Free-Space Optical Communications for Next-generation Military Networks

There is a continuing need for increased capacity for military applications, especially in network-centric operational concepts that promote the use of information as fundamental for gaining superiority on the battlefield. As an example, the access to, and distribution of, sensor data is a major tenet of network-centric warfare and yet radio frequency (RF) links will struggle to provide the needed capacity. Free-space optical communications (FSOC) has the potential to meet these emerging military needs by offering dramatic increases in capacity. However, there are many technical challenges al multiple layers of the communications protocol stack. This article describes these challenges and discusses some mitigation approaches to provide a path to realizing this capability on the battlefield     

Synergistic Use of Pyridine and Selenophene in a Diketopyrrolopyrrole‐Based Conjugated Polymer Enhances the Electron Mobility in Organic Transistors

To achieve semiconducting materials with high electron mobility in organic field‐effect transistors (OFETs), low‐lying energy levels (the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO)) and favorable molecular packing and ordering are two crucial factors. Here, it is reported that the incorporation of pyridine and selenophene into the backbone of a diketopyrrolopyrrole (DPP)‐based copolymer produces a high‐electron‐mobility semiconductor, PDPPy‐Se. Compared with analogous polymers based on other DPP derivatives and selenophene, PDPPy‐Se features a lower LUMO that can decrease the electron transfer barrier for more effective electron injection, and simultaneously a lower HOMO that, however, can increase the hole transfer barrier to suppress the hole injection. Combined with thermal annealing at 240 °C for thin film morphology optimization to achieve large‐scale crystallite domains with tight molecular packing for effective charge transport along the conducting channel, OFET devices fabricated with PDPPy‐Se exhibit an n‐type‐dominant performance with an electron mobility (μ_e) as high as 2.22 cm² V^?1 s^?1 and a hole/electron mobility ratio (μ_h/μ_e) of 0.26. Overall, this study demonstrates a simple yet effective approach to boost the electron mobility in organic transistors by synergistic use of pyridine and selenophene in the backbone of a DPP‐based copolymer.     

Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy

The energy band alignments of Ni/Al₂O₃/GaN heterostructures have been explored by internal photoemission (IPE) and capacitance–voltage (CV) measurements. By performing IPE measurements at both reverse- and forward-bias conditions, the Ni/Al₂O₃ Schottky barrier is found to be 2.9 ± 0.1 eV with the presence of a strong image force lowering effect, while the Al₂O₃/GaN conduction-band offset is determined to be 2.2 ± 0.1 eV and is insensitive to oxide electrical field. CV-based flat-band voltage analysis has further been performed on samples with different oxide thicknesses, not only confirming the IPE-measured band alignment but also revealing the presence of 3.0 × 10¹² cm^-2 net positive charge at the Al₂O₃/GaN interface.     

Reconciling Economic and Non-Economic Perspectives on Media Policy: Transcending the "Marketplace of Ideas"

A long-standing division in positions on media policy reflects differences in faith regarding the efficacy of market versus government processes for achieving important communications policy objectives. The debate over content diversity between the advocates of market solutions and those who are critical of them reveals that the standard arguments of both camps rest on differences in assumptions that have not been subjected to careful analysis. Furthermore, analysts in each camp have failed to acknowledge or incorporate into their own analyses the other camp's legitimate insights. The result is a flawed policy dialogue that shows no signs of iterating toward a consensus or of making much progress toward an improved understanding of the requirements for effective communications policy. This failure reflects, in part, limitations in the constructs implied by the "marketplace of ideas" metaphor that has guided much of the thinking by both camps and the ways these constructs have been employed. New metaphors are needed to guide an expanded research agenda designed to assist in the development of more effective communications policy.     

铝－锂合金中δ’（Al＿3Li）沉淀相时效粗化行为及体积分数的测定

对经固溶处理的二种Ａｌ－Ｌｉ合金（１．９４ｗｔ．％Ｌｉ和２．７５ｗｔ．％Ｌｉ）的时效过程进行了研究。结果表明：δ’的生长速率遵从Ｏｓｔｗａｒｄ粗化动力学。１．９４ｗｔ．％Ｌｉ合金δ’产生于时效过程中，而２．７５ｗｔ．％Ｌｉ合金的δ’产生于时效的前期阶段。前者的表现体积分数明显大于根据相图估算的数伍，真实体积分数则与此值接近；后者的体积分数低于根据相图估算的数值，这可能归咎于δ’固相线的位置、统计学误差及Ｌｉ更易在时效过程中贫化。     

Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth

The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth of III–V on Si multijunction solar cell structures via metal‐organic chemical vapor deposition (MOCVD) has been analyzed. In particular, the impact on Si lifetime resulting from the four distinct phases within the overall MOCVD‐based III–V/Si growth process were studied: (1) the Si homoepitaxial emitter/cap layer; (2) GaP heteroepitaxial nucleation; (3) bulk GaP film growth; and (4) thick GaAs_yP_1‐y compositionally graded metamorphic buffer growth. During Phase 1 (Si homoepitaxy), an approximately two order of magnitude reduction in the Si minority carrier lifetime was observed, from about 450 to ≤1 µs. However, following the GaP nucleation (Phase 2) and thicker film (Phase 3) growths, the lifetime was found to increase by about an order of magnitude. The thick GaAs_yP_1‐y graded buffer was then found to provide further recovery back to around the initial starting value. The most likely general mechanism behind the observed lifetime evolution is as follows: lifetime degradation during Si homoepitaxy because of the formation of thermally induced defects within the Si bulk, with subsequent lifetime recovery due to passivation by fast‐diffusing atomic hydrogen coming from precursor pyrolysis, especially the group‐V hydrides (PH₃, AsH₃), during the III–V growth. These results indicate that the MOCVD growth methodology used to create these target III–V/Si solar cell structures has a substantial and dynamic impact on the minority carrier lifetime within the Si substrate. Copyright © 2015 John Wiley & Sons, Ltd.     

Polyphenylene Dendrimer‐Templated In Situ Construction of Inorganic–Organic Hybrid Rice‐Shaped Architectures

A novel dendrimer‐templating method for the synthesis of CuO nanoparticles and the in situ construction of ordered inorganic–organic CuO–G2Td(COOH)₁₆rice‐shaped architectures (RSAs) with analogous monocrystalline structures are reported. The primary CuO nanoparticles are linked by the G2Td(COOH)₁₆ dendrimer. This method provides a way to preserve the original properties of primary CuO nanoparticles in the ordered hybrid nanomaterials by using the 3D rigid polyphenylene dendrimer (G2Td(COOH)₁₆) as a space isolation. The primary CuO nanoparticles with diameter of (6.3 ± 0.4) nm are synthesized via four successive reaction steps starting from the rapid reduction of Cu(NO₃)₂ by using NaBH₄ as reducer and G2Td(COOH)₁₆ as surfactant. The obtained hybrid CuO–G2Td(COOH)₁₆ RSA, formed in the last reaction step, possesses a crystal structure analogous to a monocrystal as observed by transmission electron microscopy(TEM). In particular, the formation process of the RSA is monitored by UV–vis, TEM, and X‐ray diffraction. Small angle X‐ray scattering and Fourier transform infrared spectroscopy are used to investigate the role of the dendrimer in the RSA formation process. The obtained results illuminate that Cu²⁺? COO^? coordination bonds play an indispensable role in bridging and dispersing the primary CuO nanoparticles to induce and maintain the hybrid RSA. More importantly, the RSA is retained through the Cu²⁺? COO^?coordination bonds even with HCl treatment, suggesting that the dendrimers and Cu²⁺ ions may form rice‐shaped polymeric complexes which could template the assembly of CuO nanoparticles towards RSAs. This study highlights the feasibility and flexibility of employing the peculiar dendrimers to in‐situ build up hybrid architectures which could further serve as templates, containers or nanoreactors for the synthesis of other nanomaterials.     

A Jitter Injection Signal Generation and Extraction System for Embedded Test of High-Speed Data I/O

An instrument for on-chip measurement of transceiver transmission capability is described that is fully realizable in CMOS technology and embeddable within an SoC. The instrument can be used to inject and extract the timing and voltage information associated with signals in high-speed transceiver circuits that are commonly found in data communication applications. At the core of this work is the use of ΣΔ amplitude- and phase-encoding techniques to generate both the voltage and timing (phase) references, or strobes used for high-speed sampling. The same technique is also used for generating the test stimulant for the device-under-test.     

Theoretical and numerical investigation of flow stability in porous materials applied as volumetric solar receivers

This article reports results of a theoretical analysis as well as a numerical study investigating the occurrence of flow instabilities in porous materials applied as volumetric solar receivers. After a short introduction into the technology of volumetric solar receivers, which are aimed to supply heat for a steam turbine process to generate electricity, the general requirements of materials applied as solar volumetric receivers are reviewed. Finally, the main methods and results of the two studies are reported. In the theoretical analysis it is shown that heat conductivity as well as permeability properties of the porous materials have significant influence on the probability of the occurrence of flow instabilities. The numerical study has been performed to investigate the occurrence of unstable flow in heated ceramic foam materials. In the simulations a constant heat flow of radiation, that is absorbed in a defined volume, and constant permeability coefficients are assumed. Boundary conditions similar to those of the 10 MW Solucar Solar project have been chosen. In a three dimensional, heterogeneous two phase heat transfer model it was possible to simulate local overheating of the porous structure. The parameters heat conductivity, turbulent permeability coefficient and radial dispersion coefficient have been varied systematically. Consequently, for a heat flux density of 1 MW/m² a parameter chart could be generated, showing the possible occurrence of “unstable” or “stable” thermal and fluid mechanical behaviour. These numerical results are beneficial for the design of optimized materials for volumetric receivers.     

Definition of the Geometric Area of a Microelectrode Tip by Plasma Etching of Parylene

The geometric area of the tip of an intracortical stimulation electrode can be defined by combining photoresist masking with oxygen plasma etching of Parylene.1 The method was tested with both capacitor and iridium oxide electrodes and caused no significant degradation of the electrical properties of the electrode.