A new architecture for the NVRAM-an EEPROM backed-up dynamic RAM

An architecture for a nonvolatile RAM (NVRAM) suitable for high-density applications is described. In the cell, a dynamic RAM cell is merged into an EEPROM cell. A capacitor is constructed between the control gate and the drain diffusion layer of the FLOTOX-type EEPROM memory cell. The equivalent circuit in the dynamic RAM mode consists of two transistors and a capacitor, which eliminates a dummy cell. A dynamic RAM sense amplifier is used in both modes, and it works as a data latch when data are transferred between the dynamic RAM and the EEPROM. The process of the NVRAM is compatible with ordinary EEPROMs     

A case report of incomplete endocardial cushion defect with mitral stenosis in an elderly patient

The following paper describes a mitral valve replacement (SJM 27 mm), the patch closure (EPTFE) of an ostium primum atrial septal defect and tricuspid annuloplasty (De Vega's method) in a 64-year-old female patient with an incomplete endocardial cushion defect and mitral stenosis. Surgery revealed thickened, mitral valve leaflets and the presence of a cleft, findings similar to those observed in case of rheumatic degeneration. Investigation of patient hemodynamics confirmed a diagnosis of Lutembacher syndrome and a lower with left ventricle volume. After surgery, the volume of left ventricle increased and the patients clinical course was uneventful.     

Twisted bit-line architectures for multi-megabit DRAMs

As the memory cell array of DRAM has been scaled down, inter-bit-line coupling noise has emerged as a serious problem. The signal loss due to this noise is estimated at about 40% of the signal amplitude in a polycide-bit-line 16-Mb DRAM with a technologically attainable scaling scheme. Twisted bit-line architectures to reduce or eliminate the noise are proposed and demonstrated by the soft-error rate improvement of a 1-Mb DRAM. The effective critical charge is improved by 35%, which is attributed not only to the improvement of the signal amplitude but also to the elimination of large coupling noise during the sensing operation. The impact of these twisted bit-line architectures from a scaling viewpoint is also examined, and they are shown to be promising candidates for overcoming the scaling problems of DRAMs     

Identification of a novel nuclear localization signal in Sam68

Landmarks in the development of treatment of retinal detachment include the recognition of the significance of retinal breaks that resulted in the distinction between rhegmatogenous retinal detachment (RRD) and exudative retinal detachment, the development of indirect ophthalmoscopy and scleral depression that allow better visualization of the peripheral area of the retina and better identification of retinal breaks, the recognition of the need to seal all retinal breaks, and the realization that vitreous traction is the major underlying cause of retinal tears and RRD. Scleral buckling procedures combine retinopexy to provide a scar around retinal breaks to seal them and scleral indentation to neutralize vitreous traction; they provided the first effective treatment of RRD. As surgeons gained experience with scleral buckling, they became aware that some RRDs, particularly those with fixed folds and/or a funnel configuration, often could not be repaired using this approach. It was thought that excessive vitreous traction was at fault, and the condition was called "massive vitreous retraction."     

Syntheses and Electronic Behaviors of Networked Alternating Aluminum-organic Moiety Hybrid Copolymers

Hybrid copolymers with aluminum-organic moiety frameworks were successfully prepared by reacting aluminum tri-sec-butoxide with several organic diols. The compositions of the resulting copolymers were determined using IR spectroscopy, ICP, elemental analysis and CP/MASS ¹³C-NMR spectroscopy. The UV-VIS spectra of the copolymers were also obtained. ESR spectral examinations of the copolymers and ab-initio calculations of the copolymer models indicate that an electron transfer takes place from the organic moiety to the aluminum atom in the framework.     

Fabricating microgrooves with varied cross-sections by electrodischarge machining

A two-step electrodischarge machining method was proposed for fabricating microgrooves with varied cross-sections on hard materials. Firstly, tungsten tool electrodes were shaped by wire electrodischarge grinding, and then the resulting tool electrodes were used to electrodischarge machine microgrooves on stainless steel. Preliminary experimental results showed that, in the first step, a sharp tool electrode with surface roughness of 0.3 µmRa could be achieved, and the surface roughness of the resulting groove was 0.16 µmRa in the second step. Voltage strongly affects the machining speed. A high voltage (>70 V) was preferable for improving the material removal rate. However, significant tool wear took place when using a high condenser capacitance at high voltages. To suppress tool wear, a high voltage and a small capacitance should be used. As test pieces, microgrooves having rectangular, triangular, circular and semi-closed cross-sections were fabricated.