a 0.25-μm CMOS technology. It operates at a 2.5-V power supply and achieves a signal-to-noise ratio of 77.4 dB over a 250-kHz bandwidth centered at 566 kHz     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Enzymatic production of fructose 1,6-diphosphate using crude cell extract of Bacillus stearothermophilus

The enzymatic production of fructose 1,6-diphosphate (FDP) from glucose was performed in a batch reactor and a semibatch reactor using the crude cell extract of Bacillus stearothermophilus which contains all four enzymes required for the synthesis. The experimental results of the yield and the time courses of FDP production obtained using various enzyme concentrations were in good agreement with the theoretical predictions calculated based on the differential equations including the rate equations of the four enzymes, which were determined using the purified enzymes of B. stearothermophilus.