广义杠杆规则及其在配方计算中的应用

作者将相图中的一维杠杆规则推广至多元配料系统而成为广义杠杆规则，并利用这一规则对配方计算中解的可行域问题进行了深入的讨论，给出了几何解释及工艺诠释，对配方设计有一定的指导作用。     

NH_4Cl水溶液在成膜过程中的致孔作用

本文以ＮＨ４Ｃｌ饱和水溶液做添加剂，对ＰＶＤＦ／ＮＭＰ体系在成膜过程中的致孔作用做了研究。铸膜液中随ＮＨ４Ｃｌ水溶液加入量的改变，膜孔径也发生变化，并出现最大值。通过Ｘ－射线衍射扫描发现制膜液中存在无机盐时膜中无定形态结构增加，表明无机盐的加入有助于膜孔形成     

广播发射集散控制系统

本文介绍了广播发射台利用计算机技术、网络技术、遥控遥测技术、现代测试手段，对设备进行自动化控制与管理；实现设备技术指标自动测试，发射台无人值班、有人留守，建立机器的计算机档案制度，确保安全优质播出的方法和经验。     

微波单片集成电路的成品率优化

采用建立管芯等效电路模型、灵敏度分析以及统计勘探法对微波单片集成电路进行成品率优化，并编制了软件，加入到ＧａＡｓＩＣＣＡＤ系统中。应用该软件对Ｘ波段低噪声ＭＭＩＣ、超宽带ＭＭＩＣ放大器进行了设计，成品率有较大的提高，电路性能有所改善。     

中国的三种非同步轨道卫星移动通信系统星座方案

本文介绍基于我国的三种非同步轨道卫星移动通信系统星座方案：低、中轨系统各有２４和１８颗星，轨道高度分别为１３２６和８０３５ｋｍ，两系统各以５°和３０°的仰角对我国的覆盖率为９９．７８％和９９．９６％；椭圆轨道系统１２颗星，近、远地点分别为４２７和２９０６ｋｍ，以７°和１５°仰角对我国北纬２０°以上地区覆盖率分别为９７．９０％和８９．６１％，若增加４颗中轨卫星，以１５°仰角对我国的覆盖率为９９．９９％。     

Towards a generalized TLM algorithm for solving arbitraryreciprocal and nonreciprocal planar structures

A generalized transmission line matrix (TLM) algorithm is developed in the frequency domain to tackle arbitrary both reciprocal and nonreciprocal anisotropic waveguiding problems. In particular, the modeling issue for arbitrary planar structures is stressed in this work. A new three-dimensional (3-D) condensed node is used to consider the effect of both electric and magnetic constitutive tensors. Various results indicate how the modal dispersive behavior can be manipulated by changing not only the anisotropic characteristics of the substrate, but also the strip/slot geometry as well as the magnitude and orientation of the applied static magnetic field. The present algorithm is useful for CAD and simulation of a large class of gyrotropic waveguide-based microwave and millimeter-wave circuits     

西北地区节水灌溉市场与技术需求

西部开发需要大量的生态用水，从节水灌溉设备市场分析，节水灌溉专用泵阀、新型输水管材、高效低能喷微灌设备及材料的需求量很大，技术需求与亟待研究开发的关键技术和设备也很多。从西北地区水资源状况与需求看，节水灌溉市场有很大潜力。     

单模光纤最小群速度色散波长附近的调制不稳定性

利用修正的非线性Ｓｃｈｒｏｄｉｎｇｅｒ方程研究了单模光纤最小群速度色散波长附近的调制不稳定性，发现了一个新的由光纤四色散导致的调制不稳定性区域，该区域的调制范围与初始入射脉冲的功率和四阶色散有关。     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range