Generating Questions Based on Semi-Automated and End-to-End Neural Network

With the emergence of large-scale knowledge base, how to use triple information to generate natural questions is a key technology in question answering systems. The traditional way of generating questions require a lot of manual intervention and produce lots of noise. To solve these problems, we propose a joint model based on semi-automated model and End-to-End neural network to automatically generate questions. The semi-automated model can generate question templates and real questions combining the knowledge base and center graph. The End-to-End neural network directly sends the knowledge base and real questions to BiLSTM network. Meanwhile, the attention mechanism is utilized in the decoding layer, which makes the triples and generated questions more relevant. Finally, the experimental results on SimpleQuestions demonstrate the effectiveness of the proposed approach.     

A Preamble Re-utilizing Access Scheme for Machine-Type Communications with Optimal Access Class Barring

Wireless Personal Communications - The existing long term evolution networks originally designed for human-to-human communications are hard to tackle numerous and bursty random access requests from...     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.