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61.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
62.
M. Benkerri R. Halimi A. Bouabellou N. Benouattas 《Materials Science in Semiconductor Processing》2004,7(4-6):319
In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×1014 or 5×1015 at. cm−2 doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu3Si and Cu4Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb+ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu4Si phase whereas the Cu3Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed. 相似文献
63.
Evaluation and optimization of package processing and design through solder joint profile prediction 总被引:1,自引:0,他引:1
Solder joints are generated using a variety of methods to provide both mechanical and electrical connection for applications such as flip-chip, wafer level packaging, fine pitch, ball-grid array, and chip scale packages. Solder joint shape prediction has been incorporated as a key tool to aid in process development, wafer level and package level design and development, assembly, and reliability enhancement. This work demonstrates the application of an analytical model and the Surface Evolver software in analyzing a variety of solder processing methods and package types. Bump and joint shape prediction was conducted for the design of wafer level bumping, flip-chip assembly, and wafer level packaging. The results from the prediction methodologies are validated with experimentally measured geometries at each level of design. 相似文献
64.
The electrical properties and microstructure of (Ba,Y)TiO3 PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content. 相似文献
65.
66.
The microstructure evolution in nonstoichiometric titanium carbide is studied during high-temperature deformation at high strain rates and low strains (shock compression) and at slow strain rates and high strains (superplastic regime). The results demonstrate that high-temperature deformation in a broad range of strain rates offers a means of controlling the microstructure of titanium carbide. By varying deformation conditions, one can obtain materials differing in microstructure and chemical composition, in particular, with equilibrium and nonequilibrium microstructures. Accordingly, the physicochemical properties of such materials also differ. 相似文献
67.
We consider the problem of designing a network of optical cross-connects (OXCs) to provide end-to-end lightpath services to large numbers of label switched routers (LSRs). We present a set of heuristic algorithms to address the combined problem of physical topology design (i.e., determine the number of OXCs required and the fiber links among them) and logical topology design (i.e., determine the routing and wavelength assignment for the lightpaths among the LSRs). Unlike previous studies which were limited to small topologies with a handful of nodes and a few tens of lightpaths, we have applied our algorithms to networks with hundreds or thousands of LSRs and with a number of lightpaths that is an order of magnitude larger than the number of LSRs. In order to characterize the performance of our algorithms, we have developed lower bounds which can be computed efficiently. We present numerical results for up to 1000 LSRs and for a wide range of system parameters such as the number of wavelengths per fiber, the number of transceivers per LSR, and the number of ports per OXC. The results indicate that it is possible to build large-scale optical networks with rich connectivity in a cost-effective manner, using relatively few but properly dimensioned OXCs. 相似文献
68.
A hybrid optical fibre amplifier is described that consists of a fluoride-based thulium-doped fibre amplifier and a silica-based erbium-doped fibre amplifier connected in a cascade. The amplifier has a gain of more than 25 dB and a noise figure of less than 9 dB over a wide wavelength region of 1458-1540 nm. 相似文献
69.
K. N. Subramanian J. G. Lee 《Journal of Materials Science: Materials in Electronics》2004,15(4):235-240
Properties of body centered tetragonal tin are highly anisotropic. As a consequence large stresses can develop at the tin grain boundaries due to coefficient of thermal expansion mismatch during temperature excursions. A modeling approach to evaluate the 3D stress states that develop at grain boundaries during thermomechanical fatigue in tin-based solder is presented. Development of significant amounts of stresses in the plane of the grain boundary can cause grain-boundary sliding and surface-relief effects, while those normal to the grain boundary can cause grain-boundary decohesion and cracking. 相似文献
70.
T. Choi J.‐H. Jang C.K. Ullal M.C. LeMieux V.V. Tsukruk E.L. Thomas 《Advanced functional materials》2006,16(10)
The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern. 相似文献