Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

Mixing Center of a Channel

For longitudinally uniform stretches of waterways there is a mixing center for the across-channel location of a steady point source in steady flow, such that complete mixing is achieved as soon as possible and there is no concentration overshoot at either of the two shorelines. A mathematical definition of the mixing center is the zero of the first oscillatory cross-channel diffusion mode. With the shorelines plus four interior data points across the channel, the starting estimate for the mixing center suffices to keep peak shoreline concentrations to within 6% of optimal. For comparison, a source at mid flow gives 18% shoreline concentration overshoot in the test case. Should very high precision be required, the Appendix gives an iterative construction that converges to the first oscillatory diffusion mode.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Sustainable building: Building green

In addition to having one of the top environmental law programs in the United States, the University of Denver College of Law now has a building that demonstrates the institution ‘practices what it preaches’ when it comes to concern for the environment. Built on the front range of the Colorado Rocky Mountains, the 181,000 square foot, $63 million facility which opened in August will be the first certified “green” law school in the country. Don C. Smith, U.S. Correspondent explains the attributes that distinguish the building from conventional ones.     

Breaking the Nyquist barrier

The author discusses the concept that data sampled beyond the Nyquist frequency is meaningless. A simple signal processing scheme to extend resolution to nearly twice the Nyquist without the problem of alias emerged. It starts by placing one-dimensional signals into a simulated sample-and-hold process in a Mathcad application     

The Study of Heterogeneous Catalysts by High-Resolution Transmission Electron MicroscoDV

Advances in instrumentation have made it possible in recent years to study the microstructure of inorganic materials at atomic resolution using the technique of high-resolution electron microscopy (HREM). Details of instrumentation have been described elsewhere [l], and applications and trends for HREM have recently been reviewed [2]. Although HREM is primarily a technique for studying bulk defects, it is increasingly also being applied in the profile-imaging mode to derive information about surfaces [3]. The high spatial resolution of the electron microscope makes it a valuable tool for the characterization of heterogeneous catalysts. This is evidenced by the growing number of studies wherein electron micrographs are being used to describe the morphology of a particular catalyst. Profile imaging is proving particularly useful in this regard for following changes in surface structure as a function of treatment conditions [4].     

Effects of viscosity on the bitterness and astringency of grape seed tannin

To examine the separate effects of viscosity and sweetness on astringency, aqueous solutions of grape seed tannin (GST) were thickened with carboxymethyl cellulose (CMC) from 2 to 45 cP (experiment 1) or sweetened with 0 to 1.8 g/L aspartame (experiment 2). Trained subjects continuously rated astringency and bitterness in duplicate. Subjects were categorized by the salivary flow induced by citric acid and ability to taste n-propyl thiouracil (PROP). In experiment 1, maximum intensity and total duration of astringency were significantly decreased as viscosity rose, although time to maximum intensity of astringency was not affected. Maximum intensity and total duration of bitterness were not significantly affected by increasing viscosity; however, the onset of bitterness was significantly delayed. In experiment 2, increasing sweetness had no affect on any astringency parameter, although maximum intensity of bitterness was significantly decreased. Neither PROP nor salivary flow-status had any effect on perception of bitterness or astringency in either experiment.     

Control-canonical-form method applied to generating systems to improve dynamic stability characteristics

Contents The control-canonical-form (CCF) method is introduced for the purpose of applying it to high-order state-space single-input single or multiple-output (SISO or SIMO) and multiple-input multiple-output (MIMO) linear time-invariant system models to determine closed-loop systems (i.e. design robust controllers) from which enchanced dynamic stability characteristics and overall performance of these systems is achieved. The method has been applied successfully to a SISO 6th-order linearized state-space open-loop model (representing a simplified hydro power system), and to a MIMO 8th-order linearized state-space open-loop model (representing an 87.5 kVA synchronous machine with conventional exciter supplying power to an electric utility system through an interconnection network)

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Anwendung der kanonischen Form der Zustandsrückführung auf Erzeugersysteme zur Verbesserung der dynamischen Stabilitätseigenschaften

Übersicht Die Methode der kanonischen Form wird auf lineare zeitinvariante Systeme höherer Ordnung im Zustandsraum angewendet, die eine oder mehrere Eingangsgrößen bei einer oder mehreren Ausgangsgrößen aufweisen. Damit werden robuste Regler entworfen, welche die dynamische Stabilität und das gesamte Betriebsverhalten verbessern. Die Methode wurde erfolgreich auf ein linearisiertes Modell sechster Ordnung mit einem Eingang und einem Ausgang angewendet, das vereinfachend eine Wasserkraftanlage darstellt; außerdem auf ein linearisiertes Zustandsmodell achter Ordnung einer Synchronmaschine 87,5kVA mit konventioneller Erregung, die über ein Verbindungsnetzwerk in das öffentliche Netz einspeist.