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Shangyang Xiao Weihong Qiu Jun Liu Thomas X. Wu Issa Batarseh 《International Journal of Electronics》2013,100(1):51-61
Traditional current sensing topology based on inductor equivalent series resistance fails to extract phase currents for coupled inductors due to the presence of the magnetising inductance. This article proposes a new direct-current resistance current sensing topology for coupled inductors. By implementation of a simple resistor-capacitor network, the proposed topology can preserve the coupling effect between phases. As a result, real phase inductor currents and total current can be sensed. Detailed mathematical analysis and design equations are presented in this article. Sensitivity and mismatch issues are addressed. Experimental results show that the proposed topologies are able to extract phase current as well as total current with acceptable accuracy. 相似文献
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Pei-Nan Ni Jin-Chao Tong Landobasa Y. M. Tobing Shu-Peng Qiu Zheng-Ji Xu Xiao-Hong Tang Dao-Hua Zhang 《Journal of Electronic Materials》2017,46(7):3867-3872
We present a simple thermal treatment with the antimony source for the metal–organic chemical vapor deposition of thin GaSb films on GaAs (111) substrates for the first time. The properties of the as-grown GaSb films are systematically analyzed by scanning electron microscopy, atomic force microscopy, x-ray diffraction, photo-luminescence (PL) and Hall measurement. It is found that the as-grown GaSb films by the proposed method can be as thin as 35 nm and have a very smooth surface with the root mean square roughness as small as 0.777 nm. Meanwhile, the grown GaSb films also have high crystalline quality, of which the full width at half maximum of the rocking-curve is as small as 218 arcsec. Moreover, the good optical quality of the GaSb films has been demonstrated by the low-temperature PL. This work provides a simple and feasible buffer-free strategy for the growth of high-quality GaSb films directly on GaAs substrates and the strategy may also be applicable to the growth on other substrates and the hetero-growth of other materials. 相似文献
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Yi Qiu Ruixiang Peng Jingyu Shi Zhenyu Chen Ziyi Ge 《Advanced functional materials》2023,33(28):2300831
Inverted organic solar cells (i-OSCs) provide an exciting opportunity for commercialization owing to their excellent device air stability. However, light soaking (LS) issue generally occurs in metal oxide based i-OSCs, causing drastically decreased performance. The underlying root of LS effect is not clearly clarified until now. Herein, it is demonstrated that the surface oxygen defects on metal oxide nanoparticles, such as chemisorbed superoxide (O2−) and hydroxide (OH) dangling bonds, are the main reasons for LS issue in i-OSCs. The O2− layer induces band bending at the cathode interface and increases the work function (WF) of metal oxide, thus leading to inefficient charge transport. The dangling bonds serve as interfacial trap states and cause non-radiative recombination, thus leading to the reduced open circuit voltage (Voc). With ultraviolet (UV) illumination, the surface oxygen defects are interacted with photogenerated carriers, thereby improving the photovoltaic performance. Additionally, UV pretreatment of metal oxide films is employed to eliminate the LS issue and the resulting device yields significantly improved fill factors from 50.20% to 73.50% in the pristine SnO2 based i-OSCs. This study reveals the origin of LS effect in i-OSCs and proposes a suggested model for LS mechanism. 相似文献
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RGBW滤光阵列常被用于提升探测器在低照度下的成像质量,但相应的彩色重构方法依然是结合拜尔阵列特点设计的,未充分利用亮度信息的优势,故重构结果较差.针对这一缺陷,首先,使用引导滤波挖掘亮度信息和彩色信息的关联性.然后,根据残差的平滑性,设计了适用于SONY-RGBW滤光阵列空域特点的采样率逐步提升的多步残差插值算法.接... 相似文献
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