Peripheral nerve stimulation by time-varying magnetic fields

PURPOSE: A study was performed to assess the stimulation threshold for healthy adults using sinusoidally oscillating gradients. METHOD: One hundred thirteen healthy adults were examined in the study. ECG and physiological parameters were measured. All measurements were performed of both the head and the abdomen. The subjects were measured in the supine position with the region of interest positioned in the center of the gradient coils. The measurement was performed for three orthogonal, four oblique, and double oblique orientations. RESULTS: No volunteer reported painful, severe stimulation. The mean thresholds for peripheral stimulation in head and body measurement were similar: 85.5% of stimulation during examination of the head and 87.6% during measurements of the abdomen were reported when the y-gradient was used. CONCLUSION: The greatest frequency of reported stimulations occurs when the y-gradient is used. This was confirmed by the results and supports the hypothesis that orthogonal to the y-axis the body has its largest conductive loop, resulting in the strongest peripheral stimulation.     

Initial experiences with the MR "magnitude contrast angiography of the lower extremities

45 patients with occlusive peripheral vascular disease were examined by MR angiography in a retrospective study. A FISP 3D sequence was used by acquiring a rephased and a dephased data set. The individual slices were post-processed by using a maximum-intensity-projection algorithm. The MRA results of the popliteal and tibioperoneal arteries were compared to conventional or digital angiography. In comparing these techniques MR angiography cannot be accepted for pre- and postoperative staging of patients with occlusive peripheral vascular disease. In future new MRA techniques may be useful in postoperative staging of patients with peripheral vascular stenosis.     

Issues in nonlinear stochastic grey box identification

Grey box identification refers to the practice of identifying dynamical systems in model structures exploiting partial prior information. This contribution reviews a method for stochastic grey box identification and surveys experiences and lessons of applying it to a number of industrial processes. Issues to be addressed include advantages and costs of introducing stochastics into the model, the question of what contribution must be expected from the model designer as opposed to what can be formalized in computer algorithms, and an outlook on future plans to resolve present shortcomings.     

Evaluation of NDT methods for detection of prestressing steel damage at post-tensioned concrete structures

For an assessment of the risk potential of existing structures, where in the case of prestressing steel damage the load-bearing capacity could be significantly affected, non-destructive testing techniques which enable reliable evaluation of the condition of the prestressing steels are of utmost importance. During the demolition of a post-tensioned concrete bridge in Berlin where damage of prestressing wires due to hydrogen-induced stress corrosion cracking were found in former investigations, parts of the girders of the bridge superstructure could be taken out. After non-destructive investigations by means of two testing techniques based on magnetic leakage flux measurement and one technique based on electromagnetic resonance measurement, subsequent removal of the concrete cover up to the ducts, opening the ducts and evaluation of the prestressing steels allowed a verification of the results obtained by the NDT methods. From the results it can be concluded that areas with fractures of several wires can be detected by the two techniques based on magnetic leakage flux measurement.     

Profile-Based Linguistic Uniformity as a Generic Method for Comparing Language Varieties

In this text we present``profile-based linguistic uniformity', a methoddesigned to compare language varieties on thebasis of a wide range of potentiallyheterogeneous linguistic variables. In manyrespects a parallel can be drawn with currentmethods in dialectometry (for an overview, see,Nerbonne and Heeringa, 2001; Heeringa, Nerbonneand Kleiweg, 2002): in both casesdissimilarities between varieties on the basisof individual variables are summarized inglobal dissimilarities, and a series oflanguage varieties are subsequently clusteredor charted using multivariate techniques suchas cluster analysis or multidimensionalscaling. This global similarity between themethods makes it possible to compare them andto investigate the implications of notabledifferences. In this text we specifically focuson, and defend one characteristic of ourmethodology, its profile-based nature.     

Tunneling through Thin Oxides—New Insights from Microscopic Calculations

In this paper, we summarize our recent efforts to analyze transmission probabilities of extremely thin SiO₂ gate oxides using microscopic models of Si[100]-SiO₂-Si[100] heterojunctions. We predict energy-dependent tunneling masses and their influence on transmission coefficients, discuss tunneling probabilities and analyze effects arising from the violation of parallel momentum conservation. As an application of the present method, gate currents in short bulk MOSFETs are calculated, including elastic defect-assisted contributions.     

Effect of bipolar turn-on on the static current-voltagecharacteristics of scaled vertical power DMOSFET's

The parasitic bipolar transistor inherent in the power vertical Double Diffused MOSFET (DMOSFET) structure can have a significant impact on its performance and reliability. Selectively formed TiSi₂ films on source contacts were used to reduce the contact resistance to n ⁺ source diffusion. These devices exhibit “kinks” in the output I-V characteristics. High contact resistance of TiSi₂ to moderately doped p-body diffusion causes high output conductance. Detailed two-dimensional numerical simulations are used to investigate the effect of the parasitic bipolar transistor on the static characteristics of scaled silicided DMOSFET's. The high contact resistance of TiSi₂-p-body interface leads to a floating potential and causes significant reduction in the MOS gate threshold voltage and results in a premature bipolar turn-on. It is shown that the parasitic bipolar turn-on places an important constraint on the scalability of the device into the submicron regime. A novel self-aligned DMOSFET structure with a shallow diffused p⁺ region is shown to eliminate this effect. Numerical simulations are shown to be in excellent agreement with the measured data at various temperatures