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991.
N. A. Kochetov B. S. Seplyarskii S. G. Vadchenko 《International Journal of Self-Propagating High-Temperature Synthesis》2008,17(3):206-209
Combustion of bulk density Ti powder (containing 20 wt % TiN as a diluent) in a coflow of N2-Ar mixture was investigated upon variation in the nitrogen content of the gaseous mixture. The obtained data are believed
to open up new horizons for fabrication of layered and composite ceramics by infiltration-mediated combustion.
相似文献
992.
E. V. Golikova V. S. Grigor’ev V. I. Kuchuk T. S. Mashchenko L. P. Efimenko A. T. D’yachkova 《Glass Physics and Chemistry》2008,34(5):582-598
The aggregate stability of submicron and nanosized ZrO2 aqueous sols of different origins and different dispersities at pH 3–10 in the KCl concentration range 10?3–10?1 M is investigated by flow ultramicroscopy and photometry. The results obtained are analyzed in the framework of the extended Derjaguin-Landau-Verwey-Overbeek theory and the Muller-Martynov theory of reversible aggregation. The extension of boundary layers of water near the surface of the ZrO2 particles is estimated. 相似文献
993.
994.
995.
996.
997.
The X-ray scattering intensity curves for vitreous As2S3 are experimentally measured using soft (copper) and hard (molybdenum) X rays. The inclusion of all the specific features revealed in the experimental scattering intensity curves makes it possible to obtain the experimental atomic radial distribution function (ARDF) in the ordering range up to ~1 nm. The experimental ARDF is interpreted in the framework of the fragmentary model. A comparison of the experimental ARDF with the model ARDF calculated from the crystal structure data obtained for orpiment demonstrates that the corrugated layers inherent in crystalline As2S3 are retained in the glass structure but the characteristic interlayer interatomic distances are absent. The layers are joined together through the As4S5 molecular clusters. Microcrystals consisting of several unit cells are absent in the glass structure, which involves only the structural fragments of both crystalline analogs. One of the possible variants of their joining is proposed. 相似文献
998.
Programs are presented for calculating dusty air flow in ventilation systems, which have been derived from the method of singular
integral equations. They allow one to construct flow lines and determine the velocity pattern for the air in a closed rectangular
region with outlet, flow, and extraction holes; a study is made on the dust particle behavior in the aerodynamic field in
which there may be a rotating cylinder or pumping cylinder; determinations are made of the concentration and grain-size composition
of the dust in the extraction hole; one can construct flow lines and single-particle paths in multicoupled regions of potential
flows containing any number of rotating cylinders and cylinder pumps.
Translated from Novye Ogneupory, No. 5, pp. 53–58, May, 2008. 相似文献
999.
1000.
A technique is proposed for introducing microdoses (10?5–10?10 g) of germanium and indium metals into semiconductor compounds by coulometric titration in a solid electrolyte cell. The solid electrolytes that are reversible with respect to germanium cations (the GeSe-GeI2 system containing 5 mol % GeI2) and indium cations (the InCl3-MgCl2 system containing 15 mol % MgCl2, the InCl3-CdCl2 system containing 1.5 mol % CdCl2, and the In2S3-InCl3 system containing 5 mol % InCl3) are chosen, and their electric transport properties are characterized. The optimum conditions for electrochemical doping (temperature, current density), under which the current efficiency reaches 90–100%, are determined. The doping with germanium and indium is performed for nonstoichiometric compounds, such as lead monotelluride, indium sulfide, and ternary chalcogenide spinel Cd1 ± δCr2Se4. The doping efficiency is controlled by measuring the electromotive force of the corresponding electrochemical cells and the Hall effect, as well as using the electrical conductivity method. The solid electrolytes that are reversible with respect to indium are used to determine the standard Gibbs energies of formation of a number of indium-containing semiconductors. 相似文献