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101.
实验室的质量监督(上) 总被引:4,自引:0,他引:4
质量监督是实验室保持人员能力,进行自我完善,日常渐进的重要手段,是持续改进的重要组成部分,也是实验室管理工作的难点,本文给出质量监督的目的、对象、方法、记录等. 相似文献
102.
103.
Jean-Fran?ois Blais Nathalie Meunier Guy Mercier Patrick Drogui Rajeshwar Dayal Tyagi 《Canadian Metallurgical Quarterly》2004,130(5):516-525
This research is related to a preindustrial pilot scale study of the performance of the simultaneous sewage sludge digestion and metal leaching (SSDML) process for decontamination and stabilization of sewage sludge. Ten batch tests were carried out in two 4?m3 bioreactors under various conditions of operation. Results indicated that the addition of 1.0 to 1.5?g?S0/L, which is the equivalent of approximately 30 to 50?kg?S0 per tons dry sludge, is sufficient to obtain conditions of acidity (pH<2.5) and oxido-reduction potential greater than 500 mV necessary for an effective solubilization of toxic metals. The final average of metal solubilization in the output sludge during the SSDML process varied in the following ranges: 25–78% Cd, 9–32% Cr, 48–100% Cu, 77–99% Mn, 15–53% Ni, 12–47% Pb, and 66–100% Zn. The N, P, and K contents were also preserved in the decontaminated sludge. Moreover, the use of low concentrations of elemental sulfur makes it possible to obtain decontaminated sludge with a low total sulfur content (1.4–1.5% S) compatible with agricultural use. The suspended solids removal calculated for the SSDML process was slightly lower, (2.5±0.4)% volatile suspended solids per day, than those reached using standard aerobic digestion. Finally, the SSDML process was found to be effective in removing bad odors and in the destruction (99–100%) of indicator bacteria. 相似文献
104.
Szu-Wei Huang Jenn-Gwo Hwu 《Electron Devices, IEEE Transactions on》2003,50(7):1658-1664
A cost-effective technique was introduced to prepare ultrathin aluminum oxide (Al/sub 2/O/sub 3/) gate dielectrics with equivalent oxide thickness (EOT) down to 14 /spl Aring/. Al/sub 2/O/sub 3/ was fabricated by anodic oxidation (anodization) of ultrathin Al films at room temperature in deionized water and then furnace annealed at 650/spl deg/C in N/sub 2/ ambient. Both dc and dac (dc superimposed with ac) anodization techniques were investigated. Effective dielectric constant of k/spl sim/7.5 and leakage current of 2-3 orders of magnitude lower than SiO/sub 2/ are observed. The conduction mechanism in Al/sub 2/O/sub 3/ gate stack is shown to be Fowler-Nordheim (F-N) tunneling. Saturated current behavior in the inversion region of MOS capacitor is observed. It is found that the saturation current is sensitive to interface state capacitance and can be used as an efficient way to evaluate the Al/sub 2/O/sub 3/ gate stack/Si-substrate interfacial property. An optimal process control for preparing Al/sub 2/O/sub 3/ gate dielectrics with minimized interface state capacitance via monitoring the inversion saturation current is demonstrated. 相似文献
105.
106.
Branislav Radjenovi? Jae Koo Lee Marija Radmilovi?-Radjenovi? 《Computer Physics Communications》2006,174(2):127-132
Level set method [S. Osher, J. Sethian, J. Comput. Phys. 79 (1988) 12] is a highly robust and accurate computational technique for tracking moving interfaces in various application domains. It originates from the idea to view the moving front as a particular level set of a higher dimensional function, so the topological merging and breaking, sharp gradients and cusps can form naturally, and the effects of curvature can be easily incorporated. The resulting equations, describing interface surface evolution, are of Hamilton-Jacobi type and they are solved using techniques developed for hyperbolic equations. In this paper we describe an extension of the sparse field method for solving level set equations in the case of non-convex Hamiltonians, which are common in the simulations of the profile surface evolution during plasma etching and deposition processes. Sparse field method itself, developed by Whitaker [R. Whitaker, Internat. J. Comput. Vision 29 (3) (1998) 203] and broadly used in image processing community, is an alternative to the usual combination of narrow band and fast marching procedures for the computationally effective solving of level set equations. The developed procedure is applied to the simulations of 3D feature profile surface evolution during plasma etching process, that include the effects of ion enhanced chemical etching and physical sputtering, which are the primary causes of the Hamiltonian non-convexity. 相似文献
107.
On the effect of spatial variances in historical rainfall time series to CSO performance evaluation.
Historical, high-resolution rain series are the backbone of modern combined sewer overflow (CSO) structure design. These rain series are the input to the computational estimation of the performance of the measures with respect to CSO pollution abatement. However, those historical precipitation measurements are available at only a few locations. Frequently rain series have to be used from gauging stations at a significant distance. In order to judge and to compensate for this influence an estimate between rain characteristics and combined sewer outflow (CSO) performance indicators would be useful. In this paper such correlations have been sought for a collection of 37 rain series covering large areas of Europe. It was found that the mean annual rain volume can explain most of the variances for the performance indicators Number of overflows and CSO volume. For explaining the spatial differences in the efficiency of the CSO structure another rain characteristic, i.e. the maximum event with a return period of one year, is to be used. 相似文献
108.
分析了设备对PCB电镀过程中孔中镀液更新之影响,为有效地利用设备条件改善孔中镀液的更新提供了一些方法及理论数据。 相似文献
109.
本文将空间结构变化的要求与动态资料确定的储量共同作为约束,建立了包含两个约束条件的目标函数, 应用模拟退火算法对孔隙率的空间分布进行预测。在实现过程中,通过初始控制参数的给定及目标函数修改提高了运算效率。由于目标函数有效地整合了静、动态信息,从而降低了模拟结果的不确定性.提高了模拟的精度。合成数据及实际数据的模拟试验表明,整合区域特性约束不仅提高了孔隙率模拟精度,而且算法收敛快、稳定性高。 相似文献
110.