Tunable 3D Nanoresonators for Gas‐Sensing Applications

The detection of gas species with high sensitivity is a significant task for fundamental sciences as well as for industrial applications. Similarly, the ongoing trend for device miniaturization brings new challenges for advanced fabrication including on‐demand functionality tuning. Following this motivation, here the additive, direct‐write fabrication of freestanding 3D nanoarchitectures is introduced, which can be brought into mechanical resonance via electric AC fields. Specifically, this study focuses on the 3D nanostructure synthesis, the subsequent determination of Young's modulus, and demonstrates a postgrowth procedure, which can precisely tune the material modulus. As‐fabricated resonators reveal a Young's modulus of 9–13 GPa, which can be increased by a factor greater than 5. Next, the electric readout of the resonance behavior is demonstrated via electric current measurement as an essential element for the resonance sensor applications. Finally, the implications of gas‐physisorption and gas‐chemisorption on the resonance frequencies are studied, representing a proof‐of‐principle for sensing applications by the here presented approach.     

Design of Scannable Non‐uniform Planar Array Structure for Maximum Side‐Lobe Reduction

In this letter, we propose a novel design scheme for an optimal non‐uniform planar array geometry in view of maximum side‐lobe reduction. This is implemented by a thinned array using a genetic algorithm. We show that the proposed method can maintain a low side‐lobe level without pattern distortion during beam steering.     

An Analog Front‐End Circuit for ISO/IEC 14443‐Compatible RFID Interrogators

An analog front‐end circuit for ISO/IEC 14443‐compatible radio frequency identification (RFID) interrogators was designed and fabricated by using a 0.25 µm double‐poly CMOS process. The fabricated chip was operated using a 3.3 Volt single‐voltage supply. The results of this work could be provided as reusable IPs in the form of hard or firm IPs for designing single‐chip ISO/IEC 14443‐compatible RFID interrogators.     

A Linear Power Amplifier Design Using an Analog Feedforward Method

We propose and describe the fabrication of a linear power amplifier (LPA) using a new analog feedforward method for the IMT‐2000 frequency band (2,110–2,170 MHz). The proposed analog feedforward circuit, which operates without a pilot tone or a microprocessor, is a small and simple structure. When the output power of the fabricated LPA is about 44 dBm for a two‐tone input signal in the IMT‐2000 frequency band, the magnitude of the intermodulation signals is below ?60 dBc and the power efficiency is about 7%. In comparison to the fabricated main amplifier, the magnitude of the third intermodulation signal decreases over 24 dB in the IMT‐2000 frequency band.     

An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets

We demonstrate a new linearized monolithic microwave integrated circuit smart power amplifier of extraordinary high power-added efficiency (PAE), especially at the most probable transmission power of wide-band code-division multiple-access handsets. A PAE of 21% at 16 dBm of output power, which is the maximum bound of the most probable transmission power in IS-95 systems, was obtained, as well as 40% at 28 dBm, the required maximum output power, with a single-chip MMIC power amplifier. The power amplifier has been devised with two InGaP-GaAs heterojunction bipolar transistor amplifying chains parallel connected, each chain being optimized for a different P/sub 1dB/ (1-dB compression point) value: one for 16 dBm for the low-power mode, targeting the most probable transmission power, and the other for 28 dBm for the high-power mode. The high-power mode operation shows 40% of PAE and -30 dBc of adjacent channel leakage power ratio (ACLR) at the maximum output power of 28 dBm. The low-power mode operation exhibits -34 dBc of ACLR at 16 dBm with 14 mA of a quiescent current. This amplifier improves power usage efficiency and, consequently, the battery lifetime of the handset by a factor of three.     

Biodegradable Thin Metal Foils and Spin‐On Glass Materials for Transient Electronics

Biodegradable substrates and encapsulating materials play critical roles in the development of an emerging class of semiconductor technology, generally referred as “transient electronics”, whose key characteristic is an ability to dissolve completely, in a controlled manner, upon immersion in ground water or biofluids. The results presented here introduce the use of thin foils of Mo, Fe, W, or Zn as biodegradable substrates and silicate spin‐on‐glass (SOG) materials as insulating and encapsulating layers, with demonstrations of transient active (diode and transistor) and passive (capacitor and inductor) electronic components. Complete measurements of electrical characteristics demonstrate that the device performance can reach levels comparable to those possible with conventional, nontransient materials. Dissolution kinetics of the foils and cytotoxicity tests of the SOG yield information relevant to use in transient electronics for temporary biomedical implants, resorbable environmental monitors, and reduced waste consumer electronics.     

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand

Electronics that are capable of destroying themselves, on demand and in a harmless way, might provide the ultimate form of data security. This paper presents materials and device architectures for triggered destruction of conventional microelectronic systems by means of microfluidic chemical etching of the constituent materials, including silicon, silicon dioxide, and metals (e.g., aluminum). Demonstrations in an array of home‐built metal‐oxide‐semiconductor field‐effect transistors that exploit ultrathin sheets of monocrystalline silicon and in radio‐frequency identification devices illustrate the utility of the approaches.     

Miniaturized Flexible Electronic Systems with Wireless Power and Near‐Field Communication Capabilities

A class of thin, lightweight, flexible, near‐field communication (NFC) devices with ultraminiaturized format is introduced, and systematic investigations of the mechanics, radio frequency characteristics, and materials aspects associated with their optimized construction are presented. These systems allow advantages in mechanical strength, placement versatility, and minimized interfacial stresses compared to other NFC technologies and wearable electronics. Detailed experimental studies and theoretical modeling of the mechanical and electromagnetic properties of these systems establish understanding of the key design considerations. These concepts can apply to many other types of wireless communication systems including biosensors and electronic implants.