Thermal performance of a packed bed reactor for a high‐temperature chemical heat pump

The thermal performance of a chemical heat pump that uses the reaction system of calcium oxide/lead oxide/carbon dioxide, which is developed for utilization of high‐temperature heat above 800°C, is studied experimentally. The thermal performance of a packed‐bed reactor of a calcium oxide/carbon dioxide reaction system, which stores and transforms a high‐temperature heat source in the heat pump operation, is examined under various heat pump operation conditions. The energy analysis based on the experiment shows that it is possible to utilize high‐temperature heat with this heat pump. This heat pump can store heat above 850°C and then transform it into a heat above 900°C under an approximate atmospheric pressure. An applied system that combines the heat pump and a high‐temperature process is proposed for high‐efficiency heat utilization. The scale of the heat pump in the combined system is estimated from the experimental results. Copyright © 2001 John Wiley & Sons, Ltd.     

An XPS study of passive films on Nickel and alloy 600 in acids

Compositions of surface films formed on nickel and Alloy 600 in I M HCI, 0.5 M H₂SO₄ and I/3 M H₃PO₁ solutions were investigated as a function of polarization potential. The main constituent of surface films formed on Ni in 0.5 M H₂SO₄ or 1/3 M H₃PO₄ solution was hydrated nickel oxyhydroxide, in which the ratio of O₂ to OH⁻ increased when passivation occurred. The surface films formed on Ni and Alloy 600 at lower potentials in 0.5 M H₂SO₄ solution contain S² ions other than SOP_4²⁻ ions, whereas S²⁻ ions were not incorporated in the passive film. Passivation of Alloy 600 took place by the formation of hydrated chromium oxyhydroxide. Pitting led to no substantial change in the average composition of the film.     

Space-Code CS-CDMA Systems over MISO Frequency-Selective Rayleigh Fading Channels

We propose a transmit diversity CDMA scheme which is a combination of convolutional spreading (CS) and space-time spreading (STS) over multiple-input single-output (MISO) multipath Rayleigh fading channels. With our scheme, multiuser detection over an MISO multipath channel is transformed to single-user detection over a single-input single-output (SISO) multipath channel as the scheme by Petre et al. Because of its simple configuration, it is immediate to see that our scheme realizes full transmit- and path-diversity for two transmit antennas. We extend the system to four transmit antennas employing quasi-orthogonal construction and show a necessary and sufficient condition for full transmit- and path-diversity to be realized. The proposed scheme requires less hardware complexity and less latency than the one by Petre et al.     

Aging time dependence of catastrophic optical damage (COD) failureof a 0.98-μm GaInAs-GaInP strained quantum-well laser

In this paper, we studied the aging time dependence of the catastrophic optical damage (COD) failure of an Al-free uncoated 0.98-μm GaInAs-GaInP strained quantum-well laser with an injection current as a parameter. Based on the stress-strength model, we first investigated experimentally the dependence of the critical power level (CPL) at which COD would take place upon the aging time. Then applying a statistical treatment to this result, we found for the first time that CPL data at each aging time could be considered to distribute according to the Weibull statistics, and the decrease rate of the CPL with the aging time depended very strongly on the injection current. Finally, using the relationship between the decrease rate of the CPL with the aging time and the current, we predicted roughly the time of a COD failure occurrence for both large and small current cases. As a result, we clarified that for our Al-free uncoated 0.98-μm laser, a COD failure became a fatal problem in the case of a large-current (high-power) operation     

EXOS-D (AKEBONO) very low frequency plasma wave instruments (VLF)

The Akebono (EXOS-D) satellite has been successfully observing the Earth's magnetosphere since it was launched on February 21, 1989. The objectives of VLF instruments on board the satellite were to investigate the behavior of plasma waves associated with accelerated auroral particles, wave-particle interaction mechanisms, and propagation characteristics of whistler-mode waves in the magnetosphere. The instruments measured not only the dynamic spectra of VLF waves up to 15 kHz by a wideband receiver, but also their absolute field intensities, wave normal vectors, and Poynting vectors. Two electric and three magnetic components with a bandwidth of about 50 Hz up to 12.5 kHz are sent to measure the wave normal vectors and Poynting vectors. The antenna impedance is measured to determine the correct absolute electric field intensities. The instruments have successfully measured the wave spectra, the wave normal vectors. Poynting vectors, the precise wave intensities, the antenna impedance, etc. The present paper describes the unique features of the instruments, especially the Poynting flux analyzers in more detail. Obtained scientific results are also reviewed     

A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byteeffective program speed

Emerging application areas of mass storage flash memories require low cost, high density flash memories with enhanced device performance. This paper describes a 64 Mb NAND flash memory having improved read and program performances. A 40 MB/s read throughput is achieved by improving the page sensing time and employing the full-chip burst read capability. A 2-μs random access time is obtained by using a precharged capacitive decoupling sensing scheme with a staggered row decoder scheme. The full-chip burst read capability is realized by introducing a new array architecture. A narrow incremental step pulse programming scheme achieves a 5 MB/s program throughput corresponding to 180 ns/Byte effective program speed. The chip has been fabricated using a 0.4-μm single-metal CMOS process resulting in a die size of 120 mm² and an effective cell size of 1.1 μm²     

Explanation of impact load curve in ball impact test in relation to thermal aging

Solder joints are required to have high impact strength for use in portable electronic products. To make solder joints with high impact strength, qualitative evaluation methods of impact strength are required. Ball impact tests have been widely adopted in evaluating the impact strength of solder joints because of their easy implementation. Impact load curves obtained from ball impact tests are used as an evaluation indicator of impact strength of solder joint. However, a relation between fracture behavior and impact load curve has not yet been clarified, and an explanation of the impact load curve has not yet been provided in detail. In addition to this, detailed study about the relation between IMC layer thickness and impact strength has not been performed, although the IMC layer thickness formed at the interface would significantly affect the impact strength of the solder joint. This study aimed to explain the impact load curve in the ball impact test and to reveal the effect of the IMC layer thickness on the impact strength of the solder joint. Sn–3.0Ag–0.5Cu solder was reflowed on an electroless Ni–P plated Cu substrate (Ni–P), and a ball impact test was then carried out to evaluate the impact strength. This study found that the ball impact test is effective to evaluate the interfacial strength of solder joints. In the impact load curve, it is estimated that the solder bump keeps deforming until the interfacial crack initiates (maximum load), and the interfacial crack initiates after the maximum load and propagates along the interface between the solder and Ni–P. The suitable evaluation of impact strength became possible by measuring the correspondence relation between the deformation distance of the solder bump after fracture and the energy until maximum load and the relation between the area fraction of the residual solder on the fractured pad and the energy after maximum load. And, it is proved that the impact strength decreased with increasing aging time because the growth of the IMC layer remarkably degraded the interfacial strength of the solder joint.     

A 14-ns 14-Mb CMOS DRAM with 300-mW active power

A 4-Mb high-speed DRAM (HSDRAM) has been developed and fabricated by using 0.7-μm L_eff CMOS technology with PMOS arrays inside n-type wells and p-type substrate plate trench cells. The 13.18-mm×6.38-mm chip, organized as either 512 K word×8 b or 1 M word×4 b, achieves a nominal random-access time of 14 ns and a nominal column-access time of 7 ns, with a 3.6-V V_cc and provision of address multiplexing. The high level of performance is achieved by using a short-signal-path architecture with center bonding pads and a pulsed sensing scheme with a limited bit-line swing. A fast word-line boosting scheme and a two-stage word-line delay monitor provide fast word-line transition and detection. A new data output circuit, which interfaces a 3.6-V V_cc to a 5-V bus with an NMOS-only driver, also contributes to the fast access speed by means of a preconditioning scheme and boosting scheme. Limiting the bit-line voltage swing for bit-line sensing results in a low power dissipation of 300 mW for a 60-ns cycle time